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Roland K. Kawakami

Roland K. Kawakami appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

20 published item(s)

preprint2022arXiv

Atomic Layer Epitaxy of Kagome Magnet Fe${_3}$Sn${_2}$ and Sn-modulated Heterostructures

Magnetic materials with kagome crystal structure exhibit rich physics such as frustrated magnetism, skyrmion formation, topological flat bands, and Dirac/Weyl points. Until recently, most studies on kagome magnets have been performed on bulk crystals or polycrystalline films. Here we report the atomic layer molecular beam epitaxy synthesis of high-quality thin films of topological kagome magnet Fe${_3}$Sn${_2}$. Structural and magnetic characterization of Fe${_3}$Sn${_2}$ on epitaxial Pt(111) identifies highly ordered films with c-plane orientation and an in-plane magnetic easy axis. Studies of the local magnetic structure by anomalous Nernst effect imaging reveals in-plane oriented micrometer size domains. Superlattice structures consisting of Fe${_3}$Sn${_2}$ and Fe${_3}$Sn are also synthesized by atomic layer molecular beam epitaxy, demonstrating the ability to modulate the sample structure at the atomic level. The realization of high-quality films by atomic layer molecular beam epitaxy opens the door to explore the rich physics of this system and investigate novel spintronic phenomena by interfacing Fe${_3}$Sn${_2}$ with other materials.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Kinetically-controlled epitaxial growth of Fe$_3$GeTe$_2$ van der Waals ferromagnetic films

We demonstrate that kinetics play an important role in the epitaxial growth of Fe$_3$GeTe$_2$ (FGT) van der Waals (vdW) ferromagnetic films by molecular beam epitaxy. By varying the deposition rate, we control the formation or suppression of an initial tellurium-deficient non-van der Waals phase (Fe$_3$Ge$_2$) prior to realizing epitaxial growth of the vdW FGT phase. Using cross-sectional scanning transmission electron microscopy and scanning tunneling microscopy, we optimize the FGT films to have atomically smooth surfaces and abrupt interfaces with the Ge(111) substrate. The magnetic properties of our high quality material are confirmed through magneto-optic, magnetotransport, and spin-polarized STM studies. Importantly, this demonstrates how the interplay of energetics and kinetics can help tune the re-evaporation rate of chalcogen atoms and interdiffusion from the underlayer, which paves the way for future studies of van der Waals epitaxy.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Chemical Migration and Dipole Formation at van der Waals Interfaces between Magnetic Transition Metal Chalcogenides and Topological Insulators

Metal and magnetic overlayers alter the surface of the topological insulator (TI) bismuth selenide (Bi$_2$Se$_3$) through proximity effects but also by changing the composition and chemical structure of the Bi$_2$Se$_3$ sub-surface. The interface between Bi$_2$Se$_3$ and Mn metal or manganese selenide was explored using x-ray photoelectron spectroscopy (XPS) revealing chemical and electronic changes at the interface. Depositing Mn metal on Bi$_2$Se$_3$ without an external source of Se shows unexpected bonding within the Mn layer due to Mn-Se bonding as Se diffuses out of the Bi$_2$Se$_3$ layer into the growing Mn film. The Se out-diffusion is further evidenced by changes in Bi core levels within the Bi$_2$Se$_3$ layers indicating primarily Bi-Bi bonding over Bi-Se bonding. No out-diffusion of Se occurred when excess Se is supplied with Mn, indicating the importance of supplying enough chalcogen atoms with deposited metals. However, Bi$_2$Se$_3$ core level photoelectrons exhibited a rigid chemical shift toward higher binding energy after depositing a monolayer of MnSe$_{2-x}$, indicating a dipole within the overlayer. Stoichiometry calculations indicated that the monolayer forms MnSe preferentially over the transition metal dichalcogenide (TMD) phase MnSe$_2$, providing a consistent picture of the dipole formation in which a plane of Se anions sits above Mn cations. This study shows that chemical diffusion and dipole formation are important for Mn-Bi$_2$Se$_3$ and MnSe$_{2-x}$-Bi$_2$Se$_3$ and should be considered carefully for TMD/TI interfaces more generally.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Coherent Growth and Characterization of van der Waals 1T-VSe$_2$ Layers on GaAs(111)B Using Molecular Beam Epitaxy

