Abstract
Thin films of topological insulator Bi_2Se_3 were deposited directly on insulating ferromagnetic EuS. Unusual negative magnetoresistance was observed near the zero field below the Curie temperature (T_C), resembling the weak localization effect; whereas the usual positive magnetoresistance was recovered above T_C. Such negative magnetoresistance was only observed for Bi_2Se_3 layers thinner than t~4nm, when its top and bottom surfaces are coupled. These results provide evidence for a proximity effect between a topological insulator and an insulating ferromagnet, laying the foundation for future realization of the half-integer quantized anomalous Hall effect in three-dimensional topological insulators.
Connections
Explore this paper’s authors, topics and related work.
Building this map preview
BZPEER is loading the nearby papers, people, topics and institutions for this page.
Reviews 0
Write a review
No reviews yet.
Discussion 0
Add a comment
No comments yet.