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A. Chin

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.str-el

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preprint2015arXiv

Charge transport in amorphous Hf$_{0.5}$Zr$_{0.5}$O$_2$

In this study, we demonstrated experimentally and theoretically that the charge transport mechanism in amorphous Hf$_{0.5}$Zr$_{0.5}$O$_2$ is phonon-assisted tunneling between traps like in HfO$_2$ and ZrO$_2$. The thermal trap energy of 1.25 eV and optical trap energy of 2.5 eV in Hf$_{0.5}$Zr$_{0.5}$O$_2$ were determined based on comparison of experimental data on transport with different theories of charge transfer in dielectrics. A hypothesis that oxygen vacancies are responsible for the charge transport in Hf$_{0.5}$Zr$_{0.5}$O$_2$ was discussed.

preprint2014arXiv

Origin of traps and charge transport mechanism in hafnia

In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO$_2$. Basing on the model of phonon-assisted tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics were achieved. The thermal trap energy of 1.25 eV in HfO$_2$ was determined based on the charge transport experiments.

preprint2014arXiv

Percolation conductivity in hafnium sub-oxides

In this study, we demonstrated experimentally that formation of chains and islands of oxygen vacancies in hafnium sub-oxides (HfO$_x$, $x<2$) leads to percolation charge transport in such dielectrics. Basing on the model of Éfros-Shklovskii percolation theory good quantitative agreement between the experimental and theoretical data of current-voltage characteristics were achieved. Based on the percolation theory suggested model shows that hafnium sub-oxides consist of mixtures of metallic Hf nanoscale clusters of 1-2 nm distributed onto non-stoichiometric HfO$_x$. It was shown that reported approach might describe low resistance state current-voltage characteristics of resistive memory elements based on HfO$_x$.

preprint2007arXiv

Quantum corrections to the Ising interactions in LiYHoF4

We systematically derive an effective two-state Hamiltonian for the dipolar Ising magnet LiYHoF4, including quantum corrections which arise from the transverse dipolar and hyperfine interactions. These corrections are derived using a generalised Schrieffer-Wolff transformation to leading order in the small parameters given by the ratio of the interaction energies to the energy of the first excited electronic state of the Holmium ions. The resulting low-energy Hamiltonian involves two-level systems, corresponding to the low-lying electronic states of the Holmiums, which are coupled to one another and to the Holmium nuclei. It differs from that obtained by treating the electronic states of the Holmium as a spin-1/2 with an anisotropic g-factor. It includes effective on-site transverse fields, and both pairwise and three-body interactions among the dipoles and nuclei. We explain the origins of the terms, and give numerical values for their strengths.