Evolution of Anisotropic In-plane Resistivity with doping level in Ca1−x_{1-x}Nax_xFe2_2As2_2 Single Crystals

preprint2014arXivOpen access

Abstract

We measured the in-plane resistivity anisotropy in the underdoped Ca1−x_{1-x}Nax_xFe2_2As2_2 single crystals. The anisotropy (indicated by ρb−ρaρ_{\rm b} - ρ_{\rm a}) appears below a temperature well above magnetic transition temperature TNT_{\rm N}, being positive (ρb−ρa>0ρ_{\rm b} - ρ_{\rm a} > 0) as x≤x\leq 0.14. With increasing the doping level to xx = 0.19, an intersection between ρbρ_{\rm b} and ρaρ_{\rm a} is observed upon cooling, with ρb−ρa<0ρ_{\rm b} - ρ_{\rm a} < 0 at low-temperature deep inside a magnetically ordered state, while ρb−ρa>0ρ_{\rm b} - ρ_{\rm a}> 0 at high temperature. Subsequently, further increase of hole concentration leads to a negative anisotropy ρb−ρa<0ρ_{\rm b} - ρ_{\rm a} < 0 in the whole temperature range. These results manifest that the anisotropic behavior of resistivity in the magnetically ordered state depends strongly on the competition of the contributions from different mechanisms, and the competition between the two contributions results in a complicated evolution of the anisotropy of in-plane resistivity with doping level.

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