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D. R. Islamov

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.supr-con

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preprint2015arXiv

Charge transport in amorphous Hf $_{0.5}$ Zr $_{0.5}$ O $_2$

In this study, we demonstrated experimentally and theoretically that the charge transport mechanism in amorphous Hf $_{0.5}$ Zr $_{0.5}$ O $_2$ is phonon-assisted tunneling between traps like in HfO $_2$ and ZrO $_2$ . The thermal trap energy of 1.25 eV and optical trap energy of 2.5 eV in Hf $_{0.5}$ Zr $_{0.5}$ O $_2$ were determined based on comparison of experimental data on transport with different theories of charge transfer in dielectrics. A hypothesis that oxygen vacancies are responsible for the charge transport in Hf $_{0.5}$ Zr $_{0.5}$ O $_2$ was discussed.

preprint2014arXiv

Origin of traps and charge transport mechanism in hafnia

In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO $_2$ . Basing on the model of phonon-assisted tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics were achieved. The thermal trap energy of 1.25 eV in HfO $_2$ was determined based on the charge transport experiments.

preprint2014arXiv

Percolation conductivity in hafnium sub-oxides

In this study, we demonstrated experimentally that formation of chains and islands of oxygen vacancies in hafnium sub-oxides (HfO $_x$ , $x<2$ ) leads to percolation charge transport in such dielectrics. Basing on the model of Éfros-Shklovskii percolation theory good quantitative agreement between the experimental and theoretical data of current-voltage characteristics were achieved. Based on the percolation theory suggested model shows that hafnium sub-oxides consist of mixtures of metallic Hf nanoscale clusters of 1-2 nm distributed onto non-stoichiometric HfO $_x$ . It was shown that reported approach might describe low resistance state current-voltage characteristics of resistive memory elements based on HfO $_x$ .

preprint2002arXiv

Subgap anomaly and above-energy-gap structure in chains of diffusive SNS junctions

We present the results of low-temperature transport measurements on chains of superconductor--normal-constriction--superconductor (SNS) junctions fabricated on the basis of superconducting PtSi film. A comparative study of the properties of the chains, consisting of 3 and 20 SNS junctions in series, and single SNS junctions reveals essential distinctions in the behavior of the current-voltage characteristics of the systems: (i) the gradual decrease of the effective suppression voltage for the excess conductivity observed at zero bias as the quantity of the SNS junctions increases, (ii) a rich fine structure on the dependences dV/dI-V at dc bias voltages higher than the superconducting gap and corresponding to some multiples of 2Δ/e. A model to explain this above-energy-gap structure based on energy relaxation of electron via Cooper-pair-breaking in superconducting island connecting normal metal electrods is proposed.

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D. R. Islamov

Research overview

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4 publications

Charge transport in amorphous Hf $_{0.5}$ Zr $_{0.5}$ O $_2$

Origin of traps and charge transport mechanism in hafnia

Percolation conductivity in hafnium sub-oxides

Subgap anomaly and above-energy-gap structure in chains of diffusive SNS junctions

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D. R. Islamov

Research overview

Is this your work?

4 publications

Charge transport in amorphous Hf0.5_{0.5}0.5​Zr0.5_{0.5}0.5​O2_22​

Origin of traps and charge transport mechanism in hafnia

Percolation conductivity in hafnium sub-oxides

Subgap anomaly and above-energy-gap structure in chains of diffusive SNS junctions

See the researcher in context

Building this map preview

Charge transport in amorphous Hf $_{0.5}$ Zr $_{0.5}$ O $_2$