Paper detail

Quantum impurity in the bulk of topological insulator

We investigate physical properties of an Anderson impurity embedded in the bulk of a topological insulator. The slave-boson mean-field approximation is used to account for the strong electron correlation at the impurity. Different from the results of a quantum impurity on the surface of a topological insulator, we find for the band-inverted case, a Kondo resonant peak and in-gap bound states can be produced simultaneously. However, only one type of them appears for the normal case. It is shown that the mixed-valence regime is much broader in the band-inverted case, while it shrinks to a very narrow regime in the normal case. Furthermore, a self-screening of the Kondo effect may appear when the interaction between the bound-state spin and impurity spin is taken into account.