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Hesameddin Ilatikhameneh
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Hesameddin Ilatikhameneh13 visible / 13 total nodes / 12 links

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AuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipAuthorshipHesameddin IlatikhamenehAHesameddin IlatikhamenehResearcherScaling Theory of Electrically Doped 2D TransistorsWScaling Theory of Elect...preprint / 2015Dielectric Engineered Tunnel Field-Effect TransistorWDielectric Engineered T...preprint / 2015Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide MaterialsWTunnel Field-Effect Tra...preprint / 2015Can Tunnel Transistors Scale Below 10nm?WCan Tunnel Transistors ...preprint / 2015From Fowler-Nordheim to Non-Equilibrium Green's Function Modeling of TunnelingWFrom Fowler-Nordheim to...preprint / 2015Saving Moore's Law Down To 1nm Channels With Anisotropic Effective MassWSaving Moore's Law Down...preprint / 2016Universal Behavior of Strain in Quantum DotsWUniversal Behavior of S...preprint / 2015Design Rules for High Performance Tunnel Transistors from 2D MaterialsWDesign Rules for High P...preprint / 2016Simulation and optimization of HEMTsWSimulation and optimiza...preprint / 2016Impact of Dimensionality on PN JunctionsWImpact of Dimensionalit...preprint / 2016Quantum-Kit: Simulating Shor's Factorization of 24-Bit Number on DesktopWQuantum-Kit: Simulating...preprint / 2020Impact of body thickness and scattering on III-V triple heterojunction Fin-TFET modeled with atomistic mode space approximationWImpact of body thicknes...preprint / 2020
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Hesameddin Ilatikhameneh

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PaperScaling Theory of Electrically Doped 2D TransistorsAuthorship / preprint / 2015PaperDielectric Engineered Tunnel Field-Effect TransistorAuthorship / preprint / 2015PaperTunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide MaterialsAuthorship / preprint / 2015PaperCan Tunnel Transistors Scale Below 10nm?Authorship / preprint / 2015PaperFrom Fowler-Nordheim to Non-Equilibrium Green's Function Modeling of TunnelingAuthorship / preprint / 2015PaperSaving Moore's Law Down To 1nm Channels With Anisotropic Effective MassAuthorship / preprint / 2016PaperUniversal Behavior of Strain in Quantum DotsAuthorship / preprint / 2015PaperDesign Rules for High Performance Tunnel Transistors from 2D MaterialsAuthorship / preprint / 2016

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