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Source author record

Abhishek K. Singh

Abhishek K. Singh appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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gr-qchep-thcond-mat.mtrl-scihep-phcond-mat.mes-hallhep-latastro-ph.COmath-phmath.MP

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Published work

18 published item(s)

preprint2020arXiv

Stacking Order Driven Optical Properties and Carrier Dynamics in ReS2

Two distinct stacking orders in ReS2 are identified without ambiguity and their influence on vibrational, optical properties and carrier dynamics are investigated. With atomic resolution scanning transmission electron microscopy (STEM), two stacking orders are determined as AA stacking with negligible displacement across layers, and AB stacking with about a one-unit cell displacement along the a axis. First-principle calculations confirm that these two stacking orders correspond to two local energy minima. Raman spectra inform a consistent difference of modes I & III, about 13 cm-1 for AA stacking, and 20 cm-1 for AB stacking, making a simple tool for determining the stacking orders in ReS2. Polarized photoluminescence (PL) reveals that AB stacking possesses blue-shifted PL peak positions, and broader peak widths, compared with AA stacking, indicating stronger interlayer interaction. Transient transmission measured with femtosecond pump probe spectroscopy suggests exciton dynamics being more anisotropic in AB stacking, where excited state absorption related to Exc. III mode disappears when probe polarization aligns perpendicular to b axis. Our findings underscore the stacking-order driven optical properties and carrier dynamics of ReS2, mediate many seemingly contradictory results in literature, and open up an opportunity to engineer electronic devices with new functionalities by manipulating the stacking order.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Diffusive nature of thermal transport in stanene

Using the phonon Boltzmann transport formalism and density functional theory based calculations, we show that stanene has a low thermal conductivity. For a sample size of 1$\times$1 $μ$m$^{2}$ ($L\times W$), the lattice thermal conductivities along the zigzag and armchair directions are 10.83 W/m-K and 9.2 W/m-K respectively, at room temperature, indicating anisotropy in the thermal transport. The low values of thermal conductivity are due to large anharmonicity in the crystal resulting in high Grüneisen parameters, and low group velocities. The room temperature effective phonon mean free path is found to be around 17 nm indicating that the thermal transport in stanene is completely diffusive in nature. Furthermore, our study brings out the relative importance of the contributing phonon branches and reveals that, at very low temperatures, the contribution to lattice thermal conductivity comes from the flexural acoustic (ZA) branch and at higher temperatures it is dominated by the longitudinal acoustic (LA) branch. We also show that lattice thermal conductivity of stanene can further be reduced by tuning the sample size and creating rough surfaces at the edges. Such tunability in the lattice thermal conductivity in stanene suggests its applications in thermoelectric devices.

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preprint2015arXiv

From semiconductor to metal: A reversible tuning of electronic properties of mono to multilayered SnS$_\mathrm{2}$ under applied strain

Controlled variation of the electronic properties of 2D materials by applying strain has emerged as a promising way to design materials for customized applications. Using first principles density functional theory calculations, we show that while the electronic structure and indirect band gap of SnS$_\mathrm{2}$ do not change significantly with the number of layers, they can be reversibly tuned by applying biaxial tensile (BT), biaxial compressive (BC), and normal compressive (NC) strains. Mono to multilayered SnS$_\mathrm{2}$ exhibit a reversible semiconductor to metal transition (S-M) at strain values of 0.17, $-$0.26, and $-$0.24 under BT, BC, and NC strains, respectively. Due to weaker interlayer coupling, the critical strain value required to achieve S-M transition in SnS$_\text{2}$ under NC strain is much higher than for MoS$_\mathrm{2}$. The S-M transition for BT, BC, and NC strains is caused by the interaction between the S-$p_z$ and Sn-$s$, S-$p_x$/$p_y$ and Sn-$s$, and S-$p_z$ and Sn-$s$ orbitals, respectively.

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preprint2015arXiv

Non-perturbative quantum effects in stringy degenerate geometries: Vacuum created pair of $(D{\bar D})_3$-brane by a two form

We obtain axionic charged primordial black holes on a vacuum created gravitational pair of $(3{\bar 3})$-brane by the Kalb-Ramond field on a $D_4$-brane in presence of a background open string metric. The new geometries on an emergent pair of $(3{\bar 3})$-brane universe is shown to be influenced by the non-perturbative quantum effects underlying a geometric torsion in a second order formalism. The presence of small extra dimensions transverse to the pair in the formalism ensures dynamical scalar fields hidden to a $3$-brane or an anti 3-brane universe. We investigate the non-perturbative quantum vacua for their characteristic properties to explain the accelerated expansion of our universe. Interestingly the emergent brane universe is shown to possess its origin in a degenerate stringy de Sitter vacua at an early epoch. A non-perturbative $D_p$-brane world volume correction for $p < 3$ is worked out to explain some of the quantum effects underlying a quintessence axion in the string-brane setup. Our analysis reveals that a $D$-instanton can be a potential candidate to source the dark energy in our brane universe.

