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Researcher profile

Thomas Schäpers

Thomas Schäpers contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.supr-concond-mat.str-el

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Published work

8 published item(s)

preprint2023arXiv

Ballistic surface channels in fully in situ defined Bi$_4$Te$_3$ Josephson junctions with aluminum contacts

In this letter we report on the electrical transport properties of Bi$_4$Te$_3$ in a Josephson junction geometry using superconducting Al electrodes with a Ti interdiffusion barrier. Bi$_4$Te$_3$ is proposed to be a dual topological insulator, for which due to time-reversal and mirror symmetry both a strong topological insulator phase as well as a crystalline topological phase co-exist. The formation of a supercurrent through the Bi$_4$Te$_3$ layer is explained by a two-step process. First, due to the close proximity of the Al/Ti electrodes a superconducting gap is induced within the Bi$_4$Te$_3$ layer right below the electrodes. The size of this gap is determined by analysing multiple Andreev reflections (MARs) identified within the devices differential resistance at low voltage biases. Second, based on the Andreev reflection and reverse Andreev reflection processes a supercurrent establishes in the weak link region in between these two proximity coupled regions. Analyses of the temperature dependency of both the critical current as well as MARs indicate mostly ballistic supercurrent contributions in between the proximitized Bi$_4$Te$_3$ regions even though the material is characterized by a semi-metallic bulk phase. The presence of these ballistic modes gives indications on the topological nature of Bi$_4$Te$_3$.

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preprint2023arXiv

Supercurrent in Bi$_4$Te$_3$ Topological Material-Based Three-Terminal Junctions

In an in-situ prepared three-terminal Josephson junction based on the topological insulator Bi$_4$Te$_3$ and the superconductor Nb the transport properties are studied. The differential resistance maps as a function of two bias currents reveal extended areas of Josephson supercurrent including coupling effects between adjacent superconducting electrodes. The observed dynamics for the coupling of the junctions is interpreted using a numerical simulation of a similar geometry based on a resistively and capacitively shunted Josephson junction model. The temperature dependency indicates that the device behaves similar to prior experiments with single Josephson junctions comprising topological insulators weak links. Irradiating radio frequencies to the junction we find a spectrum of integer Shapiro steps and an additional fractional step, which is interpreted by a skewed current-phase relationship. In a perpendicular magnetic field we observe Fraunhofer-like interference patterns of the switching currents.

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preprint2022arXiv

Gate-induced decoupling of surface and bulk state properties in selectively-deposited Bi$_2$Te$_3$ nanoribbons

Three-dimensional topological insulators (TIs) host helical Dirac surface states at the interface with a trivial insulator. In quasi-one-dimensional TI nanoribbon structures the wave function of surface charges extends phase-coherently along the perimeter of the nanoribbon, resulting in a quantization of transverse surface modes. Furthermore, as the inherent spin-momentum locking results in a Berry phase offset of $π$ of self-interfering charge carriers an energy gap within the surface state dispersion appears and all states become spin-degenerate. We investigate and compare the magnetic field dependent surface state dispersion in selectively deposited Bi$_2$Te$_3$ TI micro- and nanoribbon structures by analysing the gate voltage dependent magnetoconductance at cryogenic temperatures. While in wide microribbon devices the field effect mainly changes the amount of bulk charges close to the top surface we identify coherent transverse surface states along the perimeter of the nanoribbon devices responding to a change in top gate potential. We quantify the energetic spacing in between these quantized transverse subbands by using an electrostatic model that treats an initial difference in charge carrier densities on the top and bottom surface as well as remaining bulk charges. In the gate voltage dependent transconductance we find oscillations that change their relative phase by $π$ at half-integer values of the magnetic flux quantum applied coaxial to the nanoribbon, which is a signature for a magnetic flux dependent topological phase transition in narrow, selectively deposited TI nanoribbon devices.

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preprint2021arXiv

Magnetotransport signatures of three-dimensional topological insulator nanostructures

We study the magnetotransport properties of patterned 3D topological insulator nanostructures with several leads, such as kinks or Y-junctions, near the Dirac point with analytical as well as numerical techniques. The interplay of the nanostructure geometry, the external magnetic field and the spin-momentum locking of the topological surface states lead to a richer magnetoconductance phenomenology as compared to straight nanowires. Similar to straight wires, a quantized conductance with perfect transmission across the nanostructure can be realized across a kink when the input and output channels are pierced by a half-integer magnetic flux quantum. Unlike for straight wires, there is an additional requirement depending on the orientation of the external magnetic field. A right-angle kink shows a unique $π$-periodic magnetoconductance signature as a function of the in-plane angle of the magnetic field. For a Y-junction, the transmission can be perfectly steered to either of the two possible output legs by a proper alignment of the external magnetic field. These magnetotransport signatures offer new ways to explore topological surface states and could be relevant for quantum transport experiments on nanostructures which can be realized with existing fabrication methods.

