Researcher profile

C. Gerl

C. Gerl contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.mtrl-sci quant-ph

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preprint2010arXiv

Engineering ultralong spin coherence in two-dimensional hole systems at low temperatures

For the realisation of scalable solid-state quantum-bit systems, spins in semiconductor quantum dots are promising candidates. A key requirement for quantum logic operations is a sufficiently long coherence time of the spin system. Recently, hole spins in III-V-based quantum dots were discussed as alternatives to electron spins, since the hole spin, in contrast to the electron spin, is not affected by contact hyperfine interaction with the nuclear spins. Here, we report a breakthrough in the spin coherence times of hole ensembles, confined in so called natural quantum dots, in narrow GaAs/AlGaAs quantum wells at temperatures below 500 mK. Consistently, time-resolved Faraday rotation and resonant spin amplification techniques deliver hole-spin coherence times, which approach in the low magnetic field limit values above 70 ns. The optical initialisation of the hole spin polarisation, as well as the interconnected electron and hole spin dynamics in our samples are well reproduced using a rate equation model.

preprint2010arXiv

Nonlinear growth with the microwave intensity in radiation-induced magnetoresistance oscillations

We report the observation of inverse-magnetic-field-periodic, radiation-induced magnetoresistance oscillations in GaAs/AlGaAs heterostructures prepared in W. Wegscheider's group, compare their characteristics with similar oscillations in V. Umansky's material, and describe the lineshape variation vs. the radiation power, $P$, in the two systems. We find that the radiation-induced oscillatory $ΔR_{xx}$, in both materials, can be described by $ΔR_{xx} = -A exp(-λ/B)sin(2 πF/B)$, where $A$ is the amplitude, $λ$ is the damping parameter, and $F$ is the oscillation frequency. Both $λ$ and $F$ turn out to be insensitive to $P$. On the other hand, $A$ grows nonlinearly with $P$.

preprint2005arXiv

Carbon-doped high mobility two-dimensional hole gases on (110) faced GaAs

Carbon-doped high mobility two-dimensional hole gases grown on (110) oriented GaAs substrates have been grown with hole mobilities exceeding 10^6 cm^2/Vs in single heterojunction GaAs/AlGaAs structures. At these high mobilities, a pronounced mobility anisotropy has been observed. Rashba induced spin-splitting in these asymmetric structures has been found to be independent on the transport direction.