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preprint2014arXiv

Effect of strain on electronic and thermoelectric properties of few layers to bulk MoS$_{2}$

The sensitive dependence of electronic and thermoelectric properties of MoS$_2$ on the applied strain opens up a variety of applications in the emerging area of straintronics. Using first principles based density functional theory calculations, we show that the band gap of few layers of MoS$_2$ can be tuned by applying i) normal compressive (NC), ii) biaxial compressive (BC), and iii) biaxial tensile (BT) strain. A reversible semiconductor to metal transition (S-M transition) is observed under all three types of strain. In the case of NC strain, the threshold strain at which S-M transition occurs increases with increasing number of layers and becomes maximum for the bulk. On the other hand, the threshold strain for S-M transition in both BC and BT strain decreases with the increase in number of layers. The difference in the mechanisms for the S-M transition is explained for different types of applied strain. Furthermore, the effect of strain type and number of layers on the transport properties are also studied using Botzmann transport theory. We optimize the transport properties as a function of number of layers and applied strain. 3L- and 2L-MoS$_2$ emerge as the most efficient thermoelectric material under NC and BT strain, respectively. The calculated thermopower is large and comparable to some of the best thermoelectric materials. A comparison between the feasibility of these three types of strain is also discussed.

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preprint2014arXiv

Quantum Kerr(Newman) degenerate stringy vacua in 4D on a non-BPS brane

We investigate some of the quantum gravity effects on a vacuum created pair of $(D{\bar D})_3$-brane by a non-linear $U(1)$ gauge theory on a $D_4$-brane. In particular we obtain a four dimensional quantum Kerr(Newman) black hole in an effective torsion curvature formalism sourced by a two form dynamics in the world-volume of a $D_4$-brane on $S^1$. Interestingly the event horizon is found to be independent of a non-linear electric charge and the $4D$ quantum black hole is shown to describe a degenerate vacua in string theory. We show that the quantum Kerr brane universe possesses its origin in a de Sitter vacuum. In a nearly $S_2$-symmetric limit the Kerr geometries may seen to describe a Schwarzschild and Reissner-Nordstrom quantum black holes. It is argued that a quantum Reissner-Nordstrom tunnels to a large class of degenerate Schwazschild vacua. In a low energy limit the non-linear electric charge becomes significant at the expense of the degeneracies. In the limit the quantum geometries may identify with the semi-classical black holes established in Einstein gravity. Analysis reveals that a quantum geometry on a vacuum created $D_3$-brane universe may be described by a low energy perturbative string vacuum in presence of a non-perturbative quantum correction.

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preprint2014arXiv

Quintessence and effective AdS brane geometries

A geometric torsion dynamics leading to an effective curvature in a second order formalism on a D4-brane is revisited with a renewed interest. We obtain two effective $AdS_4$ brane geometries on a vacuum created pair of $(D{\bar D})_3$-brane. One of them is shown to describe an AdS Schwarzschild spinning black hole and the other is shown to describe a spinning black hole bound state. It is argued that a D-instanton in a vacuum created anti D3-brane within a pair may describe a quintessence. It may seen to incorporate a varying vacuum energy density in a brane universe. We consider the effective curvature scalar on $S^1\times S^1$ to analyze torsion-less geometries on a vacuum created pair of $(D{\bar D})_2$-brane. The emergent $AdS_3$ brane is shown to describe a Schwarzschild and a Reissner-Nordstrom (RN) geometries in presence of extra dimension(s).

