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Hesameddin Ilatikhameneh

Hesameddin Ilatikhameneh appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-phphysics.comp-phquant-ph

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Published work

18 published item(s)

preprint2020arXiv

Impact of body thickness and scattering on III-V triple heterojunction Fin-TFET modeled with atomistic mode space approximation

The triple heterojunction TFET has been originally proposed to resolve TFET's low ON-current challenge. The carrier transport in such devices is complicated due to the presence of quantum wells and strong scattering. Hence, the full band atomistic NEGF approach, including scattering, is required to model the carrier transport accurately. However, such simulations for devices with realistic dimensions are computationally unfeasible. To mitigate this issue, we have employed the empirical tight-binding mode space approximation to simulate triple heterojunction TFETs with the body thickness up to 12 nm. The triple heterojunction TFET design is optimized using the model to achieve a sub-60mV/dec transfer characteristic under realistic scattering conditions.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Quantum-Kit: Simulating Shor's Factorization of 24-Bit Number on Desktop

Quantum-Kit is a graphical desktop application for quantum circuit simulations. Its powerful, memory-efficient computational engine enables large-scale simulations on a desktop. The ability to design hybrid circuits, with both quantum and classical bits and controls, is employed to demonstrate Kitaev's approach to Shor's factorization algorithm. For the first time, Shor's factorization of a 24-bit integer is simulated with Quantum-Kit in a mere 26 minutes on a modest desktop with Intel Core i5 7400T, 2.4GHz and12GB RAM. While the largest number factorized so far has been a 20-bit integer, requiring 60 qubits and a supercomputer, the hybrid circuit functionality allows the same number to be factorized using Kitaev's trick with only 21 qubits, in 2.3 minutes, on a desktop. Furthermore, conventional Shor's algorithm for a 13-bitinteger with 39 qubits is shown to be 35x faster with Quantum-Kit.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET

A bilayer graphene based electrostatically doped tunnel field-effect transistor (BED-TFET) is proposed in this work. Unlike graphene nanoribbon TFETs in which the edge states deteriorate the OFF-state performance, BED-TFETs operate based on different bandgaps induced by vertical electric fields in the source, channel, and drain regions without any chemical doping. The performance of the transistor is evaluated by self-consistent quantum transport simulations. This device has several advantages: 1) ultra-low power (VDD=0.1V), 2) high performance (ION/IOFF>104), 3) steep subthreshold swing (SS<10mv/dec), and 4) electrically configurable between N-TFET and P-TFET post fabrication. Here, the operation principle of the BED-TFET and its performance sensitivity to the device design parameters are studied.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Design Rules for High Performance Tunnel Transistors from 2D Materials

Tunneling field-effect transistors (TFETs) based on 2D materials are promising steep sub-threshold swing (SS) devices due to their tight gate control. There are two major methods to create the tunnel junction in these 2D TFETs: electrical and chemical doping. In this work, design guidelines for both electrically and chemically doped 2D TFETs are provided using full band atomistic quantum transport simulations in conjunction with analytic modeling. Moreover, several 2D TFETs' performance boosters such as strain, source doping, and equivalent oxide thickness (EOT) are studied. Later on, these performance boosters are analyzed within a novel figure-of-merit plot (i.e. constant ON-current plot).

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Impact of Dimensionality on PN Junctions

Low dimensional material systems provide a unique set of properties useful for solid-state devices. The building block of these devices is the PN junction. In this work, we present a dramatic difference in the electrostatics of PN junctions in lower dimensional systems, as against the well understood three dimensional systems. Reducing the dimensionality increases the fringing fields and depletion width significantly. We propose a novel method to derive analytic equations in 2D and 1D that considers the impact of neutral regions. The analytical results show an excellent match with both the experimental measurements and numerical simulations. The square root dependence of the depletion width on the ratio of dielectric constant and doping in 3D changes to a linear and exponential dependence for 2D and 1D respectively. This higher sensitivity of 1D PN junctions to its control parameters can be used towards new sensors.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Saving Moore's Law Down To 1nm Channels With Anisotropic Effective Mass

