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The GaAs(0 0 1) surface is observed to evolve from being perfectly flat to a surface half covered with one-monolayer high spontaneously formed GaAs islands. The dynamics of this process are monitored with atomic-scale resolution using scanning tunneling microscopy. Surprisingly, pit formation dominates the early stages of island formation. Insight into the nucleation process is reported.
Transport measurements were made on four-terminal devices fabricated from InSb/Al_xIn_(1-x)Sb quantum well structures at temperatures from 1.5 to 300K. Negative bend resistance, which is characteristic of ballistic transport, was observed in devices of channel widths 0.2 or 0.5 μm. We have improved upon the existing implementations of R-matrix theory in device physics by introducing boundary conditions that dramatically speed convergence. By comparison with R-matrix calculations, we show that the experimental observations are consistent with quantum coherent transport.
A new manifestation of interlayer coherence in strongly polarized double layer quantum Hall systems with total filling factor ν=1 in the presence of a small or zero tunneling is theoretically predicted. It is shown that moving (for small tunneling) and spatially localized (for zero tunneling) stable pseudospin solitons develop which could be interpreted as mobile or static charge-density excitations. The possibility of their experimental observation is also discussed.
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