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preprint2014arXiv

Quintessence and effective RN de Sitter brane geometries

We revisit an effective space-time torsion curvature in a second order formalism, underlying the non-linear $U(1)$ gauge dynamics, of a two form on a $D_4$-brane in type IIA superstring theory. The formalism incorporates the significance of a global NS two form into the theory via its perturbative coupling to a dynamical two form. In particular, we explore the non-linear gauge dynamics on a $D_4$-brane in presence of a non-trivial background metric. The fact that the global modes of a NS two form in an open string theory sources the background metric on a $D_4$-brane may hint at the existence of an anti $D_4$-brane in the formalism. An effective de Sitter universe is shown to emerge on a vacuum created pair of $(D{\bar D})_3$-brane by a local two form at the past horizon with a Big Bang. We obtain a number of 4D de Sitter quantum black holes, including a Reissner-Nordstrom vacuum, with and without a propagating torsion. The quantum black holes are shown to be free from curvature singularity at $r\rightarrow 0$. In a low energy limit, the nonperturbative correction sourced by a torison may seen to be insignificant. The quantum black hole undergoes an expansion in the limit and presumably identifies with the Einstein vacuum. Interestingly our analysis reveals a plausible quintessence (axion) on an anti $D_3$-brane which may source the dark energy in a $D_3$-brane universe. Arguably a brane universe moves away from its anti-brane due to the conjectured repulsive gravity underlying the quintessence. It leads to a growth in extra fifth dimension between a brane and an anti-brane which may provide a clue behind an accelerating universe observed in cosmology.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Semiconductor to metal transition in bilayer phosphorene under normal compressive strain

Phosphorene, a two-dimensional (2D) analog of black phosphorous, has been a subject of immense interest recently, due to its high carrier mobilities and a tunable bandgap. So far, tunability has been predicted to be obtained with very high compressive/tensile in-plane strains, and vertical electric field, which are difficult to achieve experimentally. Here, we show using density functional theory based calculations the possibility of tuning electronic properties by applying normal compressive strain in bilayer phosphorene. A complete and fully reversible semiconductor to metal transition has been observed at $\sim13.35\%$ strain, which can be easily realized experimentally. Furthermore, a direct to indirect bandgap transition has also been observed at $\sim3\%$ strain, which is a signature of unique band-gap modulation pattern in this material. The absence of negative frequencies in phonon spectra as a function of strain demonstrates the structural integrity of the sheets at relatively higher strain range. The carrier mobilities and effective masses also do not change significantly as a function of strain, keeping the transport properties nearly unchanged. This inherent ease of tunability of electronic properties without affecting the excellent transport properties of phosphorene sheets is expected to pave way for further fundamental research leading to phosphorene-based multi-physics devices.

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preprint2014arXiv

Strain-induced electronic phase transition and strong enhancement of thermopower of TiS2

Using first principles density functional theory calculations, we show a semimetal to semiconducting electronic phase transition for bulk TiS 2 by applying uniform biaxial tensile strain. This electronic phase transition is triggered by charge transfer from Ti to S, which eventually reduces the overlap between Ti-(d) and S-(p) orbitals. The electronic transport calculations show a large anisotropy in electrical conductivity and thermopower, which is due to the difference in the effective masses along the in-plane and out of plane directions. Strain induced opening of band gap together with changes in dispersion of bands lead to three-fold enhancement in thermopower for both p- and n-type TiS2 . We further demonstrate that the uniform tensile strain, which enhances the thermoelectric performance, can be achieved by doping TiS2 with larger iso-electronic elements such as Zr or Hf at Ti sites.

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preprint2013arXiv

Discrete torsion, de Sitter tunneling vacua and AdS brane: U(1) gauge theory on D4-brane and an effective curvature

The U(1) gauge dynamics on a D4-brane is revisited, with a two form, to construct an effective curvature theory in a second order formalism. We exploit the local degrees in a two form, and modify its dynamics in a gauge invariant way, to incorporate a non-perturbative metric fluctuation in an effective D4-brane. Interestingly, the near horizon D4-brane is shown to describe an asymptotic Anti de Sitter (AdS) in a semi-classical regime. Using Weyl scaling(s), we obtain the emergent rotating geometries leading to primordial de Sitter (dS) and AdS vacua in a quantum regime. Under a discrete transformation, we re-arrange the mixed dS patches to describe a Schwazschild-like dS (SdS) and a topological-like dS (TdS) black holes. We analyze SdS vacuum for Hawking radiations to arrive at Nariai geometry, where a discrete torsion forms a condensate. We perform thermal analysis to identify Nariai vacuum with a TdS. Investigation reveals an AdS patch within a thermal dS brane, which may provide a clue to unfold dS/CFT. In addition, the role of dark energy, sourced by a discrete torsion, in the dS vacua is investigated using Painleve geometries. It is argued that a D-instanton pair is created by a discrete torsion, with a Big Bang/Crunch, at the past horizon in a pure dS. Nucleation, of brane/anti-brane pair(s), is qualitatively analyzed to construct an effective space-time on a D4-brane and its anti brane. Analysis re-assures the significant role played by a non-zero mode, of NS-NS two form, to generalize the notion of branes within a brane.

