Researcher profile

Jing Wan

Jing Wan contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2022arXiv

Buckling behavior of tenary one-dimensional van der Waals heterostructures

1D van der Waals heterostructures (1D vdWH) were recently reported to be successfully synthesized. We perform molecular dynamics simulations to investigate the buckling behavior of a 1D vdWH composed of inner carbon nanotube, a middle boron nitride nanotube and an outer molybdenum disulfide nanotube. We find that as the temperature increases, the 1D vdWH gradully loses its stability and the peak value of compressive stress decreases. Slenderness ratio have a slight influence on the strength and stability of 1D vdWH under axial compression.

preprint2016arXiv

Nucleation and strain-stabilization during organic semiconductor thin film deposition

The nucleation mechanisms during solution deposition of organic semiconductor thin films determine the grain morphology and may influence the crystalline packing in some cases. Here, in-situ optical spectromicroscopy in reflection mode is used to study the growth mechanisms and thermal stability of 6,13-bis(trisopropylsilylethynyl)-pentacene thin films. The results show that the films form in a supersaturated state before transforming to a solid film. Molecular aggregates corresponding to subcritical nuclei in the crystallization process are inferred from optical spectroscopy measurements of the supersaturated region. Strain-free solid films exhibit a temperature-dependent blue shift of optical absorption peaks due to a continuous thermally driven change of the crystalline packing. As crystalline films are cooled to ambient temperature they become strained although cracking of thicker films is observed, which allows the strain to partially relax. Below a critical thickness, cracking is not observed and grazing incidence X-ray diffraction measurements confirm that the thinnest films are constrained to the lattice constants corresponding to the temperature at which they were deposited. Optical spectroscopy results show that the transition temperature between Form I (room temperature phase) and Form II (high temperature phase) depends on the film thickness, and that Form I can also be strain-stabilized up to 135$^\circ$C.

preprint2015arXiv

Transient phases during fast crystallization of organic thin films from solution

We report an in-situ microbeam grazing incidence X-ray scattering study of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C$_8$-BTBT) organic semiconductor thin film deposition by hollow pen writing. Multiple transient phases are observed during the crystallization for substrate temperatures up to $\approx$93$^\circ$C. The layered smectic liquid-crystalline phase of C$_8$-BTBT initially forms and preceedes inter-layer ordering, followed by a transient crystalline phase for temperature $>$60$^\circ$C, and ultimately the stable phase. Based on these results, we demonstrate a method to produce extremely large grain size and high carrier mobility during high-speed processing. For high writing speed (25 mm/s) mobility up to 3.0 cm$^2$/V-s has been observed.

preprint2010arXiv

Recurrence and Polya number of general one-dimensional random walks

The recurrence properties of random walks can be characterized by Pólya number, i.e., the probability that the walker has returned to the origin at least once. In this paper, we consider recurrence properties for a general 1D random walk on a line, in which at each time step the walker can move to the left or right with probabilities $l$ and $r$, or remain at the same position with probability $o$ ($l+r+o=1$). We calculate Pólya number $P$ of this model and find a simple expression for $P$ as, $P=1-Δ$, where $Δ$ is the absolute difference of $l$ and $r$ ($Δ=|l-r|$). We prove this rigorous expression by the method of creative telescoping, and our result suggests that the walk is recurrent if and only if the left-moving probability $l$ equals to the right-moving probability $r$.