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preprint2020arXiv

Exfoliated hexagonal BN as gate dielectric for InSb nanowire quantum dots with improved gate hysteresis and charge noise

We characterize InSb quantum dots induced by bottom finger gates within a nanowire that is grown via the vapor-liquid-solid process. The gates are separated from the nanowire by an exfoliated 35\,nm thin hexagonal BN flake. We probe the Coulomb diamonds of the gate induced quantum dot exhibiting charging energies of $\sim 2.5\,\mathrm{meV}$ and orbital excitation energies up to $0.3\,\mathrm{meV}$. The gate hysteresis for sweeps covering 5 Coulomb diamonds reveals an energy hysteresis of only $60\mathrm{μeV}$ between upwards and downwards sweeps. Charge noise is studied via long-term measurements at the slope of a Coulomb peak revealing potential fluctuations of $\sim 1\,μ\mathrm{eV}/\mathrm{\sqrt{Hz}}$ at 1\,Hz. This makes h-BN the dielectric with the currently lowest gate hysteresis and lowest low-frequency potential fluctuations reported for low-gap III-V nanowires. The extracted values are similar to state-of-the art quantum dots within Si/SiGe and Si/SiO${_2}$ systems.

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preprint2020arXiv

Quantum transport in topological surface states of Bi$_2$Te$_3$ nanoribbons

Quasi-1D nanowires of topological insulators are emerging candidate structures in superconductor hybrid architectures for the realization of Majorana fermion based quantum computation schemes. It is however technically difficult to both fabricate as well as identify the 1D limit of topological insulator nanowires. Here, we investigated selectively-grown Bi$_2$Te$_3$ topological insulator nanoribbons and nano Hall bars at cryogenic temperatures for their topological properties. The Hall bars are defined in deep-etched Si$_3$N$_4$/SiO$_2$ nano-trenches on a silicon (111) substrate followed by a selective area growth process via molecular beam epitaxy. The selective area growth is beneficial to the device quality, as no subsequent fabrication needs to be performed to shape the nanoribbons. Transmission line measurements are performed to evaluate contact resistances of Ti/Au contacts applied as well as the specific resistance of the Bi$_2$Te$_3$ binary topological insulator. In the diffusive transport regime of these unintentionally $n$-doped Bi$_2$Te$_3$ topological insulator nano Hall bars, we identify distinguishable electron trajectories by analyzing angle-dependent universal conductance fluctuation spectra. When the sample is tilted from a perpendicular to a parallel magnetic field orientation, these high frequent universal conductance fluctuations merge with low frequent Aharonov-Bohm type oscillations originating from the topologically protected surface states encircling the nanoribbon cross section. For 500 nm wide Hall bars we also identify low frequent Shubnikov-de Haas oscillations in the perpendicular field orientation, that reveal a topological high-mobility 2D transport channel, partially decoupled from the bulk of the material.

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preprint2017arXiv

MBE Growth of Al/InAs and Nb/InAs Superconducting Hybrid Nanowire Structures

We report on \textit{in situ} growth of crystalline Al and Nb shells on InAs nanowires. The nanowires are grown on Si(111) substrates by molecular beam epitaxy (MBE) without foreign catalysts in the vapor-solid mode. The metal shells are deposited by electron-beam evaporation in a metal MBE. High quality supercondonductor/semiconductor hybrid structures such as Al/InAs and Nb/InAs are of interest for ongoing research in the fields of gateable Josephson junctions and quantum information related research. Systematic investigations of the deposition parameters suitable for metal shell growth are conducted. In case of Al, the substrate temperature, the growth rate and the shell thickness are considered. The substrate temperature as well as the angle of the impinging deposition flux are explored for Nb shells. The core-shell hybrid structures are characterized by electron microscopy and x-ray spectroscopy. Our results show that the substrate temperature is a crucial parameter in order to enable the deposition of smooth Al layers. Contrary, Nb films are less dependent on substrate temperature but strongly affected by the deposition angle. At a temperature of 200°C Nb reacts with InAs, dissolving the nanowire crystal. Our investigations result in smooth metal shells exhibiting an impurity and defect free, crystalline superconductor/InAs interface. Additionally, we find that the superconductor crystal structure is not affected by stacking faults present in the InAs nanowires.

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preprint2012arXiv

Scanning tunneling microscopy with InAs nanowire tips

Indium arsenide nanowires grown by selective-area vapor phase epitaxy are used as tips for scanning tunneling microscopy (STM). The STM tips are realized by positioning the wires manually on the corner of a double cleaved gallium arsenide wafer with submicrometer precision and contacting them lithographically, which is fully compatible with further integrated circuitry on the GaAs wafer. STM images show a z-noise of 2 pm and a lateral stability of, at least, 0.5 nm on a Au(111) surface. I(z) spectroscopy reveals an exponential decay indicating tunneling through vacuum. Subsequent electron microscopy images of the tip demonstrate that the wires are barely modified during the STM imaging.

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