Researcher profile

Hechen Ren

Hechen Ren contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2026arXiv

High-Performance KV$_3$Sb$_5$/WSe$_2$ van der Waals Photodetectors

Kagome metals AV$_3$Sb$_5$ (A = K, Rb, Cs) have recently emerged as a promising platform for exploring correlated and topological quantum states, yet their potential for optoelectronic applications remains largely unexplored. Here, we report high-performance photodetectors based on van der Waals KV$_3$Sb$_5$/WSe$_2$ heterojunctions. A high-quality Schottky interface readily forms between KV$_3$Sb$_5$ and WSe$_2$, enabling efficient separation and transport of photoinduced carriers. Under 520 nm illumination, the device achieves an open-circuit voltage up to 0.6 V, a responsivity of 809 mA/W, and a fast response time of 18.3 us. This work demonstrates the promising optoelectronic applications of Kagome metals and highlights the potential of KV$_3$Sb$_5$-based van der Waals heterostructures for high-performance photodetection.

preprint2024arXiv

Superconductivity at Pd/Bi$_2$Se$_3$ Interfaces Due to Self-Formed PdBiSe Interlayers

Understanding the physical and chemical processes at the interface of metals and topological insulators is crucial for developing the next generation of topological quantum devices. Here we report the discovery of robust superconductivity in Pd/Bi$_2$Se$_3$ bilayers fabricated by sputtering Pd on the surface of Bi$_2$Se$_3$. Through transmission electron microscopy measurements, we identify that the observed interfacial superconductivity originates from the diffusion of Pd into Bi$_2$Se$_3$. In the diffusion region, Pd chemically reacts with Bi$_2$Se$_3$ and forms a layer of PdBiSe, a known su-perconductor with a bulk transition temperature of 1.5 K. Our work provides a method for in-troducing superconductivity into Bi$_2$Se$_3$, laying the foundation for developing sophisticated Bi$_2$Se$_3$-based topological devices.