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Zhurun Ji

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2 published item(s)

preprint2020arXiv

Z_2 Photonic topological insulators in the visible wavelength range for robust nanoscale photonics

Topological photonics provides an ideal platform for demonstrating novel band topology concepts, which are also promising for robust waveguiding, communication and computation applications. However, many challenges such as extremely large device footprint and functionality at short wavelengths remain to be solved which are required to make practical and useful devices that can also couple to electronic excitations in many important organic and inorganic semiconductors. In this letter, we report an experimental realization of Z_2 photonic topological insulators with their topological edge state energies spanning across the visible wavelength range including in the sub-500 nm regime. The photonic structures are based on deformed hexagonal lattices with preserved six-fold rotational symmetry patterned on suspended SiNx membranes. The experimentally measured energy-momentum dispersion of the topological lattices directly show topological band inversion by the swapping of the brightness of the bulk energy bands, and also the helical edge states when the measurement is taken near the topological interface. The robust topological transport of the helical edge modes in real space is demonstrated by successfully guiding circularly polarized light beams unidirectionally through sharp kinks without major signal loss. This work paves the way for small footprint photonic topological devices working in the short wavelength range that can also be utilized to couple to excitons for unconventional light-matter interactions at the nanoscale.

preprint2019arXiv

Circular photogalvanic effect in 2D van der Waals heterostructure

Utilizing spin or valley degree of freedom is one of the promising approaches to realize more energy-efficient information processing. In the 2D transition metal dichalcogenide, the spin/valley current can be generated by utilizing the circular photogalvanic effect (CPGE), i.e., the generation of photocurrent by a circularly polarized light. Here we show that an in-plane electric field at MoS2/WSe2 heterostructure-electrode boundary results in an electrically tunable circular photogalvanic effect (CPGE) under optical excitation with normal incidence. The observed CPGE can be explained by the valence band shift due to the in-plane electric field and different effective relaxation times between hole and electron combined with the valley optical selection rule. Furthermore, we show that the CPGE can be controlled by changing the Fermi level using an out-of-plane electric field. Such phenomena persist even at room temperature. This finding may facilitate the utilization of 2D heterostructure as an opto-valleytronics and opto-spintronics device platform.