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Zili Wu

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Published work

3 published item(s)

preprint2022arXiv

Ultra-low Latency Adaptive Local Binary Spiking Neural Network with Accuracy Loss Estimator

Spiking neural network (SNN) is a brain-inspired model which has more spatio-temporal information processing capacity and computational energy efficiency. However, with the increasing depth of SNNs, the memory problem caused by the weights of SNNs has gradually attracted attention. Inspired by Artificial Neural Networks (ANNs) quantization technology, binarized SNN (BSNN) is introduced to solve the memory problem. Due to the lack of suitable learning algorithms, BSNN is usually obtained by ANN-to-SNN conversion, whose accuracy will be limited by the trained ANNs. In this paper, we propose an ultra-low latency adaptive local binary spiking neural network (ALBSNN) with accuracy loss estimators, which dynamically selects the network layers to be binarized to ensure the accuracy of the network by evaluating the error caused by the binarized weights during the network learning process. Experimental results show that this method can reduce storage space by more than 20 % without losing network accuracy. At the same time, in order to accelerate the training speed of the network, the global average pooling(GAP) layer is introduced to replace the fully connected layers by the combination of convolution and pooling, so that SNNs can use a small number of time steps to obtain better recognition accuracy. In the extreme case of using only one time step, we still can achieve 92.92 %, 91.63 % ,and 63.54 % testing accuracy on three different datasets, FashionMNIST, CIFAR-10, and CIFAR-100, respectively.

preprint2020arXiv

Balanced Order Batching with Task-Oriented Graph Clustering

Balanced order batching problem (BOBP) arises from the process of warehouse picking in Cainiao, the largest logistics platform in China. Batching orders together in the picking process to form a single picking route, reduces travel distance. The reason for its importance is that order picking is a labor intensive process and, by using good batching methods, substantial savings can be obtained. The BOBP is a NP-hard combinational optimization problem and designing a good problem-specific heuristic under the quasi-real-time system response requirement is non-trivial. In this paper, rather than designing heuristics, we propose an end-to-end learning and optimization framework named Balanced Task-orientated Graph Clustering Network (BTOGCN) to solve the BOBP by reducing it to balanced graph clustering optimization problem. In BTOGCN, a task-oriented estimator network is introduced to guide the type-aware heterogeneous graph clustering networks to find a better clustering result related to the BOBP objective. Through comprehensive experiments on single-graph and multi-graphs, we show: 1) our balanced task-oriented graph clustering network can directly utilize the guidance of target signal and outperforms the two-stage deep embedding and deep clustering method; 2) our method obtains an average 4.57m and 0.13m picking distance ("m" is the abbreviation of the meter (the SI base unit of length)) reduction than the expert-designed algorithm on single and multi-graph set and has a good generalization ability to apply in practical scenario.

preprint2009arXiv

Raman study of Fano interference in p-type doped silicon

As the silicon industry continues to push the limits of device dimensions, tools such as Raman spectroscopy are ideal to analyze and characterize the doped silicon channels. The effect of inter-valence band transitions on the zone center optical phonon in heavily p-type doped silicon is studied by Raman spectroscopy for a wide range of excitation wavelengths extending from the red (632.8 nm) into the ultra-violet (325 nm). The asymmetry in the one-phonon Raman lineshape is attributed to a Fano interference involving the overlap of a continuum of electronic excitations with a discrete phonon state. We identify a transition above and below the one-dimensional critical point (E = 3.4 eV) in the electronic excitation spectrum of silicon. The relationship between the anisotropic silicon band structure and the penetration depth is discussed in the context of possible device applications.