Paper detail

Universal set of quantum gates for the flip-flop qubit in the presence of 1/f noise

Impurities hosted in semiconducting solid matrices represent an extensively studied platform for quantum computing applications. In this scenario, the so-called flip-flop qubit emerges as a convenient choice for scalable implementations in silicon. Flip-flop qubits are realized implanting phosphorous donor in isotopically purified silicon, and encoding the logical states in the donor nuclear spin and in its bound electron. Electrically modulating the hyperfine interaction by applying a vertical electric field causes an Electron Dipole Spin Resonance (EDSR) transition between the states with antiparallel spins $\{|\downarrow\Uparrow\rangle,|\uparrow\Downarrow\rangle\}$, that are chosen as the logical states. When two qubits are considered, the dipole-dipole interaction is exploited allowing long-range coupling between them. A universal set of quantum gates for flip-flop qubits is here proposed and the effect of a realistic 1/f noise on the gate fidelity is investigated for the single qubit $R_z(-\fracπ{2})$ and Hadamard gate and for the two-qubit $\sqrt{iSWAP}$ gate.