Abstract
The low temperature longitudinal resistance-per-square Rxx(T) in ungated GaAs/AlGaAs quantum wells of high peak hole mobility 1.7x10^6 cm^2/Vs is metallic for 2D hole density p as low as 3.8x10^9 cm-2. The electronic contribution to the resistance, R_{el}(T), is a nonmonotonic function of T, exhibiting thermal activation, R_{el}(T) ~ exp{-E_a/kT}, for kT<<E_F and a heretofore unnoted decay R_{el}(T) ~ 1/T for k_T>EF. The form of R_{el}(T) is independent of density, indicating a fundamental relationship between the low and high T scattering mechanisms in the metallic state.
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