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preprint2013arXiv

Emergent Schwarzschild and Reissner-Nordstrom black holes in 4D: An effective curvature sourced by a B2-field on a D4-brane

We obtain a Schwarzschild and a Reissner-Nordstrom emergent black holes, by exploring the torsion dynamics in a generalized curvature formulation, underlying an effective D4-brane on S1. It is shown that a constant effective metric, sourced by a background fluctuation in B2-potential, on a D3-brane receives a dynamical quantum correction in presence of an electric charge.

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preprint2013arXiv

Quantum Kerr tunneling vacua on a $(D{\bar D})_4$-brane: An emergent Kerr black hole in five dimensions

We revisit a non-perturbative space-time curvature theory, underlying a two form U(1) gauge dynamics, on a D4-brane. In particular, two different gauge choices for a two form are explored underlying the dynamics of a geometric torsion in a second order formalism. We obtain two non-extremal quantum Kerr geometries in five dimensions on a pair of $(D{\bar D})_4$-brane in a type IIA superstring theory. The quantum vacua are described by a vanishing torsion in a gauge choice, underlying a geometric realization, on a non-BPS brane. It is argued that the quantum Kerr vacua undergo tunneling and lead to a five dimensional Kerr black hole in Einstein vacuum. A low energy limit in the quantum Kerr vacua further re-assures an emergent Kerr black hole.

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preprint2013arXiv

Thermoelectric properties of $β$-FeSi$_{\text2}$

We investigate the thermoelectric properties of $β$-FeSi$_{\text2}$ using first principles electronic structure and Boltzmann transport calculations. We report a high thermopower for both \textit{p}- and \textit{n}-type $β$-FeSi$_{\text2}$ over a wide range of carrier concentration and in addition find the performance for \textit{n}-type to be higher than for the \textit{p}-type. Our results indicate that, depending upon temperature, a doping level of 3$\times10{^{20}}$ - 2$\times10{^{21}}$ cm${^{-3}}$ may optimize the thermoelectric performance.

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preprint2012arXiv

Semiconductor-metal transition in semiconducting bilayer sheets of transition metal dichalcogenides

Using first-principles calculations we show that the band gap of bilayer sheets of semiconducting transition metal dichalcogenides (TMDs) can be reduced smoothly by applying vertical compressive pressure. These materials undergo a universal reversible semiconductor to metal (S-M) transition at a critical pressure. S-M transition is attributed to lifting the degeneracy of the bands at fermi level caused by inter-layer interactions via charge transfer from metal to chalcogens. The S-M transition can be reproduced even after incorporating the band gap corrections using hybrid functionals and GW method. The ability to tune the band gap of TMDs in a controlled fashion over a wide range of energy, opens-up possibility for its usage in a range of applications.

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preprint2011arXiv

Patterning Nanoroads and Quantum Dots on Fluorinated Graphene

Using ab initio methods we have investigated the fluorination of graphene and find that different stoichiometric phases can be formed without a nucleation barrier, with the complete "2D-Teflon" CF phase being thermodynamically most stable. The fluorinated graphene is an insulator and turns out to be a perfect matrix-host for patterning nanoroads and quantum dots of pristine graphene. The electronic and magnetic properties of the nanoroads can be tuned by varying the edge orientation and width. The energy gaps between the highest occupied and lowest unoccupied molecular orbitals (HOMO-LUMO) of quantum dots are size-dependent and show a confinement typical of Dirac fermions. Furthermore, we study the effect of different basic coverage of F on graphene (with stoichiometries CF and C$_{4}$F) on the band gaps, and show the suitability of these materials to host quantum dots of graphene with unique electronic properties.

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preprint2010arXiv

Emergent gravity/Non-linear U(1) gauge theory correspondence

Kaluza-Klein gravity is revisted, with renewed interest, in a type IIB string theory on $S^1\times K3$. The irreducible curvature tensors are worked out in the, T-dual, emergent gravity in 4D to yield a non-linear U(1) gauge theory. Interestingly, the T-duality may be seen to describe an open/closed string duality at a self-dual string coupling. The obtained deformation in $AdS_5$ black hole is analyzed to introduce the notion of temperature in the emergent gravity underlying the recent idea of entropic force.

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preprint2010arXiv

Gravity dual D3-braneworld and Open/Closed string duality

A covariantly constant dynamical two-form is exploited on a $D_3$-brane to obtain its gravity dual action, governing an $S^3$ deformed $AdS_5$ black hole, in a type IIB string theory on $S^1\times K3$. We invoke the Kaluza-Klein compactification to work out the open/closed string duality. Interestingly, the Reissner-Nordstrom black hole is obtained on the "non-Reimannian" braneworld.

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