Magnetization Process of the S=1/2 Heisenberg Antiferromagnet on the Cairo Pentagon Lattice

preprint2014arXivOpen access

Abstract

We study the S=1/2 Heisenberg antiferromagnet on the Cairo pentagon lattice by the numerical-diagonalization method. We tune the ratio of two antiferromagnetic interactions coming from two kinds of inequivalent sites in this lattice, examining the magnetization process of the antiferromagnet; particular attention is given to one-third of the height of the saturation. We find that quantum phase transition occurs at a specific ratio and that a magnetization plateau appears in the vicinity of the transition. The plateau is accompanied by a magnetization jump on one side among the edges due to the spin-flop phenomenon. Which side the jump appears depends on the ratio.

Explore this paper’s authors, topics and related work.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Reviews 0

Write a reviewWrite

No reviews yet.

Discussion 0

Add a commentWrite

No comments yet.