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Researcher profile

Hai-Zhou Lu

Hai-Zhou Lu contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.otherphysics.app-ph

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Published work

9 published item(s)

preprint2026arXiv

Linear magnetoresistance of two-dimensional massless Dirac fermions in the quantum limit

Linear magnetoresistance is a hallmark of 3D Weyl metals in the quantum limit. Recently, a pronounced linear magnetoresistance has also been observed in 2D graphene [Xin et al., Nature 616, 270 (2023)]. However, a comprehensive theoretical understanding remains elusive. By employing the self-consistent Born approximation, we derive the analytical expressions for the magnetoresistivity of 2D massless Dirac fermions in the quantum limit. Notably, our result recovers the minimum conductivity in the clean limit and reveals a linear dependence of resistivity on the magnetic field for Gaussian impurity potentials, in quantitative agreement with experiments. These findings shed light on the magnetoresistance behavior of 2D Dirac fermions under ultra-high magnetic fields.

0 citations0 reviewsNo code linkedOpen access
preprint2026arXiv

Quantum Geometric Origin of Orbital Magnetization

The exploration of the Riemannian structure of the Hilbert space has led to the concept of quantum geometry, comprising geometric quantities exemplified by Berry curvature and quantum metric. While this framework has profoundly advanced the understanding of various electronic phenomena, its potential for illuminating magnetic phenomena has remained less explored. In this Perspective, we highlight how quantum geometry paves a new way for understanding magnetization within a single-particle framework. We first elucidate the geometric origin of equilibrium magnetization in the modern theory of magnetization, then discuss the role of quantum geometry in kinetic magnetization, and finally outline promising future directions at the frontier of quantum geometric magnetization.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

All-electrical switching of a topological non-collinear antiferromagnet at room temperature

Non-collinear antiferromagnetic Weyl semimetals, combining the advantages of a zero stray field and ultrafast spin dynamics as well as a large anomalous Hall effect and the chiral anomaly of Weyl fermions, have attracted extensive interests. However, the all-electrical control of such systems at room temperature, a crucial step toward practical applications, has not been reported. Here using a small writing current of around 5*10^{6} A/cm^{2}, we realize the all-electrical current-induced deterministic switching of the non-collinear antiferromagnet Mn3Sn with a strong readout signal at room temperature in the Si/SiO2/Mn3Sn/AlOx structure, without external magnetic field and injected spin current. Our simulations reveal that the switching is originated from the current-induced intrinsic non-collinear spin-orbit torques in Mn3Sn itself. Our findings pave the way for the development of topological antiferromagnetic spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Antisymmetric Seebeck effect in a tilted Weyl semimetal

Tilting the Weyl cone breaks the Lorentz invariance and enriches the Weyl physics. Here, we report the observation of a magnetic-field-antisymmetric Seebeck effect in a tilted Weyl semimetal, Co$_3$Sn$_2$S$_2$. Moreover, it is found that the Seebeck effect and the Nernst effect are antisymmetric in both the in-plane magnetic field and the magnetization. We attribute these exotic effects to the one-dimensional chiral anomaly and phase space correction due to the Berry curvature. The observation is further reproduced by a theoretical calculation, taking into account the orbital magnetization.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Layer Hall effect induced by hidden Berry curvature in antiferromagnetic insulators

The layer Hall effect describes electrons spontaneously deflected to opposite sides at different layers, which has been experimentally reported in the MnBi$_2$Te$_4$ thinfilms under perpendicular electric fields [Gao et al., Nature 595, 521 (2021)]. Here, we reveal a universal origin of the layer Hall effect in terms of the so-called hidden Berry curvature, as well as material design principles. Hence, it gives rise to zero Berry curvature in momentum space but nonzero layer-locked hidden Berry curvature in real space. We show that compared to that of a trivial insulator, the layer Hall effect is significantly enhanced in antiferromagnetic topological insulators. Our universal picture provides a paradigm for revealing the hidden physics as a result of the interplay between the global and local symmetries, and can be generalized in various scenarios.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Analytical solution for the surface states of antiferromagnetic topological insulator MnBi$_2$Te$_4$

