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Saskia F. Fischer

Saskia F. Fischer appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

12 published item(s)

preprint2020arXiv

Charge carrier density, mobility and Seebeck coefficient of melt-grown bulk ZnGa2O4 single crystals

The temperature dependence of the charge carrier density, mobility and Seebeck coefficient of melt-grown, bulk ZnGa2O4 single crystals was measured between 10 K and 310 K. The electrical conductivity at room temperature is about s = 286 S/cm due to a high electron concentration of n = 3.26*10^(19) cm^(-3), caused by unintenional doping. The mobility at room temperature is mu = 55 cm^2/Vs, whereas the scattering on ionized impurities limits the mobility to mu =62 cm^2/Vs for temperatures lower than 180 K. The Seebeck coefficient relative to aluminum at room temperature is S_(ZnGa2O4-Al) = (-125+-2) muV/K and shows a temperature dependence as expected for degenerate semiconductors. At low temperatures, around 60 K we observed a maximum of the Seebeck coefficient due to the phonon drag effect.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

2D layered transport properties from topological insulator Bi$_2$Se$_3$ single crystals and micro flakes

Low-field magnetotransport measurements of topological insulators such as Bi$_2$Se$_3$ are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently, a rich variety of high-field magnetotransport properties in the regime of high electron densities ($\sim10^{19}$ cm$^{-3}$) were reported, which can be related to additional two-dimensional layered conductivity, hampering the identification of the topological surface states. Here, we report that quantum corrections to the electronic conduction are dominated by the surface states for a semiconducting case, which can be analyzed by the Hikami-Larkin-Nagaoka model for two coupled surfaces in the case of strong spin-orbit interaction. However, in the metallic-like case this analysis fails and additional two-dimensional contributions need to be accounted for. Shubnikov-de Haas oscillations and quantized Hall resistance prove as strong indications for the two-dimensional layered metallic behavior. Temperature-dependent magnetotransport properties of high-quality Bi$_2$Se$_3$ single crystalline exfoliated macro and micro flakes are combined with high resolution transmission electron microscopy and energy-dispersive x-ray spectroscopy, confirming the structure and stoichiometry. Angle-resolved photoemission spectroscopy proves a single-Dirac-cone surface state and a well-defined bulk band gap in topological insulating state. Spatially resolved core-level photoelectron microscopy demonstrates the surface stability.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Temperature-dependent thermal conductivity and diffusivity of a Mg-doped insulating $β$-$\mathrm{Ga_2O_3}$ single crystal along [100], [010] and [001]

The monoclinic crystal structure of $β$-$\mathrm{Ga_2O_3}$ leads to significant anisotropy of the thermal properties. The 2$ω$-method is used to measure the thermal diffusivity $D$ in [010] and [001] direction respectively and to determine the thermal conductivity values $λ$ of the [100], [010] and [001] direction from the same insulating Mg doped $β$-$\mathrm{Ga_2O_3}$ single crystal. We detect a temperature independent anisotropy factor of both the thermal diffusivity and conductivity values of $D_{[010]}/D_{[001]}=λ_{[010]}/λ_{[001]}=1.4\pm 0.1$. The temperature-dependence is in accord with phonon-phonon-Umklapp scattering processes from 300 K down to 150 K. Below 150 K point-defect-scattering lowers the estimated phonon-phonon-Umklapp-scattering values.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Mode-selected heat flow through a one-dimensional waveguide network

Cross-correlated measurements of thermal noise are performed to determine the electron temperature in nanopatterned channels of a GaAs/AlGaAs heterostructure at 4.2 K. Two-dimensional (2D) electron reservoirs are connected via an extended one-dimensional (1D) electron waveguide network. Hot electrons are produced using a current $I_{\text{h}}$ in a source 2D reservoir, are transmitted through the ballistic 1D waveguide and relax in a drain 2D reservoir. We find that the electron temperature increase $ΔT_{\text{e}}$ in the drain is proportional to the square of the heating current $I_{\text{h}}$, as expected from Joule's law. No temperature increase is observed in the drain when the 1D waveguide does not transmit electrons. Therefore, we conclude that electron-phonon interaction is negligible for heat transport between 2D reservoirs at temperatures below 4.2 K. Furthermore, mode control of the 1D electron waveguide by application of a top-gate voltage reveals that $ΔT_{\text{e}}$ is not proportional to the number of populated subbands $N$, as previously observed in single 1D conductors. This can be explained with the splitting of the heat flow in the 1D waveguide network.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Controlled pore formation on mesoporous single crystalline silicon nanowires: threshold and mechanisms

