Abstract
We report an in-situ microbeam grazing incidence X-ray scattering study of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C-BTBT) organic semiconductor thin film deposition by hollow pen writing. Multiple transient phases are observed during the crystallization for substrate temperatures up to 93C. The layered smectic liquid-crystalline phase of C-BTBT initially forms and preceedes inter-layer ordering, followed by a transient crystalline phase for temperature 60C, and ultimately the stable phase. Based on these results, we demonstrate a method to produce extremely large grain size and high carrier mobility during high-speed processing. For high writing speed (25 mm/s) mobility up to 3.0 cm/V-s has been observed.
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