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Elena Ferraro

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quant-ph cond-mat.mtrl-sci

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preprint2021arXiv

Parallel Gate Operations Fidelity in a Linear Array of Flip-Flop Qubits

Quantum computers based on silicon are promising candidates for long term universal quantum computation due to the long coherence times of electron and nuclear spin states. Furthermore, the continuous progress of micro- and nano- electronics, also related to the scaling of Metal-Oxide-Semiconductor (MOS) systems, makes possible to control the displacement of single dopants thus suggesting their exploitation as qubit holders. Flip-flop qubit is a donor based qubit (DQ) where interactions between qubits are achievable for distance up to several hundred nanometers. In this work, a linear array of flip-flop qubits is considered and the unwanted mutual qubit interactions due to the simultaneous application of two one-qubit and two two-qubit gates are included in the quantum gate simulations. In particular, by studying the parallel execution of couples of one-qubit gates, namely Rz(-pi/2) and Rx(-pi/2), and of couples of two-qubit gate, i.e. \sqrt{iSWAP}, a safe inter-qubit distance is found where unwanted qubit interactions are negligible thus leading to parallel gates fidelity up to 99.9%.

preprint2021arXiv

Universal set of quantum gates for the flip-flop qubit in the presence of 1/f noise

Impurities hosted in semiconducting solid matrices represent an extensively studied platform for quantum computing applications. In this scenario, the so-called flip-flop qubit emerges as a convenient choice for scalable implementations in silicon. Flip-flop qubits are realized implanting phosphorous donor in isotopically purified silicon, and encoding the logical states in the donor nuclear spin and in its bound electron. Electrically modulating the hyperfine interaction by applying a vertical electric field causes an Electron Dipole Spin Resonance (EDSR) transition between the states with antiparallel spins $\{|\downarrow\Uparrow\rangle,|\uparrow\Downarrow\rangle\}$, that are chosen as the logical states. When two qubits are considered, the dipole-dipole interaction is exploited allowing long-range coupling between them. A universal set of quantum gates for flip-flop qubits is here proposed and the effect of a realistic 1/f noise on the gate fidelity is investigated for the single qubit $R_z(-\fracπ{2})$ and Hadamard gate and for the two-qubit $\sqrt{iSWAP}$ gate.

preprint2020arXiv

Is all-electrical silicon quantum computing feasible in the long term?

The development of the first generation of commercial quantum computers is based on superconductive qubits and trapped ions respectively. Other technologies such as semiconductor quantum dots, neutral ions and photons could in principle provide an alternative to achieve comparable results in the medium term. It is relevant to evaluate if one or more of them is potentially more effective to address scalability to millions of qubits in the long term, in view of creating a universal quantum computer. We review an all-electrical silicon spin qubit, that is the double quantum dot hybrid qubit, a quantum technology which relies on both solid theoretical grounding on one side, and massive fabrication technology of nanometric scale devices by the existing silicon supply chain on the other.

preprint2016arXiv

Thermodynamics of the heat currents in the longitudinal spin Seebeck and spin Peltier effects

We employ the non-equilibrium thermodynamics of currents and forces to describe the heat transport caused by a spin current in a Pt/YIG bilayer. By starting from the constitutive equations of the magnetization currents in both Pt and YIG, we derive the magnetization potentials and currents. We apply the theory to the spin Peltier experiments in which a spin current, generated by the spin Hall effect in Pt, is injected into YIG. We find that efficient injection is obtained when: i) the thickness of each layer is larger than its diffusion length: $t_{Pt} > l_{Pt}$ and $t_{YIG} > l_{YIG}$ and ii) the ratio $(l_{Pt}/τ_{Pt})/(l_{YIG}/τ_{YIG})$ is small, where $τ_i$ is the time constant of the intrinsic damping ($i=Pt, YIG$). We finally derive the temperature profile in adiabatic conditions. The scale of the effect is given by the parameter $ΔT_{SH}$ which is proportional to the electric current in Pt. Using known parameters for Pt and YIG we estimate $ΔT_{SH}/j_e = 4 \cdot 10^{-13}$ K A$^{-1}$m$^2$. This value is of the same order of magnitude of the spin Peltier experiments.