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Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking

This paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and 200 GeV pions. We report results on charge collection, particle detection efficiency and single point resolution.

preprint2011arXivOpen access
Marco BattagliaDario BiselloDevis ContaratoPeter DenesPiero GiubilatoSerena MattiazzoDevis PantanoSarah Zalusky
physics.ins-det
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Open access8 authors1 topic
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Marco BattagliaDario BiselloDevis ContaratoPeter DenesPiero GiubilatoSerena MattiazzoDevis PantanoSarah Zalusky

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