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Zhuoyu Chen

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cond-mat.supr-con cond-mat.mtrl-sci cond-mat.str-el

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preprint2023arXiv

Low-energy electrodynamics of infinite-layer nickelates: evidence for d-wave superconductivity in the dirty limit

The discovery of superconductivity in infinite-layer nickelates establishes a new category of unconventional superconductors that share structural and electronic similarities with cuprates. Despite exciting advances, such as the establishment of a cuprate-like phase diagram and the observation of charge order and short-range antiferromagnetic fluctuation, the key issues of superconducting pairing symmetry, gap amplitude, and superconducting fluctuation remain elusive. In this work, we utilize static and ultrafast terahertz spectroscopy to address these outstanding problems. We demonstrate that the equilibrium terahertz conductivity and nonequilibrium terahertz responses of an optimally Sr-doped nickelate film ($T_c$ = 17 K) are in line with the electrodynamics of $d$-wave superconductivity in the dirty limit. The gap-to-$T_c$ ratio 2$Δ/k_\mathrm{B}T_\mathrm{c}$ is extracted to be 3.4, indicating the superconductivity falls in the weak-coupling regime. In addition, we observed significant superconducting fluctuation near $T_\mathrm{c}$, while it does not extend into the deep normal state as optimally hole-doped cuprates. Our result highlights a new $d$-wave system which closely resembles the electron-doped cuprates, expanding the family of unconventional superconductivity in oxides.

preprint2022arXiv

Electronic structure of superconducting nickelates probed by resonant photoemission spectroscopy

The discovery of infinite-layer nickelate superconductors has spurred enormous interest. While the Ni$^{1+}$ cations possess nominally the same 3$d^9$ configuration as Cu$^{2+}$ in cuprates, the electronic structure variances remain elusive. Here, we present a soft x-ray photoemission spectroscopy study on parent and doped infinite-layer Pr-nickelate thin films with a doped perovskite reference. By identifying the Ni character with resonant photoemission and comparison to density functional theory + U (on-site Coulomb repulsion energy) calculations, we estimate U ~5 eV, smaller than the charge transfer energy $Δ$ ~8 eV, confirming the Mott-Hubbard electronic structure in contrast to charge-transfer cuprates. Near the Fermi level ($E_F$), we observe a signature of occupied rare-earth states in the parent compound, which is consistent with a self-doping picture. Our results demonstrate a correlation between the superconducting transition temperature and the oxygen 2$p$ hybridization near $E_F$ when comparing hole-doped nickelates and cuprates.

preprint2021arXiv

Magic Doping and Robust Superconductivity in Monolayer FeSe on Titanates

The enhanced superconductivity in monolayer FeSe on titanates opens a fascinating pathway towards the rational design of high-temperature superconductors. Utilizing the state-of-the-art oxide plus chalcogenide molecular beam epitaxy systems in situ connected to a synchrotron angle-resolved photoemission spectroscope, epitaxial LaTiO3 layers with varied atomic thicknesses are inserted between monolayer FeSe and SrTiO3, for systematic modulation of interfacial chemical potential.With the dramatic increase of electron accumulation at the LaTiO3-SrTiO3 surface, providing a substantial surge of work function mismatch across the FeSe-oxide interface, the charge transfer and the superconducting gap in the monolayer FeSe are found to remain markedly robust. This unexpected finding indicates the existence of an intrinsically anchored magic doping within the monolayer FeSe systems.

preprint2016arXiv

Anisotropic transport at the LaAlO3/SrTiO3 interface explained by microscopic imaging of channel-flow over SrTiO3 domains

Oxide interfaces, including the LaAlO3/SrTiO3 interface, have been a subject of intense interest for over a decade due to their rich physics and potential as low dimensional nanoelectronic systems. The field has reached the stage where efforts are invested in developing devices. It is critical now to understand the functionalities and limitations of such devices. Recent scanning probe measurements of the LaAlO3/SrTiO3 interface have revealed locally enhanced current flow and accumulation of charge along channels related to SrTiO3 structural domains. These observations raised a key question regarding the role these modulations play in the macroscopic properties of devices. Here we show that the microscopic picture, mapped by scanning superconducting quantum interference device, accounts for a substantial part of the macroscopically measured transport anisotropy. We compared local flux data with transport values, measured simultaneously, over various SrTiO3 domain configurations. We show a clear relation between maps of local current density over specific domain configurations and the measured anisotropy for the same device. The domains divert the direction of current flow, resulting in a direction dependent resistance. We also show that the modulation can be significant and that in some cases up to 95% of the current is modulated over the channels. The orientation and distribution of the SrTiO3 structural domains change between different cooldowns of the same device or when electric fields are applied, affecting the device behavior. Our results, highlight the importance of substrate physics, and in particular, the role of structural domains, in controlling electronic properties of LaAlO3/SrTiO3 devices. Further, these results point to new research directions, exploiting the STO domains ability to divert or even carry current.