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Z. L. Xiao

Z. L. Xiao contributes to research discovery and scholarly infrastructure.

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Published work

8 published item(s)

preprint2015arXiv

Enhancing superconducting critical current by randomness

The key ingredient of high critical currents in a type-II superconductor is defect sites that 'pin' vortices. Contrary to earlier understanding on nano-patterned artificial pinning, here we show unequivocally the advantages of a random pinscape over an ordered array in a wide magnetic field range. We reveal that the better performance of a random pinscape is due to the variation of its local-density-of-pinning-sites (LDOPS), which mitigates the motion of vortices. This is confirmed by achieving even higher enhancement of the critical current through a conformally mapped random pinscape, where the distribution of the LDOPS is further enlarged. The demonstrated key role of LDOPS in enhancing superconducting critical currents gets at the heart of random versus commensurate pinning. Our findings highlight the importance of random pinscapes in enhancing the superconducting critical currents of applied superconductors.

preprint2015arXiv

Origin of the turn-on temperature behavior in WTe$_2$

A hallmark of materials with extremely large magnetoresistance (XMR) is the transformative 'turn-on' temperature behavior: when the applied magnetic field $H$ is above certain value, the resistivity versus temperature $ρ(T)$ curve shows a minimum at a field dependent temperature $T^*$, which has been interpreted as a magnetic-field-driven metal-insulator transition or attributed to an electronic structure change. Here, we demonstrate that $ρ(T)$ curves with turn-on behavior in the newly discovered XMR material WTe$_2$ can be scaled as MR $\sim(H/ρ_0)^m$ with $m\approx 2$ and $ρ_0$ being the resistivity at zero-field. We obtained experimentally and also derived from the observed scaling the magnetic field dependence of the turn-on temperature $T^* \sim (H-H_c)^ν$ with $ν\approx 1/2$, which was earlier used as evidence for a predicted metal-insulator transition. The scaling also leads to a simple quantitative expression for the resistivity $ρ^* \approx 2 ρ_0$ at the onset of the XMR behavior, which fits the data remarkably well. These results exclude the possible existence of a magnetic-field-driven metal-insulator transition or significant contribution of an electronic structure change to the low-temperature XMR in WTe$_2$. This work resolves the origin of the turn-on behavior observed in several XMR materials and also provides a general route for a quantitative understanding of the temperature dependence of MR in both XMR and non-XMR materials.

preprint2015arXiv

Temperature dependent three-dimensional anisotropy of the magnetoresistance in WTe$_2$

Extremely large magnetoresistance (XMR) was recently discovered in WTe$_2$, triggering extensive research on this material regarding the XMR origin. Since WTe$_2$ is a layered compound with metal layers sandwiched between adjacent insulating chalcogenide layers, this material has been considered to be electronically two-dimensional (2D). Here we report two new findings on WTe$_2$: (1) WTe$_2$ is electronically 3D with a mass anisotropy as low as $2$, as revealed by the 3D scaling behavior of the resistance $R(H,θ)=R(\varepsilon_θH)$ with $\varepsilon_θ=(\cos^2 θ+ γ^{-2}\sin^2 θ)^{1/2}$, $θ$ being the magnetic field angle with respect to c-axis of the crystal and $γ$ being the mass anisotropy; (2) the mass anisotropy $γ$ varies with temperature and follows the magnetoresistance behavior of the Fermi liquid state. Our results not only provide a general scaling approach for the anisotropic magnetoresistance but also are crucial for correctly understanding the electronic properties of WTe$_2$, including the origin of the remarkable 'turn-on' behavior in the resistance versus temperature curve, which has been widely observed in many materials and assumed to be a metal-insulator transition.

preprint2013arXiv

Realization of Artificial Ice Systems for Magnetic Vortices in a Superconducting MoGe Thin-film with Patterned Nanostructures

We report an anomalous matching effect in MoGe thin films containing pairs of circular holes arranged in such a way that four of those pairs meet at each vertex point of a square lattice. A remarkably pronounced fractional matching was observed in the magnetic field dependences of both the resistance and the critical current. At the half matching field the critical current can be even higher than that at zero field. This has never been observed before for vortices in superconductors with pinning arrays. Numerical simulations within the nonlinear Ginzburg-Landau theory reveal a square vortex ice configuration in the ground state at the half matching field and demonstrate similar characteristic features in the field dependence of the critical current, confirming the experimental realization of an artificial ice system for vortices for the first time.

preprint2012arXiv

Catalyst-Free Growth of Millimeter-Long Topological Insulator Bi2Se3 Nanoribbons and the Observation of pi Berry Phase

We report the growth of single-crystalline Bi2Se3 nanoribbons with lengths up to several millimeters via a catalyst-free physical vapor deposition method. Scanning transmission electron microscopy analysis reveals that the nanoribbons grow along the (1120) direction. We obtain a detailed characterization of the electronic structure of the Bi2Se3 nanoribbons from measurements of Shubnikov-de Haas (SdH) quantum oscillations. Angular dependent magneto-transport measurements reveal a dominant two-dimensional contribution originating from surface states and weak contribution from the bulk states. The catalyst-free synthesis yields high-purity nanocrystals enabling the observation of a large number of SdH oscillation periods and allowing for an accurate determination of the pi-Berry phase, one of the key features of Dirac fermions in topological insulators. The long-length nanoribbons can empower the potential for fabricating multiple nanoelectronic devices on a single nanoribbon.

preprint2012arXiv

Large Magnetoresistance Oscillations in Mesoscopic Superconductors Due to Current-Excited Moving Vortices

We show in the case of a superconducting Nb ladder that a mesoscopic superconductor typically exhibits magnetoresistance oscillations whose amplitude and temperature dependence are different from those stemming from the Little-Parks effect. We demonstrate that these large resistance oscillations (as well as the monotonic background on which they are superimposed) are due to {\it current-excited moving vortices}, where the applied current in competition with the oscillating Meissner currents imposes/removes the barriers for vortex motion in increasing magnetic field. Due to the ever present current in transport measurements, this effect should be considered in parallel with the Little-Parks effect in low-$T_c$ samples, as well as with recently proposed thermal activation of dissipative vortex-antivortex pairs in high-$T_c$ samples.

preprint2011arXiv

Doping and Irradiation Controlled Vortex Pinning Behavior in BaFe2(As1-xPx)2 Single Crystals

We report on the systematic evolution of vortex pinning behavior in isovalent doped single crystals of BaFe2(As1-xPx)2. Proceeding from optimal doped to ovedoped samples, we find a clear transfor- mation of the magnetization hysteresis from a fishtail behavior to a distinct peak effect followed by a reversible magnetization and Bean Livingston surface barriers. Strong point pinning dominates the vortex behavior at low fields whereas weak collective pinning determines the behavior at higher fields. In addition to doping effects, we show that particle irradiation by energetic protons can tune vortex pinning in these materials.

preprint2000arXiv

Equilibration and Dynamic Phase Transitions of a Driven Vortex Lattice

We report on the observation of two types of current driven transitions in metastable vortex lattices. The metastable states, which are missed in usual slow transport measurements, are detected with a fast transport technique in the vortex lattice of undoped 2H-NbSe$_2$. The transitions are seen by following the evolution of these states when driven by a current. At low currents we observe an equilibration transition from a metastable to a stable state, followed by a dynamic crystallization transition at high currents.