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S. Tatarenko

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.dis-nn cond-mat.str-el

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preprint2016arXiv

Diffusion-driven growth of nanowires by low-temperature molecular beam epitaxy

With ZnTe as an example, we use two different methods to unravel the characteristics of the growth of nanowires by gold-catalyzed molecular beam epitaxy at low temperature. In the first approach, CdTe insertions have been used as markers, and the nanowires have been characterized by scanning transmission electron microscopy, including geometrical phase analysis, and energy dispersive electron spectrometry; the second approach uses scanning electron microscopy and the statistics of the relationship between the length of the tapered nanowires and their base diameter. Axial and radial growth are quantified using a diffusion-limited model adapted to the growth conditions; analytical expressions describe well the relationship between the NW length and the total molecular flux (taking into account the orientation of the effusion cells), and the catalyst-nanowire contact area. A long incubation time is observed. This analysis allows us to assess the evolution of the diffusion lengths on the substrate and along the nanowire sidewalls, as a function of temperature and deviation from stoichiometric flux.

preprint2013arXiv

Influence of free carriers on exciton ground states in quantum wells

The influence of free carriers on the ground state of the exciton at zero magnetic field in a quasi-two-dimensional quantum well doped with electrons is considered in the framework of the random phase approximation. The effects of the exciton-charge-density interaction and the inelastic scattering processes due to the Hartree-Fock electron-electron exchange interaction are taken into account. The effect of phase-space filling is considered using an approximate approach. The results of the calculation are compared with the experimental data available.

preprint2011arXiv

Exciton-phonon coupling efficiency in CdSe quantum dots embedded in ZnSe nanowires

Exciton luminescence of a CdSe quantum dot (QD) inserted in a ZnSe nanowire is strongly influenced by the dark exciton states. Because of the small size of these QDs (2-5nm), exchange interaction between hole and electron is highly enhanced and we measured large energy splitting between bright and dark exciton states ($ΔE\in [4, 9.2 ]$ meV) and large spin flip rates between these states. Statistics on many QDs showed that this splitting depends on the QD size. Moreover, we measured an increase of the spin flip rate to the dark states with increasing energy splitting. We explain this observation with a model taking into account the fact that the exciton-phonon interaction depends on the bright to dark exciton energy splitting as well as on the size and shape of the exciton wave function. It also has consequences on the exciton line intensity at high temperature.

preprint2011arXiv

Subnanosecond spectral diffusion of a single quantum dot in a nanowire

We have studied spectral diffusion of the photoluminescence of a single CdSe quantum dot inserted in a ZnSe nanowire. We have measured the characteristic diffusion time as a function of pumping power and temperature using a recently developed technique [G. Sallen et al, Nature Photon. \textbf{4}, 696 (2010)] that offers subnanosecond resolution. These data are consistent with a model where only a \emph{single} carrier wanders around in traps located in the vicinity of the quantum dot.

preprint2004arXiv

Photoluminescence of p-doped quantum wells with strong spin splitting

The spectroscopic properties of a spin polarized two-dimensional hole gas are studied in modulation doped (Cd,Mn)Te quantum wells. The giant Zeeman effect induces a significant spin splitting even at very small values of the applied field. Several methods of measuring the carrier density (Hall effect, filling factors of the Landau levels at high field, various manifestations of Moss-Burstein shifts) are described and calibrated. The value of the spin splitting needed to fully polarize the hole gas, evidences a strong enhancement of the spin susceptibility of the hole gas due to carrier-carrier interaction. At small values of the spin splitting, whatever the carrier density (non zero) is, photoluminescence lines are due to the formation of charged excitons in the singlet state. Spectral shifts in photoluminescence and in transmission (including an "excitonic Moss-Bustein shift") are observed and discussed in terms of excitations of the partially or fully polarized hole gas. At large spin splitting, and without changing the carrier density, the singlet state of the charged exciton is destabilized in favour of a triplet state configuration of holes. The binding energy of the singlet state is thus measured and found to be independent of the carrier density (in contrast with the splitting between the charged exciton and the neutral exciton lines). The state stable at large spin splitting is close to the neutral exciton at low carrier density, and close to an uncorrelated electron-hole pair at the largest values of the carrier density achieved. The triplet state gives rise to a characteristic double-line structure with an indirect transition to the ground state (with a strong phonon replica) and a direct transition to an excited state of the hole gas.

preprint2003arXiv

Femtosecond study of the interplay between excitons, trions, and carriers in (Cd,Mn)Te quantum wells

We present an absorption study of the neutral and positively charged exciton (trion) under the influence of a femtosecond, circularly polarized, resonant pump pulse. Three populations are involved: free holes, excitons, and trions, all exhibiting transient spin polarization. In particular, a polarization of the hole gas is created by the formation of trions. The evolution of these populations is studied, including the spin flip and trion formation processes. The contributions of several mechanisms to intensity changes are evaluated, including phase space filling and spin-dependent screening. We propose a new explanation of the oscillator strength stealing phenomena observed in p-doped quantum wells, based on the screening of neutral excitons by charge carriers. We have also found that binding heavy holes into charged excitons excludes them from the interaction with the rest of the system, so that oscillator strength stealing is partially blocked

preprint2000arXiv

Carrier-induced ferromagnetism in p-Zn1-xMnxTe

We present a systematic study of the ferromagnetic transition induced by the holes in nitrogen doped Zn1-xMnxTe epitaxial layers, with particular emphasis on the values of the Curie-Weiss temperature as a function of the carrier and spin concentrations. The data are obtained from thorough analyses of the results of magnetization, magnetoresistance and spin-dependent Hall effect measurements. The experimental findings compare favorably, without adjustable parameters, with the prediction of the Rudermann-Kittel-Kasuya-Yosida (RKKY) model or its continuous-medium limit, that is, the Zener model, provided that the presence of the competing antiferromagnetic spin-spin superexchange interaction is taken into account, and the complex structure of the valence band is properly incorporated into the calculation of the spin susceptibility of the hole liquid. In general terms, the findings demonstrate how the interplay between the ferromagnetic RKKY interaction, carrier localization, and intrinsic antiferromagnetic superexchange affects the ordering temperature and the saturation value of magnetization in magnetically and electrostatically disordered systems.

preprint1999arXiv

Carrier induced ferromagnetic interactions in p-doped Zn(1-x)MnxTe epilayers

p-type doping of molecular-beam-epitaxy grown layers of the diluted magnetic semiconductor Zn(1-x)MnxTe is achieved by using an active nitrogen cell. The strong interaction between the localized Mn spins and the holes deeply modifies the transport properties (metal-insulator transition, spin-dependent Hall effect). In spite of the weak localization of the carriers at low temperature, the holes clearly induce a ferromagnetic interaction between the localized spins, which is discussed as a function of Mn content and hole concentration.