Silicon nanowires are prepared by the method of the two-step metal-assisted wet chemical etching. We have analyzed the structure of solid, rough and porous nanowire surfaces of boron-doped silicon substrates with resistivities of ρ> 1000 Ωcm, ρ= 14-23 Ωcm, ρ< 0.01 Ωcm by scanning electron microscopy and nitrogen gas adsorption. Silicon nanowires prepared from highly-doped silicon reveal mesopores on their surface. However, we found a limit for pore formation. Pores were only formed by etching below a critical H$_2$O$_2$ concentration (c$_{\mbox{H}_2\mbox{O}_2}$ < 0.3 M). Furthermore, we have determined the pore size distribution in dependence on the etching parameters and characterized the morphology of the pores on the nanowire surface. The pores are in the regime of small mesopores with a mean diameter of 9-13 nm. Crystal and surface structure of individual mesoporous nanowires have been investigated by transmission electron microscopy. The vibrational properties of nanowire ensembles have been investigated by Raman spectroscopy. Heavily boron-doped silicon nanowires are highly porous and the remaining single crystalline silicon nanoscale mesh leads to a redshift and a strong asymmetric line broadening for Raman scattering by optical phonons at 520 cm$^{-1}$. This redshift, λ$_{\mbox{Si bulk}}$ = 520 cm$^{-1}$ $\rightarrow$ λ$_{\mbox{Si nanowire}}$ = 512 cm$^{-1}$, hints to a phonon confinement in mesoporous single crystalline silicon nanowire.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Temperature-dependent thermal conductivity in Mg-doped and undoped $β$-$\mathrm{Ga_2O_3}$ bulk-crystals

For $β$-$\mathrm{Ga_2O_3}$ only little information exist concerning the thermal properties, especially the thermal conductivity $λ$. Here, the thermal conductivity is measured by applying the electrical 3$ω$-method on Czochralski-grown $β$-$\mathrm{Ga_2O_3}$ bulk crystals, which have a thickness of $200~\mathrm{μm}$ and $800~\mathrm{μm}$. At room temperature the thermal conductivity along the [100]-direction in Mg-doped electrical insulating and undoped semiconducting $β$-$\mathrm{Ga_2O_3}$ is confirmed as $13\pm 1~\mathrm{Wm^{-1}K^{-1}}$ for both crystals. The thermal conductivity increases for decreasing temperature down to $25~\mathrm{K}$ to $λ(25~\mathrm{K})=(5.3\pm 0.6)\cdot 10^2~\mathrm{Wm^{-1}K^{-1}}$. The phonon contribution of $λ$ dominates over the electron contribution below room temperature. The observed function $λ(T)$ is in accord with phonon-phonon-Umklapp scattering and the Debye-model for the specific heat at $T\gtrsim 90~\mathrm{K}$ which is about $0.1$ fold of the Debye-temperature $θ_\mathrm{D}$. Here a detailed discussion of the phonon-phonon-Umklapp scattering for $T< θ_\mathrm{D}$ is carried out. The influence of point defect scattering is considered for $T<100~\mathrm{K}$.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Temperature-Dependent Thermoelectric Properties of Individual Silver Nanowires

Individual highly pure single crystalline silver nanowires (Ag NWs) were investigated with regard to the electrical conductivity $σ$, the thermal conductivity $λ$ and the Seebeck coefficient $S$ as function of the temperature $T$ between $1.4\,\mathrm{K}$ and room temperature (RT). Transmission electron microscopy was performed subsequently to the thermoelectric characterization of the Ag NWs, so that their transport properties can be correlated with the structural data. The crystal structure, surface morphology and the rare occurrence of kinks and twinning were identified. The thermoelectric properties of the Ag NWs are discussed in comparison to the bulk: $S_{\mathrm{Ag,Pt}}(T)$ was measured with respect to platinum and is in agreement with the bulk, $σ(T)$ and $λ(T)$ showed reduced values with respect to the bulk. The latter are both notably dominated by surface scattering caused by an increased surface-to-volume ratio. By lowering $T$ the electron mean free path strongly exceeds the NW's diameter of $150\,\mathrm{nm}$ so that the transition from diffusive transport to quasi ballistic one dimensional transport is observed. An important result of this work is that the Lorenz number $L(T)$ turns out to be independent of surface scattering. Instead the characteristic of $L(T)$ is determined by the material's purity. Moreover, $σ(T)$ and $L(T)$ can be described by the bulk Debye temperature of silver.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Noise thermometry in narrow 2D electron gas heat baths connected to a quasi-1D interferometer

