Abstract
In this study, we demonstrated experimentally and theoretically that the charge transport mechanism in amorphous HfZrO is phonon-assisted tunneling between traps like in HfO and ZrO. The thermal trap energy of 1.25 eV and optical trap energy of 2.5 eV in HfZrO were determined based on comparison of experimental data on transport with different theories of charge transfer in dielectrics. A hypothesis that oxygen vacancies are responsible for the charge transport in HfZrO was discussed.
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