Researcher profile

Bryan A. Myers

Bryan A. Myers contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2014arXiv

Probing surface noise with depth-calibrated spins in diamond

Sensitive nanoscale magnetic resonance imaging (MRI) of target spins using nitrogen-vacancy (NV) centers in diamond will require a quantitative understanding of dominant noise at the surface. We probe this noise by applying dynamical decoupling to shallow NVs at calibrated depths. Results support a model of NV dephasing by a surface bath of electronic spins having a correlation rate of 200 kHz, much faster than that of the bulk N spin bath. Our method of combining nitrogen delta-doping growth and nanoscale depth imaging paves a way for studying spin noise present in diverse material surfaces.

preprint2014arXiv

Two-dimensional nanoscale imaging of gadolinium spins via scanning probe relaxometry with a single spin in diamond

Spin-labeling of molecules with paramagnetic ions is an important approach for determining molecular structure, however current ensemble techniques lack the sensitivity to detect few isolated spins. In this Letter, we demonstrate two-dimensional nanoscale imaging of paramagnetic gadolinium compounds using scanning relaxometry of a single nitrogen vacancy (NV) center in diamond. Gadopentetate dimeglumine attached to an atomic force microscope tip is controllably interacted with and detected by the NV center, by virtue of the fact that the NV exhibits fast relaxation in the fluctuating magnetic field generated by electron spin flips in the gadolinium. Using this technique, we demonstrate a reduction in the $T_1$ relaxation time of the NV center by over two orders of magnitude, probed with a spatial resolution of 20 nm. Our result exhibits the viability of the technique for imaging individual spins attached to complex nanostructures or biomolecules, along with studying the magnetic dynamics of isolated spins.

preprint2012arXiv

Engineering shallow spins in diamond with nitrogen delta-doping

We demonstrate nanometer-precision depth control of nitrogen-vacancy (NV) center creation near the surface of synthetic diamond using an in situ nitrogen delta-doping technique during plasma-enhanced chemical vapor deposition. Despite their proximity to the surface, doped NV centers with depths (d) ranging from 5 - 100 nm display long spin coherence times, T2 > 100 \mus at d = 5 nm and T2 > 600 \mus at d \geq 50 nm. The consistently long spin coherence observed in such shallow NV centers enables applications such as atomic-scale external spin sensing and hybrid quantum architectures.