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Zuanming Jin

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Published work

4 published item(s)

preprint2021arXiv

Transition of laser-induced terahertz spin currents from torque- to conduction-electron-mediated transport

Spin transport is crucial for future spintronic devices operating at bandwidths up to the terahertz (THz) range. In F|N thin-film stacks made of a ferro/ferrimagnetic layer F and a normal-metal layer N, spin transport is mediated by (1) spin-polarized conduction electrons and/or (2) torque between electron spins. To identify a cross-over from (1) to (2), we study laser-driven spin currents in F|Pt stacks where F consists of model materials with different degrees of electrical conductivity. For the magnetic insulators YIG, GIG and maghemite, identical dynamics is observed. It arises from the THz interfacial spin Seebeck effect (SSE), is fully determined by the relaxation of the electrons in the metal layer and provides an estimate of the spin-mixing conductance of the GIG/Pt interface. Remarkably, in the half-metallic ferrimagnet Fe3O4 (magnetite), our measurements reveal two spin-current components with opposite direction. The slower, positive component exhibits SSE dynamics and is assigned to torque-type magnon excitation of the A- and B-spin sublattices of Fe3O4. The faster, negative component arises from the pyro-spintronic effect and can consistently be assigned to ultrafast demagnetization of e-sublattice minority-spin hopping electrons. This observation supports the magneto-electronic model of Fe3O4. In general, our results provide a new route to the contact-free separation of torque- and conduction-electron-mediated spin currents.

preprint2020arXiv

Terahertz emission in the van der Waals magnet CrSiTe3

The van der Waals magnet CrSiTe3 (CST) has captured immense interest because it is capable of retaining the long-range ferromagnetic order even in its monolayer form, thus offering potential use in spintronic devices. Bulk CST crystal has inversion symmetry that is broken on the crystal surface. Here, by employing ultrafast terahertz (THz) emission spectroscopy and time resolved THz spectroscopy, the THz emission of the CST crystal was investigated, which shows a strong THz emission from the crystal surface under femtosecond (fs) pulse excitation at 800 nm. Theoretical analysis based on space symmetry of CST suggests the dominant role of shift current occurring on the surface with a thickness of a few quintuple layers in producing the THz emission, in consistence with the experimental observation that the emitted THz amplitude strongly depends on the azimuthal and pumping polarization angles. The present study offers a new efficient THz emitter as well as a better understanding of the nonlinear optical response of CST. It hopefully will open a window toward the investigation on the nonlinear optical response in the mono-/few-layer van der Waals crystals with low-dimensional magnetism.

preprint2016arXiv

Probing the Charge Separation Process on In2S3/Pt-TiO2 Nanocomposites for Boosted Visible-light Photocatalytic Hydrogen Production

A simple refluxing wet-chemical approach is employed for fabricating In2S3/Pt-TiO2 heterogeneous catalysts for hydrogen generation under visible light irradiation. When the mass ratio between Pt-TiO2 and cubic-phased In2S3 (denoted as In2S3/Pt-TiO2) is two, the composite catalyst shows the highest hydrogen production, which exhibits an 82-fold enhancement over in-situ deposited Pt-In2S3. UV-vis diffuse reflectance and valence band X-ray photoelectron spectra elucidate that the conduction band of In2S3 is 0.3 eV more negative compared to that of TiO2, favoring charge separation in the nanocomposites. Photoelectrochemical transient photo-current measurements and optical pump - terahertz probe spectroscopic studies further corroborate the charge separation in In2S3/Pt-TiO2. The migration of photo-induced electrons from the In2S3 conduction band to the TiO2 conduction band and subsequently into the Pt nanoparticles is found to occur within 5 picoseconds. Based on the experimental evidence, a charge separation process is proposed which accounts for the enhanced activity exhibited by the In2S3/Pt-TiO2 composite catalysts.

preprint2010arXiv

Electron spin relaxation in intrinsic bulk InP semiconductor

Electron spin dynamics in intrinsic bulk Indium Phosphide (InP) semiconductor is studied by time resolved pump probe reflectivity (TRPPR) technique using the co- and counter-circularly polarized femtosecond pulses at room temperature and 70 K. The reflectivity change from bleaching into absorption is observed with increasing pump photon energy, which can be explained in terms of the spin sensitive band filling and band gap renormalization effects. Density dependence of electron spin relaxation time shows similar tendency at room temperature and 70 K. With increasing carrier density, the electron spin relaxation time increases and then decreases after reaching a maximum value. Our experimental results agree well with the recent theoretical prediction [Jiang and Wu, Phys. Rev. B 79, 125206 (2009)] and D'yakonov-Perel' mechanism is considered as a dominating contribution to the electron spin relaxation in intrinsic bulk InP semiconductor.