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Researcher profile

Zhongyuan Liu

Zhongyuan Liu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallmath.APmath-phmath.MPquant-ph

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Published work

8 published item(s)

preprint2024arXiv

Isotope engineering for spin defects in van der Waals materials

Spin defects in van der Waals materials offer a promising platform for advancing quantum technologies. Here, we propose and demonstrate a powerful technique based on isotope engineering of host materials to significantly enhance the coherence properties of embedded spin defects. Focusing on the recently-discovered negatively charged boron vacancy center ($\mathrm{V}_{\mathrm{B}}^-$) in hexagonal boron nitride (hBN), we grow isotopically purified $\mathrm{h}{}^{10}\mathrm{B}{}^{15}\mathrm{N}$ crystals. Compared to $\mathrm{V}_{\mathrm{B}}^-$ in hBN with the natural distribution of isotopes, we observe substantially narrower and less crowded $\mathrm{V}_{\mathrm{B}}^-$ spin transitions as well as extended coherence time $T_2$ and relaxation time $T_1$. For quantum sensing, $\mathrm{V}_{\mathrm{B}}^-$ centers in our $\mathrm{h}{}^{10}\mathrm{B}{}^{15}\mathrm{N}$ samples exhibit a factor of $4$ ($2$) enhancement in DC (AC) magnetic field sensitivity. For additional quantum resources, the individual addressability of the $\mathrm{V}_{\mathrm{B}}^-$ hyperfine levels enables the dynamical polarization and coherent control of the three nearest-neighbor ${}^{15}\mathrm{N}$ nuclear spins. Our results demonstrate the power of isotope engineering for enhancing the properties of quantum spin defects in hBN, and can be readily extended to improving spin qubits in a broad family of van der Waals materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Direct Observation of Room-Temperature Dislocation Plasticity in Diamond

It is well known that diamond does not deform plastically at room temperature and usually fails in catastrophic brittle fracture. Here we demonstrate room-temperature dislocation plasticity in sub-micrometer sized diamond pillars by in-situ mechanical testing in the transmission electron microscope. We document in unprecedented details of spatio-temporal features of the dislocations introduced by the confinement-free compression, including dislocation generation and propagation. Atom-resolved observations with tomographic reconstructions show unequivocally that mixed-type dislocations with Burgers vectors of 1/2<110> are activated in the non-close-packed {001} planes of diamond under uniaxial compression of <111> and <110> directions, respectively, while being activated in the {111} planes under the <100> directional loading, indicating orientation-dependent dislocation plasticity. These results provide new insights into the mechanical behavior of diamond and stimulate reconsideration of the basic deformation mechanism in diamond as well as in other brittle covalent crystals at low temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Orthogonal electric control of the out-of-plane field-effect in two-dimensional ferroelectric alpha-In2Se3

Tuning the electric properties of crystalline solids is at the heart of material science and electronics. Generating the electric field-effect via an external voltage is a clean, continuous and systematic method. Here, utilizing the unique electric dipole locking in van der Waals (vdW) ferroelectric alpha-In2Se3, we report a new approach to establish the electric gating effect, where the electrostatic doping in the out-of-plane direction is induced and controlled by an in-plane voltage. With the vertical vdW heterostructure of ultrathin alpha-In2Se3 and MoS2, we validate an in-plane voltage gated coplanar field-effect transistor (CP-FET) with distinguished and retentive on/off ratio. Our results demonstrate unprecedented electric control of ferroelectricity, which paves the way for integrating two-dimensional (2D) ferroelectric into novel nanoelectronic devices with broad applications.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Large Linear Magnetoresistance and Shubnikov-de Hass Oscillations in Single Crystals of YPdBi Heusler Topological Insulators

We report the observation of a large linear magnetoresistance (MR) and Shubnikov-de Hass (SdH) quantum oscillations in single crystals of YPdBi Heusler topological insulators. Owning to the successfully obtained the high-quality YPdBi single crystals, large non-saturating linear MR of as high as 350% at 5K and over 120% at 300 K under a moderate magnetic field of 7 T is observed. In addition to the large, field-linear MR, the samples exhibit pronounced SdH quantum oscillations at low temperature. Analysis of the SdH data manifests that the high-mobility bulk electron carriers dominate the magnetotransport and are responsible for the observed large linear MR in YPdBi crystals. These findings imply that the Heusler-based topological insulators have superiorities for investigating the novel quantum transport properties and developing the potential applications.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Multiple Vortices for the Shallow Water Equation

