Abstract
Cross-sectional scanning tunnelling microscopy and spectroscopy (XSTM/S) were used to map out the band alignment across the complex oxide interface of LaCaMnO/Nb-doped SrTiO. By a controlled cross-sectional fracturing procedure, unit-cell high steps persist near the interface between the thin film and the substrate in the non-cleavable perovskite materials. The abrupt changes of the mechanical and electronic properties were visualized directly by XSTM/S. Using changes in the DOS as probe by STM, the electronic band alignment across the heterointerface was mapped out providing a new approach to directly measure the electronic properties at complex oxide interfaces.
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