Thermal voltage noise measurements are performed in order to determine the electron temperature in nanopatterned channels of a GaAs/AlGaAs heterostructure at bath temperatures of 4.2 and 1.4 K. Two narrow two-dimensional (2D) heating channels, close to the transition to the one-dimensional (1D) regime, are connected by a quasi-1D quantum interferometer. Under dc current heating of the electrons in one heating channel, we perform cross-correlated noise measurements locally in the directly heated channel and nonlocally in the other channel, which is indirectly heated by hot electron diffusion across the quasi-1D connection. We observe the same functional dependence of the thermal noise on the heating current. The temperature dependence of the electron energy-loss rate is reduced compared to wider 2D systems. In the quantum interferometer, we show the decoherence due to the diffusion of hot electrons from the heating channel into the quasi-1D system, which causes a thermal gradient.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Thermoelectric power factor of a 70 nm Ni-nanowire in a magnetic field

Thermoelectric (TE) properties of a single nanowire (NW) are investigated in a microlab which allows the determination of the Seebeck coefficient S and the conductivity σ. A significiant influence of the magnetization of a 70 nm ferromagnetic Ni-NW on its power factor S^{2}σ is observed. We detected a strong magneto thermopower effect (MTP) of about 10% and an anisotropic magneto resistance (AMR) as a function of an external magnetic field B in the order of 1%. At T = 295 K and B = 0 T we determined the absolute value of S = - (19 \pm 2) μV/K. At zero field the figure of merit ZT \approx 0.02 was calculated using the Wiedemann-Franz-law for the thermal conductivity. The thermopower S increases considerably as a function of B up to 10% at B = 0.5 T, and with a magneto thermopower of \partialS/\partialB \approx - (3.8 \pm 0,5) μV/(K.T). The AMR and MTP are related by \partials/\partialr \approx -11 \pm 1 (\partials = \partialS/S). The TE efficiency increases in a transversal magnetic field (B =0.5T) due to an enhanced power factor by nearly 20%.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Control of the transmission phase in an asymmetric four-terminal Aharonov-Bohm interferometer

Phase sensitivity and thermal dephasing in coherent electron transport in quasi one-dimensional (1D) waveguide rings of an asymmetric four-terminal geometry are studied by magnetotransport measurements. We demonstrate the electrostatic control of the phase in Aharonov-Bohm (AB) resistance oscillations and investigate the impact of the measurement circuitry on decoherence. Phase rigidity is broken due to the ring geometry: Orthogonal waveguide cross-junctions and 1D leads minimize reflections and resonances between leads allowing for a continuous electron transmission phase shift. The measurement circuitry influences dephasing: Thermal averaging dominates in the non-local measurement configuration while additional influence of potential fluctuations becomes relevant in the local configuration.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Mode-filtered electron injection into a waveguide interferometer

Injection of mode-filtered electrons into a phase-sensitive four-terminal waveguide Aharonov-Bohm (AB) ring is studied. An individually tuneable quantum point contact (QPC) in a waveguide lead of the GaAs/AlGaAs-ring allows to selectively couple to one-dimensional modes in the ring. Thus, we demonstrate single-mode transport in a multi-mode waveguide structure. Coherent mode-filtering by the lowest QPC subband is verified by non-local bend resistance and phase-sensitive AB interference measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Phase shifts and phase $π$-jumps in four-terminal waveguide Aharonov-Bohm interferometers

Quantum coherent properties of electrons can be studied in Aharonov-Bohm (AB) interferometers. We investigate both experimentally and theoretically the transmission phase evolution in a four-terminal quasi-one-dimensional AlGaAs/GaAs-based waveguide AB ring. As main control parameter besides the magnetic field, we tune the Fermi wave number along the pathways using a top-gate. Our experimental results and theoretical calculations demonstrate the strong influence of the measurement configuration upon the AB-resistance-oscillation phase in a four-terminal device. While the non-local setup displays continuous phase shifts of the AB oscillations, the phase remains rigid in the local voltage-probe setup. Abrupt phase jumps are found in all measurement configurations. We analyze the phase shifts as functions of the magnetic field and the Fermi energy and provide a detailed theoretical model of the device. Scattering and reflections in the arms of the ring are the source of abrupt phase jumps by $π$.

0 citations0 reviewsNo code linkedOpen access