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Source author record

C. Deranlot

C. Deranlot appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-con

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Published work

14 published item(s)

preprint2015arXiv

Evaluation of the spin diffusion length of AuW alloy by spin absorption experiments in the limit of large spin-orbit interactions

The knowledge of the spin diffusion length $λ_{A}$ is a prerequisite for the estimation of the spin Hall angle. We investigate spin current absorption of materials with small $λ_{A}$ using AuW stripes inserted in lateral spin-valves. Width variations of the AuW stripe lead to drastic changes of the spin absorption, which cannot be explained by conventional analysis. We show that the spin-current polarization and the spin accumulation attenuation in the vicinity of the spin absorber must to be precisely taken into account for accurate estimation of $λ_{A}$. We propose an analytical model supported by numerical calculations that allows to extract proper $λ_{A}$ values of spin Hall effect materials.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Experimental evidences of a large extrinsic spin Hall effect in AuW alloy

We report an experimental study of a gold-tungsten alloy (7% at. W concentration in Au host) displaying remarkable properties for spintronics applications using both magneto-transport in lateral spin valve devices and spin-pumping with inverse spin Hall effect experiments. A very large spin Hall angle of about 10% is consistently found using both techniques with the reliable spin diffusion length of 2 nm estimated by the spin sink experiments in the lateral spin valves. With its chemical stability, high resistivity and small induced damping, this AuW alloy may find applications in the nearest future.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

High-performance ferroelectric memory based on fully patterned tunnel junctions

In tunnel junctions with ferroelectric barriers, switching the polarization direction modifies the electrostatic potential profile and the associated average tunnel barrier height. This results in strong changes of the tunnel transmission and associated resistance. The information readout in ferroelectric tunnel junctions (FTJs) is thus resistive and non-destructive, which is an advantage compared to the case of conventional ferroelectric memories (FeRAMs). Initially, endurance limitation (i.e. fatigue) was the main factor hampering the industrialization of FeRAMs. Systematic investigations of switching dynamics for various ferroelectric and electrode materials have resolved this issue, with endurance now reaching $10^{14}$ cycles. Here we investigate data retention and endurance in fully patterned submicron Co/BiFeO$_3$/Ca$_{0.96}$Ce$_{0.04}$MnO$_3$ FTJs. We report good reproducibility with high resistance contrasts and extend the maximum reported endurance of FTJs by three orders of magnitude ($4\times10^6$ cycles). Our results indicate that here fatigue is not limited by a decrease of the polarization or an increase of the leakage but rather by domain wall pinning. We propose directions to access extreme and intermediate resistance states more reliably and further strengthen the potential of FTJs for non-volatile memory applications.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin Pumping and Inverse Spin Hall Effect in Platinum: The Essential Role of Spin-Memory Loss at Metallic Interfaces

Through combined ferromagnetic resonance, spin-pumping and inverse spin Hall effect experiments in Co|Pt bilayers and Co|Cu|Pt trilayers, we demonstrate consistent values of spin diffusion length $\ell_{\rm sf}^{\rm Pt}=3.4\pm0.4$ nm and of spin Hall angle $θ_{\rm SHE}^{\rm Pt}=0.051\pm0.004$ for Pt. Our data and model emphasize on the partial depolarization of the spin current at each interface due to spin-memory loss. Our model reconciles the previously published spin Hall angle values and explains the different scaling lengths for the ferromagnetic damping and the spin Hall effect induced voltage.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Inverse Spin Hall Effect in nanometer-thick YIG/Pt system

High quality nanometer-thick (20 nm, 7 nm and 4 nm) epitaxial YIG films have been grown on GGG substrates using pulsed laser deposition. The Gilbert damping coefficient for the 20 nm thick films is 2.3 x 10-4 which is the lowest value reported for sub-micrometric thick films. We demonstrate Inverse spin Hall effect (ISHE) detection of propagating spin waves using Pt. The amplitude and the lineshape of the ISHE voltage correlate well to the increase of the Gilbert damping when decreasing thickness of YIG. Spin Hall effect based loss-compensation experiments have been conducted but no change in the magnetization dynamics could be detected.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Monoatomic magnetic interfaces in IrMn/Cr/Co thin films probed by grazing incidence X-ray absorption spectroscopy

We present depth-resolved experimental results on the atomic and electronic structures of the Co-Cr interface on four IrMn/Cr/Co thin films with variable thickness of the Cr layer. Grazing incidence X-ray absorption near edge structure near the Cr K-edge was used, and an Angstrom resolved depth-profile for this layer was obtained. An interdiffusion between chromium and cobalt layers was observed in all films, being more pronounced for samples with thinner Cr layers, where Cr behaves as an amorphous material. This causes a contraction in coordination distances in Cr near the interface with Co. In this region, a change in the electronic structure of chromium's 3d orbitals is also observed, and it appears that Cr and Co form a covalent bond resulting in a CrCo alloy. Ab initio numerical simulations support such an interpretation of the obtained experimental results.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Giant Spin Hall Effect Induced by Skew Scattering from Bismuth Impurities inside Thin Film CuBi Alloys

We demonstrate that a giant spin Hall effect (SHE) can be induced by introducing a small amount of Bi impurities in Cu. Our analysis based on a new 3-dimensional finite element treatment of spin transport shows that the sign of the SHE induced by the Bi impurities is negative and its spin Hall (SH) angle amounts to -0.24. Such a negative large SH angle in CuBi alloys can be explained by applying the resonant scattering model proposed by Fert and Levy [Phys. Rev. Lett. 106, 157208 (2011)] to 6p impurities.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Anisotropic magneto-Coulomb effect versus spin accumulation in a ferromagnetic single-electron device

