1.5 μm Epitaxially Regrown Photonic Crystal Surface Emitting Laser Diode
We present an InP-based epitaxially regrown photonic crystal surface emitting laser diode, lasing in quasi- CW conditions at 1523nm.
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Zijun Bian appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.
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