We report epitaxial growth of vanadium diselenide (VSe$_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structural and chemical studies using by x-ray diffraction, transmission electron microscopy, scanning tunneling microscopy and x-ray photoelectron spectroscopy indicate high quality thin films. Further studies show that monolayer VSe$_2$ films on GaAs are not air-stable and are susceptible to oxidation within a matter of hours, which indicates that a protective capping layer should be employed for device applications. This work demonstrates that VSe$_2$, a candidate van der Waals material for possible spintronic and electronic applications, can be integrated with III-V semiconductors via epitaxial growth for 2D/3D hybrid devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Spatially Resolved Electronic Properties of Single-Layer WS$_2$ on Transition Metal Oxides

There is a substantial interest in the heterostructures of semiconducting transition metal dichalcogenides (TMDCs) amongst each other or with arbitrary materials, through which the control of the chemical, structural, electronic, spintronic, and optical properties can lead to a change in device paradigms. A critical need is to understand the interface between TMDCs and insulating substrates, for example high-$κ$ dielectrics, which can strongly impact the electronic properties such as the optical gap. Here we show that the chemical and electronic properties of the single-layer (SL) TMDC, WS$_2$, can be transferred onto high-$κ$ transition metal oxide substrates TiO$_2$ and SrTiO$_3$. The resulting samples are much more suitable for measuring their electronic and chemical structures with angle-resolved photoemission than their native-grown SiO$_2$ substrates. We probe the WS$_2$ on the micron scale across 100-micron flakes, and find that the occupied electronic structure is exactly as predicted for freestanding SL WS$_2$ with a strong spin-orbit splitting of 420~meV and a direct band gap at the valence band maximum. Our results suggest that TMDCs can be combined with arbitrary multi-functional oxides, which may introduce alternative means of controlling the optoelectronic properties of such materials.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

The Effect of Preparation Conditions on Raman and Photoluminescence of Monolayer WS2

We report on preparation dependent properties observed in monolayer WS2 samples synthesized via chemical vapor deposition (CVD) on a variety of common substrates (Si/SiO2, sapphire, fused silica) as well as samples that were transferred from the growth substrate onto a new substrate. The as-grown CVD materials (as-WS2) exhibit distinctly different optical properties than transferred WS2 (x-WS2). In the case of CVD growth on Si/SiO2, following transfer to fresh Si/SiO2 there is a ~50 meV shift of the ground state exciton to higher emission energy in both photoluminescence emission and optical reflection. This shift is indicative of a reduction in tensile strain by ~0.25%. Additionally, the excitonic state in x-WS2 is easily modulated between neutral and charged exciton by exposure to moderate laser power, while such optical control is absent in as-WS2 for all growth substrates investigated. Finally, we observe dramatically different laser power-dependent behavior for as-grown and transferred WS2. These results demonstrate a strong sensitivity to sample preparation that is important for both a fundamental understanding of these novel materials as well as reliable reproduction of device properties.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Correlating spin transport and electrode magnetization in a graphene spin valve: simultaneous magnetic microscopy and non-local measurements

Using simultaneous magnetic force microscopy (MFM) and transport measurements of a graphene spin valve, we correlate the non-local spin signal with the magnetization of the device electrodes. The imaged magnetization states corroborate the influence of each electrode within a one-dimensional spin transport model and provide evidence linking domain wall pinning to additional features in the transport signal.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Experimental Demonstration of XOR Operation in Graphene Magnetologic Gates at Room Temperature

We report the experimental demonstration of a magnetologic gate built on graphene at room temperature. This magnetologic gate consists of three ferromagnetic electrodes contacting a single layer graphene spin channel and relies on spin injection and spin transport in the graphene. We utilize electrical bias tuning of spin injection to balance the inputs and achieve "exclusive or" (XOR) logic operation. Furthermore, simulation of the device performance shows that substantial improvement towards spintronic applications can be achieved by optimizing device parameters such as device dimensions. This advance holds promise as a basic building block for spin-based information processing.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Graphene Spintronics

The isolation of graphene has triggered an avalanche of studies into the spin-dependent physical properties of this material, as well as graphene-based spintronic devices. Here we review the experimental and theoretical state-of-art concerning spin injection and transport, defect-induced magnetic moments, spin-orbit coupling and spin relaxation in graphene. Future research in graphene spintronics will need to address the development of applications such as spin transistors and spin logic devices, as well as exotic physical properties including topological states and proximity-induced phenomena in graphene and other 2D materials.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Observing Atomic Collapse Resonances in Artificial Nuclei on Graphene