In this paper, we construct stationary classical solutions of the shallow water equation with vanishing Froude number $Fr$ in the so-called lake model. To this end we need to study solutions to the following semilinear elliptic problem \[{cases} -\varepsilon^2\text{div}(\frac{\nabla u}{b})=b(u-q\log\frac{1}{\varepsilon})_+^{p},& \text{in}\; Ω, u=0, &\text{on}\;\partial Ω, {cases} \] for small $\varepsilon>0$, where $p>1$, $\text{div}(\frac{\nabla q}{b})=0$ and $Ω\subset\mathbb{R}^2$ is a smooth bounded domain,. We showed that if $\frac{q^2}{b}$ has $m$ strictly local minimum(maximum) points $\bar z_i,\,i=1,...,m$, then there is a stationary classical solution approximating stationary $m$ points vortex solution of shallow water equations with vorticity $\sum_{i=1}^m\frac{2πq(\bar z_i)}{b(\bar z_i)}$. Moreover, strictly local minimum points of $\frac{q^2}{b}$ on the boundary can also give vortex solutions for the shallow water equation. As a further study we construct vortex pair solutions as well. Existence and asymptotic behavior of single point non-vanishing vortex solutions were studied by S. De Valeriola and J. Van Schaftingen.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Fabrication and characterization of the gapless half-Heusler YPtSb thin films

Half-Heusler YPtSb thin films were fabricated by magnetron co-sputtering method on MgO-buffered SiO2/Si(001) substrates. X-ray diffraction pattern and Energy dispersive X-ray spectroscopy confirmed the high-quality growth and stoichiometry. The temperature dependence of the resistivity shows a semiconducting-type behavior down to low temperature. The Hall mobility was determined to be 450 cm2/Vs at 300K, which is much higher than the bulk value (300 cm2/Vs). In-plane magnetoresistance (MR) measurements with fields applied along and perpendicular to the current direction show opposite MR signs, which suggests the possible existence of the topological surface states.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Regularization of point vortices for the Euler equation in dimension two, part II

In this paper, we continue to construct stationary classical solutions of the incompressible Euler equation approximating singular stationary solutions of this equation. This procedure now is carried out by constructing solutions to the following elliptic problem \[ {cases} -\ep^2 Δu=(u-q-\fracκ{2π}\ln\frac{1}{\ep})_+^p-(q-\fracκ{2π}\ln\frac{1}{\ep}-u)_+^p, \quad & x\inΩ, u=0, \quad & x\in\partialΩ, {cases} \] where $p>1$, $Ω\subset\mathbb{R}^2$ is a bounded domain, $q$ is a harmonic function. We showed that if $Ω$ is a simply-connected smooth domain, then for any given non-degenerate critical point of Kirchhoff-Routh function $\mathcal{W}(x_1^+,...,x_m^+,x_1^-,...,x_n^-)$ with $κ^+_i=κ>0\,(i=1,...,m)$ and $κ^-_j=-κ\,(j=1,...,n)$, there is a stationary classical solution approximating stationary $m+n$ points vortex solution of incompressible Euler equations with total vorticity $(m-n)κ$.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Influence of tetragonal distortion on the topological electronic structure of the half-Heusler compound LaPtBi from first principles

The electronic structures of tetragonally distorted half-Heuselr compound LaPtBi in the C1b structure are investigated in the framework of density functional theory using the full potential linearized augmented plane with local spin density approximation method. The calculation results show that both the band structures and the Fermi level can be tuned by using either compressive or tensile in-plane strain. A large bulk band gap of 0.3 eV can be induced through the application of a compressive in-pane strain in LaPtBi with the assumption of a relaxed volume of the unit cell. Our results could serve as a guidance to realize topological insulators in half-Heusler compounds by strain engineering.

0 citations0 reviewsNo code linkedOpen access