Abstract

We find that the Hall effect resistivity (ρxyρ_{xy}) of thin films of \lsmo\ varies as a function of the angle θθ between the applied magnetic field and the film normal as ρxy=acos⁡θ+bcos⁡3θρ_{xy}=a\cos θ+ b\cos 3θ, where ∣b∣|b| increases with increasing temperature and decreases with increasing magnetic field. We find that the angular dependence of the longitudinal resistivity and the magnetization cannot fully explain the surprising term bb, suggesting it is a manifestation of an intrinsic transport property.

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