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Marco De Michielis

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Published work

3 published item(s)

preprint2021arXiv

Parallel Gate Operations Fidelity in a Linear Array of Flip-Flop Qubits

Quantum computers based on silicon are promising candidates for long term universal quantum computation due to the long coherence times of electron and nuclear spin states. Furthermore, the continuous progress of micro- and nano- electronics, also related to the scaling of Metal-Oxide-Semiconductor (MOS) systems, makes possible to control the displacement of single dopants thus suggesting their exploitation as qubit holders. Flip-flop qubit is a donor based qubit (DQ) where interactions between qubits are achievable for distance up to several hundred nanometers. In this work, a linear array of flip-flop qubits is considered and the unwanted mutual qubit interactions due to the simultaneous application of two one-qubit and two two-qubit gates are included in the quantum gate simulations. In particular, by studying the parallel execution of couples of one-qubit gates, namely Rz(-pi/2) and Rx(-pi/2), and of couples of two-qubit gate, i.e. \sqrt{iSWAP}, a safe inter-qubit distance is found where unwanted qubit interactions are negligible thus leading to parallel gates fidelity up to 99.9%.

preprint2021arXiv

Universal set of quantum gates for the flip-flop qubit in the presence of 1/f noise

Impurities hosted in semiconducting solid matrices represent an extensively studied platform for quantum computing applications. In this scenario, the so-called flip-flop qubit emerges as a convenient choice for scalable implementations in silicon. Flip-flop qubits are realized implanting phosphorous donor in isotopically purified silicon, and encoding the logical states in the donor nuclear spin and in its bound electron. Electrically modulating the hyperfine interaction by applying a vertical electric field causes an Electron Dipole Spin Resonance (EDSR) transition between the states with antiparallel spins $\{|\downarrow\Uparrow\rangle,|\uparrow\Downarrow\rangle\}$, that are chosen as the logical states. When two qubits are considered, the dipole-dipole interaction is exploited allowing long-range coupling between them. A universal set of quantum gates for flip-flop qubits is here proposed and the effect of a realistic 1/f noise on the gate fidelity is investigated for the single qubit $R_z(-\fracπ{2})$ and Hadamard gate and for the two-qubit $\sqrt{iSWAP}$ gate.

preprint2012arXiv

Few Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors

We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 $\times$ 20 nm$^{2}$ is obtained by employing electron beam lithography for active and gate levels patterning. The Coulomb blockade stability diagram is precisely resolved at 4.2 K and it exhibits large addition energies of tens of meV. The confinement of the electrons in the quantum dot has been modeled by using a Current Spin Density Functional Theory (CS-DFT) method. CMOS technology enables massive production of SETs for ultimate nanoelectronics and quantum variables based devices.