Abstract
Transport measurements were made on four-terminal devices fabricated from InSb/Al_xIn_(1-x)Sb quantum well structures at temperatures from 1.5 to 300K. Negative bend resistance, which is characteristic of ballistic transport, was observed in devices of channel widths 0.2 or 0.5 μm. We have improved upon the existing implementations of R-matrix theory in device physics by introducing boundary conditions that dramatically speed convergence. By comparison with R-matrix calculations, we show that the experimental observations are consistent with quantum coherent transport.
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