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Jinfeng Zhao

Jinfeng Zhao appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

3 published item(s)

preprint2022arXiv

Elastic Valley Spin Controlled Chiral Coupling in Topological Valley Phononic Crystals

Distinct from the phononic valley pseudo-spin, the real physical spin of elastic waves adds a novel tool-kit capable of envisaging the valley-spin physics of topological valley phononic crystals from a local viewpoint. Here, we report the observation of local elastic valley spin as well as the hidden elastic spin-valley locking mechanism overlooked before. We demonstrate that the selective one-way routing of valley phonon states along the topological interface can be reversed by imposing the elastic spin meta-source at different interface locations with opposite valley-spin correspondence. We unveil the physical mechanism of selective directionality as the elastic spin controlled chiral coupling of valley phonon states, through both analytical theory and experimental measurement of the opposite local elastic spin density at different interface locations for different transport directions. The elastic spin of valley topological edge phonons can be extended to other topological states and offers new tool to explore topological metamaterials.

preprint2014arXiv

Pulsed Laser Deposition of High-Quality Thin Films of the Insulating Ferromagnet EuS

High-quality thin films of the ferromagnetic-insulator europium(II) sulfide (EuS) were fabricated by pulsed laser deposition on Al2O3 (0001) and Si (100) substrates. A single orientation was obtained with the [100] planes parallel to the substrates, with atomic-scale smoothness indicates a near-ideal surface topography. The films exhibit uniform ferromagnetism below 15.9 K, with a substantial component of the magnetization perpendicular to the plane of the films. Optimization of the growth condition also yielded truly insulating films with immeasurably large resistance. This combination of magnetic and electric properties open the gate for novel devices that require a true ferromagnetic insulator.

preprint2013arXiv

Emerging Weak Localization Effects on Topological Insulator-Insulating Ferromagnet (Bi_2Se_3-EuS) Interface

Thin films of topological insulator Bi_2Se_3 were deposited directly on insulating ferromagnetic EuS. Unusual negative magnetoresistance was observed near the zero field below the Curie temperature (T_C), resembling the weak localization effect; whereas the usual positive magnetoresistance was recovered above T_C. Such negative magnetoresistance was only observed for Bi_2Se_3 layers thinner than t~4nm, when its top and bottom surfaces are coupled. These results provide evidence for a proximity effect between a topological insulator and an insulating ferromagnet, laying the foundation for future realization of the half-integer quantized anomalous Hall effect in three-dimensional topological insulators.