Relativistic quantum mechanics predicts that when the charge of a superheavy atomic nucleus surpasses a certain threshold, the resulting strong Coulomb field causes an unusual atomic collapse state; this state exhibits an electron wave function component that falls toward the nucleus, as well as a positron component that escapes to infinity. In graphene, where charge carriers behave as massless relativistic particles, it has been predicted that highly charged impurities should exhibit resonances corresponding to these atomic collapse states. We have observed the formation of such resonances around artificial nuclei (clusters of charged calcium dimers) fabricated on gated graphene devices via atomic manipulation with a scanning tunneling microscope. The energy and spatial dependence of the atomic collapse state measured with scanning tunneling microscopy revealed unexpected behavior when occupied by electrons.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Spin Amplification by Controlled Symmetry Breaking for Spin-Based Logic

Spin amplification is one of the most critical challenges for spintronics and spin-based logic in order to achieve spintronic circuits with fan-out. We propose a new concept for spin amplification that will allow a small spin current in a non-magnetic spin channel to control the magnetization of an attached ferromagnet. The key step is to bring the ferromagnet into an unstable symmetric state (USS), so that a small spin transfer torque from a small spin current can provide a magnetic bias to control the spontaneous symmetry breaking and select the final magnetization direction of the ferromagnet. Two proposed methods for achieving the USS configuration are voltage-controlled Curie temperature (VC-TC) and voltage-controlled magnetic anisotropy (VC-MA). We believe the development of new 2D magnetic materials with greater tunability of VC-TC and VC-MA will be needed for practical applications. A successful realization of spin amplification by controlled symmetry breaking will be important for the implementation of existing spin-logic proposals (e.g. "All Spin Logic") and could inspire alternative ideas for spintronic circuits and devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Effect of in-situ deposition of Mg adatoms on spin relaxation in graphene

We have systematically introduced charged impurity scatterers in the form of Mg adsorbates to exfoliated single layer graphene and observe little variation of the spin relaxation times despite pronounced changes in the charge transport behavior. All measurements are performed on non-local graphene tunneling spin valves exposed in-situ to Mg adatoms, thus systematically introducing atomic-scale charged impurity scattering. While charge transport properties exhibit decreased mobility and decreased momentum scattering times, the observed spin lifetimes are not significantly affected indicating that charged impurity scattering is inconsequential in the present regime of spin relaxation times.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Epitaxial Co-Deposition Growth of CaGe2 Films by Molecular Beam Epitaxy for Large Area Germanane

Two-dimensional crystals are an important class of materials for novel physics, chemistry, and engineering. Germanane (GeH), the germanium-based analogue of graphane (CH), is of particular interest due to its direct band gap and spin-orbit coupling. Here, we report the successful co-deposition growth of CaGe2 films on Ge(111) substrates by molecular beam epitaxy (MBE) and their subsequent conversion to germanane by immersion in hydrochloric acid. We find that the growth of CaGe2 occurs within an adsorption-limited growth regime, which ensures stoichiometry of the film. We utilize in situ reflection high energy electron diffraction (RHEED) to explore the growth temperature window and find the best RHEED patterns at 750 °C. Finally, the CaGe2 films are immersed in hydrochloric acid to convert the films to germanane. Auger electron spectroscopy of the resulting film indicates the removal of Ca and RHEED patterns indicate a single-crystal film with in-plane orientation dictated by the underlying Ge(111) substrate. X-ray diffraction and Raman spectroscopy indicate that the resulting films are indeed germanane. Ex situ atomic force microscopy (AFM) shows that the grain size of the germanane is on the order of a few micrometers, being primarily limited by terraces induced by the miscut of the Ge substrate. Thus, optimization of the substrate could lead to the long-term goal of large area germanane films.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Integrating MBE materials with graphene to induce novel spin-based phenomena

Magnetism in graphene is an emerging field that has received much theoretical attention. In particular, there have been exciting predictions for induced magnetism through proximity to a ferromagnetic insulator as well as through localized dopants and defects. Here, we discuss our experimental work using molecular beam epitaxy (MBE) to modify the surface of graphene and induce novel spin-dependent phenomena. First, we investigate the epitaxial growth the ferromagnetic insulator EuO on graphene and discuss possible scenarios for realizing exchange splitting and exchange fields by ferromagnetic insulators. Second, we investigate the properties of magnetic moments in graphene originating from localized p_z-orbital defects (i.e. adsorbed hydrogen atoms). The behavior of these magnetic moments is studied using non-local spin transport to directly probe the spin-degree of freedom of the defect-induced states. We also report the presence of enhanced electron g-factors caused by the exchange fields present in the system. Importantly, the exchange field is found to be highly gate dependent, with decreasing g-factors with increasing carrier densities.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Integration of the Ferromagnetic Insulator EuO onto Graphene