We investigate the magneto-transport characteristics of nanospintronics single-electron devices. The devices consist of single non-magnetic nano-objects (nanometer size nanoparticles of Al or Cu) connected to Co ferromagnetic leads. The comparison with simulations allows us attribute the observed magnetoresistance to either spin accumulation or anisotropic magneto-Coulomb effect (AMC), two effects with very different origins. The fact that the two effects are observed in similar samples demonstrates that a careful analysis of Coulomb blockade and magnetoresistance behaviors is necessary in order to discriminate them in magnetic single-electron devices. As a tool for further studies, we propose a simple way to determine if spin transport or AMC effect dominates from the Coulomb blockade I-V curves of the spintronics device.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Enhancement of the Spin Accumulation at the Interface Between a Spin-Polarized Tunnel Junction and a Semiconductor

We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $ΔV$ at the interface as high as 1.2mV for a current density of 0.34 nA.$μm^{-2}$. This represents a dramatic increase of the spin accumulation signal, well above the theoretical predictions for spin injection through a ferromagnet/semiconductor interface. Such an enhancement is consistent with a sequential tunneling process via localized states located in the vicinity of the Al$_2$O$_3$/GaAs interface. For spin-polarized carriers these states act as an accumulation layer where the spin lifetime is large. A model taking into account the spin lifetime and the escape tunneling time for carriers travelling back into the ferromagnetic contact reproduces accurately the experimental results.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Extrinsic Spin Hall Effect Induced by Iridium Impurities in Copper

We study the extrinsic spin Hall effect induced by Ir impurities in Cu by injecting a pure spin current into a CuIr wire from a lateral spin valve structure. While no spin Hall effect is observed without Ir impurity, the spin Hall resistivity of CuIr increases linearly with the impurity concentration. The spin Hall angle of CuIr, $(2.1 \pm 0.6)$% throughout the concentration range between 1% and 12%, is practically independent of temperature. These results represent a clear example of predominant skew scattering extrinsic contribution to the spin Hall effect in a nonmagnetic alloy.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Hysteretic magnetic pinning and reversible resistance switching in High-Tc superconductor/ferromagnet multilayers

We study a high-TC superconducting (YBa2Cu3O7-d) / ferromagnetic (Co/Pt multilayer) hybrid which exhibits resistance switching driven by the magnetic history: depending on the direction of the external field, a pronounced decrease or increase of the mixed-state resistance is observed as magnetization reversal occurs within the Co/Pt multilayer. We demonstrate that stray magnetic fields cause these effects via i) creation of vortices/antivortices and ii) magnetostatic pinning of vortices that are induced by the external field.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Zero-temperature spin-glass freezing in self-organized arrays of Co nanoparticles

We study, by means of magnetic susceptibility and magnetic aging experiments, the nature of the glassy magnetic dynamics in arrays of Co nanoparticles, self-organized in N layers from N=1 (two-dimensional limit) up to N=20 (three-dimensional limit). We find no qualitative differences between the magnetic responses measured in these two limits, in spite of the fact that no spin-glass phase is expected above T=0 in two dimensions. More specifically, all the phenomena (critical slowing down, flattening of the field-cooled magnetization below the blocking temperature and the magnetic memory induced by aging) that are usually associated with this phase look qualitatively the same for two-dimensional and three-dimensional arrays. The activated scaling law that is typical of systems undergoing a phase transition at zero temperature accounts well for the critical slowing down of the dc and ac susceptibilities of all samples. Our data show also that dynamical magnetic correlations achieved by aging a nanoparticle array below its superparamagnetic blocking temperature extend mainly to nearest neighbors. Our experiments suggest that the glassy magnetic dynamics of these nanoparticle arrays is associated with a zero-temperature spin-glass transition.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Dynamics of two coupled vortices in a spin valve nanopillar excited by spin transfer torque

We investigate the dynamics of two coupled vortices driven by spin transfer. We are able to independently control with current and perpendicular field, and to detect, the respective chiralities and polarities of the two vortices. For current densities above $J=5.7*10^7 A/cm^2$, a highly coherent signal (linewidth down to 46 kHz) can be observed, with a strong dependence on the relative polarities of the vortices. It demonstrates the interest of using coupled dynamics in order to increase the coherence of the microwave signal. Emissions exhibit a linear frequency evolution with perpendicular field, with coherence conserved even at zero magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Shaped angular dependence of the spin transfer torque and microwave generation without magnetic field

The generation of oscillations in the microwave frequency range is one of the most important applications expected from spintronics devices exploiting the spin transfer phenomenon. We report transport and microwave power measurements on specially designed nanopillars for which a non-standard angular dependence of the spin transfer torque (wavy variation) is predicted by theoretical models. We observe a new kind of current-induced dynamics that is characterized by large angle precessions in the absence of any applied field, as this is also predicted by simulation with such a wavy angular dependence of the torque. This type of non-standard nanopillars can represent an interesting way for the implementation of spin transfer oscillators since they are able to generate microwave oscillations without applied magnetic field. We also emphasize the theoretical implications of our results on the angular dependence of the torque.

0 citations0 reviewsNo code linkedOpen access