Scaling transistors' dimensions has been the thrust for the semiconductor industry in the last 4 decades. However, scaling channel lengths beyond 10 nm has become exceptionally challenging due to the direct tunneling between source and drain which degrades gate control, switching functionality, and worsens power dissipation. Fortunately, the emergence of novel classes of materials with exotic properties in recent times has opened up new avenues in device design. Here, we show that by using channel materials with an anisotropic effective mass, the channel can be scaled down to 1nm and still provide an excellent switching performance in both MOSFETs and TFETs. In the case of TFETs, a novel design has been proposed to take advantage of anisotropic mass in both ON- and OFF-state of the TFETs. Full-band atomistic quantum transport simulations of phosphorene nanoribbon MOSFETs and TFETs based on the new design have been performed as a proof.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Simulation and optimization of HEMTs

We have developed a simulation system for nanoscale high-electron mobility transistors, in which the self-consistent solution of Poisson and Schrödinger equations is obtained with the finite element method. We solve the exact set of nonlinear differential equations to obtain electron wave function, electric potential distribution, electron density, Fermi surface energy and current density distribution in the whole body of the device. For more precision, local dependence of carrier mobility on the electric field distribution is considered. We furthermore compare the simulation to a recent experimental measurement and observe perfect agreement. We also propose a graded channel design to improve the transconductance and thereby the threshold frequency of the device.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

A Predictive Analytic Model for High-Performance Tunneling-Field Effect Transistors Approaching Non-Equilibrium Green's Function Simulations

A new compact modeling approach is presented which describes the full current-voltage (I-V) characteristic of high-performance (aggressively scaled-down) tunneling field-effect-transistors (TFETs) based on homojunction direct-bandgap semiconductors. The model is based on an analytic description of two key features, which capture the main physical phenomena related to TFETs: 1) the potential profile from source to channel, and 2) the elliptic curvature of the complex bands in the bandgap region. It is proposed to use 1D Poisson's equations in the source and the channel to describe the potential profile in homojunction TFETs. This allows to quantify the impact of source/drain doping on device performance, an aspect usually ignored in TFET modeling but highly relevant in ultra-scaled devices. The compact model is validated by comparison with state-of-the-art quantum transport simulations using a 3D full band atomistic approach based on Non-Equilibrium Green's Functions (NEGF). It is shown that the model reproduces with good accuracy the data obtained from the simulations in all regions of operation: the on/off states and the n/p branches of conduction. This approach allows calculation of energy-dependent band-toband tunneling currents in TFETs, a feature that allows gaining deep insights into the underlying device physics. The simplicity and accuracy of the approach provides a powerful tool to explore in a quantitatively manner how a wide variety of parameters (material-, size- and/or geometrydependent) impact the TFET performance under any bias conditions. The proposed model presents thus a practical complement to computationally expensive simulations such as the 3D NEGF approach.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Can Tunnel Transistors Scale Below 10nm?

The main promise of tunnel FETs (TFETs) is to enable supply voltage ($V_{DD}$) scaling in conjunction with dimension scaling of transistors to reduce power consumption. However, reducing $V_{DD}$ and channel length ($L_{ch}$) typically deteriorates the ON- and OFF-state performance of TFETs, respectively. Accordingly, there is not yet any report of a high perfor]mance TFET with both low V$_{DD}$ ($\sim$0.2V) and small $L_{ch}$ ($\sim$6nm). In this work, it is shown that scaling TFETs in general requires scaling down the bandgap $E_g$ and scaling up the effective mass $m^*$ for high performance. Quantitatively, a channel material with an optimized bandgap ($E_g\sim1.2qV_{DD} [eV]$) and an engineered effective mass ($m*^{-1}\sim40 V_{DD}^{2.5} [m_0^{-1}]$) makes both $V_{DD}$ and $L_{ch}$ scaling feasible with the scaling rule of $L_{ch}/V_{DD}=30~nm/V$ for $L_{ch}$ from 15nm to 6nm and corresponding $V_{DD}$ from 0.5V to 0.2V.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Dielectric Engineered Tunnel Field-Effect Transistor

The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high performance steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics results in a high electric field at the tunnel junction. As a result a record ON-current of about 1000 uA/um and a subthreshold swing (SS) below 20mV/dec are predicted for WTe2 DE-TFET. The proposed TFET works based on a homojunction channel and electrically doped contacts both of which are immune to interface states, dopant fluctuations, and dopant states in the band gap which typically deteriorate the OFF-state performance and SS in conventional TFETs.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors

2D transition metal dichalcogenides (TMDs) have attracted a lot of attention recently for energy-efficient tunneling-field-effect transistor (TFET) applications due to their excellent gate control resulting from their atomically thin dimensions. However, most TMDs have bandgaps (Eg) and effective masses (m*) outside the optimum range needed for high performance. It is shown here that the newly discovered 2D material, few-layer phosphorene, has several properties ideally suited for TFET applications: 1) direct Eg in the optimum range ~1.0-0.4 eV, 2) light transport m* (0.15m0), 3) anisotropic m* which increases the density of states near the band edges, and 4) a high mobility. These properties combine to provide phosphorene TFET outstanding ION 1 mA/um, ON/OFF ratio~1e6, scalability to 6 nm channel length and 0.2 V supply voltage, thereby significantly outperforming the best TMD-TFETs in energy-delay products. Full-band atomistic quantum transport simulations establish phosphorene TFETs as serious candidates for energy-eficient and scalable replacements of MOSFETs.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

From Fowler-Nordheim to Non-Equilibrium Green's Function Modeling of Tunneling

In this work, an analytic model is proposed which provides in a continuous manner the current-voltage characteristic (I-V) of high performance tunneling field-effect transistors (TFETs) based on direct bandgap semiconductors. The model provides closed-form expressions for I-V based on: 1) a modified version of the well-known Fowler-Nordheim (FN) formula (in the ON-state), and 2) an equation which describes the OFF-state performance while providing continuity at the ON/OFF threshold by means of a term introduced as the "continuity factor". It is shown that traditional approaches such as FN are accurate in TFETs only through correct evaluation of the total band bending distance and the "tunneling effective mass". General expressions for these two key parameters are provided. Moreover, it is demonstrated that the tunneling effective mass captures both the ellipticity of evanescent states and the dual (electron/hole) behavior of the tunneling carriers, and it is further shown that such a concept is even applicable to semiconductors with nontrivial energy dispersion. Ultimately, it is found that the I-V characteristics obtained by using this model are in close agreement with state-of-the-art quantum transport simulations both in the ON- and OFF-state, thus providing validation of the analytic approach.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Optimum High-k Oxide for the Best Performance of Ultra-scaled Double-Gate MOSFETs

A widely used technique to mitigate the gate leakage in the ultra-scaled metal oxide semiconductor field effect transistors (MOSFETs) is the use of high-k dielectrics, which provide the same equivalent oxide thickness (EOT) as $\rm SiO_2$, but thicker physical layers. However, using a thicker physical dielectric for the same EOT has a negative effect on the device performance due to the degradation of 2D electrostatics. In this letter, the effects of high-k oxides on double-gate (DG) MOSFET with the gate length under 20 nm are studied. We find that there is an optimum physical oxide thickness ($\rm T_{OX}$) for each gate stack, including $\rm SiO_2$ interface layer and one high-k material. For the same EOT, $\rm Al_2O_3$ (k=9) over 3 $\rmÅ$ $\rm SiO_2$ provides the best performance, while for $\rm HfO_2$ (k=20) and $\rm La_2O_3$ (k=30), $\rm SiO_2$ thicknesses should be 5 $\rmÅ$ and 7 $\rmÅ$, respectively. The effects of using high-k oxides and gate stacks on the performance of ultra-scaled MOSFETs are analyzed. While thin oxide thickness increases the gate leakage, the thick oxide layer reduces the gate control on the channel. Therefore, the physical thicknesses of gate stack should be optimized to achieve the best performance.

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preprint2015arXiv

Scaling Theory of Electrically Doped 2D Transistors

In this letter, it is shown that the existing scaling theories for chemically doped transistors cannot be applied to the novel class of electrically doped 2D transistors and the concept of equivalent oxide thickness (EOT) is not applicable anymore. Hence, a novel scaling theory is developed based on analytic solutions of the 2D Poisson equation. Full band atomistic quantum transport simulations verify the theory and show that the critical design parameters are the physical oxide thickness and distance between the gates. Accordingly, the most optimized electrically doped devices are those with the smallest spacing between the gates and the thinnest oxide, and not the smallest EOT.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Theoretical study of strain-dependent optical absorption in Stranski-Krastanov grown InAs/InGaAs/GaAs/AlGaAs quantum dots

