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Electric Field Control of the Verwey Transition and Induced Magnetoelectric Effect in Magnetite

We incorporate single crystal Fe$_3$O$_4$ thin films into a gated device structure and demonstrate the ability to control the Verwey transition with static electric fields. The Verwey transition temperature ($T_V$) increases for both polarities of the electric field, indicating the effect is not driven by changes in carrier concentration. Energetics of induced electric polarization and/or strain within the Fe$_3$O$_4$ film provide a possible explanation for this behavior. Electric field control of the Verwey transition leads directly to a large magnetoelectric effect with coefficient of 585 pT m/V.

preprint2012arXivOpen access
Jared J. I. WongAdrian G. SwartzRenjing ZhengWei HanRoland K. Kawakami
cond-mat.str-elcond-mat.mtrl-sci
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Jared J. I. WongAdrian G. SwartzRenjing ZhengWei HanRoland K. Kawakami

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