1.5 μm Epitaxially Regrown Photonic Crystal Surface Emitting Laser Diode
We present an InP-based epitaxially regrown photonic crystal surface emitting laser diode, lasing in quasi- CW conditions at 1523nm.
Discover
Workspaces
Network
Opportunities
Account
Researcher profile
David Childs contributes to research discovery and scholarly infrastructure.
Trust snapshot
Actions
Identity and collaboration
Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.
Log in to claimDirect collaboration
Claim this author entity first to unlock direct invitations.
Research graph
Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.
BZPEER is loading the nearby papers, people, topics and institutions for this page.
Published work
We present an InP-based epitaxially regrown photonic crystal surface emitting laser diode, lasing in quasi- CW conditions at 1523nm.
We demonstrate an on-chip Silicon-on-Insulator (SOI) axicon etched using a low resolution (200 nm feature size, 250 nm gap) deep-ultraviolet lithographic fabrication. The axicon consists of circular gratings with seven stages of 1x2 multimode interferometers. We present a technique to apodize the gratings azimuthally by breaking up the circles into arcs which successfully increased the penetration depth in the gratings from $\approx$5 $μ$m to $\approx$55 $μ$m. We characterize the device's performance by coupling 1300$\pm$50 nm swept source laser in to the chip from the axicon, and measuring the out-coupled light from a grating coupler. Further, we also present the implementation of balanced homodyne detection method for the spectral characterization of the device and show that the position of the output lobe of the axicon does not change significantly with wavelength.