A detailed theoretical study of the optical absorption in self-assembled quantum dots is presented in this paper. A rigorous atomistic strain model as well as a sophisticated electronic band structure model are used to ensure accurate prediction of the optical transitions in these devices . The optimized models presented in this paper are able to reproduce the experimental results with an error less than 1$\%$. The effects of incident light polarization, alloy mole fraction, quantum dot dimensions, and doping have been investigated. The in-plane polarized light absorption is more significant than the perpendicularly polarized light absorption. Increasing the mole fraction of the strain controlling layer leads to a lower energy gap and larger absorption wavelength. Surprisingly, the absorption wavelength is highly sensitive to changes in the dot diameter, but almost insensitive to changes in the dot height. This unpredicted behavior is explained by sensitivity analysis of different factors which affect the optical transition energy.

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preprint2015arXiv

Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials

In this work, the performance of Tunnel Field-Effect Transistors (TFETs) based on two-dimensional Transition Metal Dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations. One of the major challenges of TFETs is their low ON-currents. 2D material based TFETs can have tight gate control and high electric fields at the tunnel junction, and can in principle generate high ON-currents along with a sub-threshold swing smaller than 60 mV/dec. Our simulations reveal that high performance TMD TFETs, not only require good gate control, but also rely on the choice of the right channel material with optimum band gap, effective mass and source/drain doping level. Unlike previous works, a full band atomistic tight binding method is used self-consistently with 3D Poisson equation to simulate ballistic quantum transport in these devices. The effect of the choice of TMD material on the performance of the device and its transfer characteristics are discussed. Moreover, the criteria for high ON-currents are explained with a simple analytic model, showing the related fundamental factors. Finally, the subthreshold swing and energy-delay of these TFETs are compared with conventional CMOS devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Universal Behavior of Strain in Quantum Dots

Self-assembled quantum dots (QDs) are highly strained heterostructures. the lattice strain significantly modifies the electronic and optical properties of these devices. A universal behavior is observed in atomistic strain simulations (in terms of both strain magnitude and profile) of QDs with different shapes and materials. In this paper, this universal behavior is investigated by atomistic as well as analytic continuum models. Atomistic strain simulations are very accurate but computationally expensive. On the other hand, analytic continuum solutions are based on assumptions that significantly reduce the accuracy of the strain calculations, but are very fast. Both techniques indicate that the strain depends on the aspect ratio (AR) of the QDs, and not on the individual dimensions. Thus simple closed form equations are introduced which directly provide the atomistic strain values inside the QD as a function of the AR and the material parameters. Moreover, the conduction and valence band edges $E_{C/V}$ and their effective masses $m^*_{C/V}$ of the QDs are dictated by the strain and AR consequently. The universal dependence of atomistic strain on the AR is useful in many ways; Not only does it reduce the computational cost of atomistic simulations significantly, but it also provides information about the optical transitions of QDs given the knowledge of $E_{C/V}$ and $m^*_{C/V}$ from AR. Finally, these expressions are used to calculate optical transition wavelengths in InAs/GaAs QDs and the results agree well with experimental measurements and atomistic simulations.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Brillouin zone unfolding method for effective phonon spectra

Thermal properties are of great interest in modern electronic devices and nanostructures. Calculating these properties is straightforward when the device is made from a pure material, but problems arise when alloys are used. Specifically, only approximate bandstructures can be computed for random alloys and most often the Virtual Crystal Approximation (VCA) is used. Unfolding methods [T. B. Boykin, N. Kharche, G. Klimeck, and M. Korkusinski, J. Phys.: Condens. Matt. 19, 036203 (2007).] have proven very useful for tight-binding calculations of alloy electronic structure without the problems in the VCA, and the mathematical analogy between tight-binding and valence-force-field approaches to the phonon problem suggest they be employed here as well. However, there are some differences in the physics of the two problems requiring modifications to the electronic structure approach. We therefore derive a phonon alloy bandstructure (vibrational mode) approach based on our tight-binding electronic structure method, modifying the band-determination method to accommodate the different physical situation. Using the method, we study In$_x$Ga$_{1-x}$As alloys and find very good agreement with available experiments.

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