We have demonstrated the deposition of EuO films on graphene by reactive molecular beam epitaxy in a special adsorption-controlled and oxygen-limited regime, which is a critical advance toward the realization of the exchange proximity interaction (EPI). It has been predicted that when the ferromagnetic insulator (FMI) EuO is brought into contact with graphene, an overlap of electronic wavefunctions at the FMI/graphene interface can induce a large spin splitting inside the graphene. Experimental realization of this effect could lead to new routes for spin manipulation, which is a necessary requirement for a functional spin transistor. Furthermore, EPI could lead to novel spintronic behavior such as controllable magnetoresistance, gate tunable exchange bias, and quantized anomalous Hall effect. However, experimentally, EuO has not yet been integrated onto graphene. Here we report the successful growth of high quality crystalline EuO on highly-oriented pyrolytic graphite (HOPG) and single-layer graphene. The epitaxial EuO layers have (001) orientation and do not induce an observable D peak (defect) in the Raman spectra. Magneto-optic measurements indicate ferromagnetism with Curie temperature of 69 K, which is the value for bulk EuO. Transport measurements on exfoliated graphene before and after EuO deposition indicate only a slight decrease in mobility.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Electric Field Control of the Verwey Transition and Induced Magnetoelectric Effect in Magnetite

We incorporate single crystal Fe$_3$O$_4$ thin films into a gated device structure and demonstrate the ability to control the Verwey transition with static electric fields. The Verwey transition temperature ($T_V$) increases for both polarities of the electric field, indicating the effect is not driven by changes in carrier concentration. Energetics of induced electric polarization and/or strain within the Fe$_3$O$_4$ film provide a possible explanation for this behavior. Electric field control of the Verwey transition leads directly to a large magnetoelectric effect with coefficient of 585 pT m/V.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Magnetic Moment Formation in Graphene Detected by Scattering of Pure Spin Currents

Hydrogen adatoms are shown to generate magnetic moments inside single layer graphene. Spin transport measurements on graphene spin valves exhibit a dip in the non-local spin signal as a function of applied magnetic field, which is due to scattering (relaxation) of pure spin currents by exchange coupling to the magnetic moments. Furthermore, Hanle spin precession measurements indicate the presence of an exchange field generated by the magnetic moments. The entire experiment including spin transport is performed in an ultrahigh vacuum chamber, and the characteristic signatures of magnetic moment formation appear only after hydrogen adatoms are introduced. Lattice vacancies also demonstrate similar behavior indicating that the magnetic moment formation originates from pz-orbital defects.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Spin Relaxation in Single Layer Graphene with Tunable Mobility

Graphene is an attractive material for spintronics due to theoretical predictions of long spin lifetimes arising from low spin-orbit and hyperfine couplings. In experiments, however, spin lifetimes in single layer graphene (SLG) measured via Hanle effects are much shorter than expected theoretically. Thus, the origin of spin relaxation in SLG is a major issue for graphene spintronics. Despite extensive theoretical and experimental work addressing this question, there is still little clarity on the microscopic origin of spin relaxation. By using organic ligand-bound nanoparticles as charge reservoirs to tune mobility between 2700 and 12000 cm2/Vs, we successfully isolate the effect of charged impurity scattering on spin relaxation in SLG. Our results demonstrate that while charged impurities can greatly affect mobility, the spin lifetimes are not affected by charged impurity scattering.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Spin Relaxation in Single Layer and Bilayer Graphene

We investigate spin relaxation in graphene spin valves and observe strongly contrasting behavior for single layer graphene (SLG) and bilayer graphene (BLG). In SLG, the spin lifetime (τs) varies linearly with the momentum scattering time (τp) as carrier concentration is varied, indicating the dominance of Elliot-Yafet (EY) spin relaxation at low temperatures. In BLG, τs and τp exhibit an inverse dependence, which indicates the dominance of Dyakonov-Perel spin relaxation at low temperatures. The different behavior is due to enhanced screening and/or reduced surface sensitivity of BLG, which greatly reduces the impurity-induced EY spin relaxation.

0 citations0 reviewsNo code linkedOpen access