Recently, the intrinsic magnetic topological insulator MnBi$_2$Te$_4$ has attracted great attention. It has an out-of-plane antiferromagnetic order, which is believed to open a sizable energy gap in the surface states. This gap, however, was not always observable in the latest angle-resolved photoemission spectroscopy (ARPES) experiments. To address this issue, we analytically derive an effective model for the two-dimensional (2D) surface states by starting from a three-dimensional (3D) Hamiltonian for bulk MnBi$_2$Te$_4$ and taking into account the spatial profile of the bulk magnetization. Our calculations suggest that the diminished surface gap may be caused by a much smaller and more localized intralayer ferromagnetic order. In addition, we calculate the spatial distribution and penetration depth of the surface states, which indicates that the surface states are mainly embedded in the first two septuple layers from the terminating surface. From our analytical results, the influence of the bulk parameters on the surface states can be found explicitly. Furthermore, we derive a $\bf{k}\cdot \bf{p}$ model for MnBi$_2$Te$_4$ thin films and show the oscillation of the Chern number between odd and even septuple layers. Our results will be helpful for the ongoing explorations of the MnBi$_x$Te$_y$ family.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electronic and magnetic properties of the Jahn-Teller active fluoride $\mathrm{NaCrF_{3}}$ from first-principles calculations

In perovskite-type compounds, the interplay of cooperative Jahn-Teller effect, electronic correlations and orbital degree of freedom leads to intriguing properties. $\mathrm{NaCrF_{3}}$ is a newly synthesized Jahn-Teller active fluoroperovskite where the $\mathrm{CrF_{6}^{4-}}$ octahedrons are considerably distorted. Based on the first-principles calculation, we analyze its electronic structure and magnetic properties. Our numerical results show that the $\mathrm{Cr^{2+}}$ ions adopt the high-spin $t_{2g\uparrow}^{3}e_{g\uparrow}^{1}$ configuration with $G$-type orbital ordering. We also estimate the magnetic exchange couplings and find that the in-plane and interplanar nearest-neighbor interactions are ferromagnetic and antiferromagnetic, respectively. The ground state of this material is $A$-type antiferromagnetic, in agreement with the experiments. Reasonable Curie-Weiss and $\mathrm{N\acute{e}el}$ temperatures compared to the experiments are given by mean-field approximation theory. Our results give a complete explanation of its electronic structure, magnetic and orbital order, and help to further comprehend the behaviors of Jahn-Teller active perovskite-type fluoride.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Quantum oscillation beyond the quantum limit in pseudospin Dirac materials

Recently, many unexpected fine structures in electric, magnetic, and thermoelectric responses at extremely magnetic fields in topological materials have attracted tremendous interest. We propose a new mechanism of quantum oscillation beyond the strong-field quantum limit for Dirac fermions. The amplitude of the oscillation is far larger than the usual Shubnikov--de Haas oscillation. The oscillation tends to be periodic in the magnetic field B, instead of 1/B. The period of the oscillation does not depend on the Fermi energy. These behaviors cannot be described by the famous Lifshitz-Kosevich formula. The oscillation arises from a mechanism that we refer to as the inversion of the lowest Landau level, resulted from the competition between the pseudospin Dirac-type Landau levels and real-spin Zeeman spitting beyond the quantum limit. This inversion gives rise to the oscillation of the Fermi energy and conductivity at extremely large magnetic fields. This mechanism will be useful for understanding the unexpected fine structures observed in the strong-field quantum limit in Dirac materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Theory for the negative longitudinal magnetoresistance in the quantum limit of Kramers Weyl semimetals

Negative magnetoresistance is rare in non-magnetic materials. Recently, a negative magnetoresistance has been observed in the quantum limit of $β$-Ag$_2$Se, where only one band of Landau levels is occupied in a strong magnetic field parallel to the applied current. $β$-Ag$_2$Se is a material that host a Kramers Weyl cone with band degeneracy near the Fermi energy. Kramers Weyl cones exist at time-reversal invariant momenta in all symmorphic chiral crystals, and at a subset of these momenta, including the $Γ$ point, in non-symmorphic chiral crystals. Here, we present a theory for the negative magnetoresistance in the quantum limit of Kramers Weyl semimetals. We show that, although there is a band touching similar to those in Weyl semimetals, negative magnetoresistance can exist without a chiral anomaly. We find that it requires screened Coulomb scattering potentials between electrons and impurities, which is naturally the case in $β$-Ag$_2$Se.

0 citations0 reviewsNo code linkedOpen access