Paper detail

Magnetization Process of the S=1/2 Heisenberg Antiferromagnet on the Cairo Pentagon Lattice

We study the S=1/2 Heisenberg antiferromagnet on the Cairo pentagon lattice by the numerical-diagonalization method. We tune the ratio of two antiferromagnetic interactions coming from two kinds of inequivalent sites in this lattice, examining the magnetization process of the antiferromagnet; particular attention is given to one-third of the height of the saturation. We find that quantum phase transition occurs at a specific ratio and that a magnetization plateau appears in the vicinity of the transition. The plateau is accompanied by a magnetization jump on one side among the edges due to the spin-flop phenomenon. Which side the jump appears depends on the ratio.