Researcher profile

Randall L. Headrick

Randall L. Headrick contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2021arXiv

de Gennes Narrowing and the Relationship Between Structure and Dynamics in Self-Organized Ion Beam Nanopatterning

Investigating the relationship between structure and dynamical processes is a central goal in condensed matter physics. Perhaps the most noted relationship between the two is the phenomenon of de Gennes narrowing, in which relaxation times in liquids are proportional to the scattering structure factor. Here a similar relationship is discovered during the self-organized ion beam nanopatterning of silicon using coherent x-ray scattering. However, in contrast to the exponential relaxation of fluctuations in classic de Gennes narrowing, the dynamic surface exhibits a wide range of behaviors as a function of length scale, with a compressed exponential relaxation at lengths corresponding to the dominant structural motif - self-organized nanoscale ripples. These behaviors are reproduced in simulations of a nonlinear model describing the surface evolution. We suggest that the compressed exponential behavior observed here is due to the morphological persistence of the self-organized surface ripple patterns which form and evolve during ion beam nanopatterning.

preprint2019arXiv

Homoepitaxial growth of SrTiO$_3$ by Pulsed Laser Deposition: energetic vs thermal growth

Pulsed Laser Deposition (PLD) is widely used to grow epitaxial thin films of quantum materials such as complex oxides. Here, we use in-situ X-ray scattering to study homoepitaxy of SrTiO$_3$ by energetic (e-) and thermalized (th-) PLD. We find that e-PLD suppresses the lateral growth of two-dimensional islands, which suggests that energetic particles break up smaller islands. Fast interlayer transport occurs for both e-PLD and th-PLD, implying a process operating on sub-microsecond timescales that doesn't depend strongly on the kinetic energy of the incident particles.

preprint2019arXiv

Role of ferroelectric polarization during growth of highly strained ferroelectrics revealed by in-situ x-ray diffraction

Strain engineering of perovskite oxide thin films has proven to be an extremely powerful method for enhancing and inducing ferroelectric behavior. In ferroelectric thin films and superlattices, the polarization is intricately linked to crystal structure, but we show here that it can also play an important role in the growth process, influencing growth rates, relaxation mechanisms, electrical properties and domain structures. We have studied this effect in detail by focusing on the properties of BaTiO$_{3}$ thin films grown on very thin layers of PbTiO$_{3}$ using a combination of x-ray diffraction, piezoforce microscopy, electrical characterization and rapid in-situ x-ray diffraction reciprocal space maps during the growth using synchrotron radiation. Using a simple model we show that the changes in growth are driven by the energy cost for the top material to sustain the polarization imposed upon it by the underlying layer, and these effects may be expected to occur in other multilayer systems where polarization is present during growth. Our research motivates the concept of polarization engineering during the growth process as a new and complementary approach to strain engineering.