Synthesis, characterization and physical properties of layered bismuthide PtBi2_2

preprint2016arXivOpen access

Abstract

We report details of single crystal growth of stoichiometric bismuthide PtBi2_2 whose structure consists of alternate stacking of Pt layer sandwiched by Bi bilayer along the cc-axis. The compound crystallizes in space group P-3 with a hexagonal unit cell of aa=bb=6.553A˚Å, cc=6.165A˚Å. The magnetization data show opposite sign for fields parallel and perpendicular to the Pt layers, respectively. The TT-dependent resistivity is typical of a metal and the magnetic response shows clear two types of charge carriers and the validity of the semi-classical Kohler's rule. Its physical properties was discussed in comparison with recently proposed topological superconductor ββ-PdBi2_2.

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