BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Zhongyuan Liu

Zhongyuan Liu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scimath.APcond-mat.mes-hallcond-mat.str-elmath-phmath.MPcond-mat.supr-conphysics.opticsquant-ph

Catalog footprint

What is connected

15works
9topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

15 published item(s)

preprint2024arXiv

Isotope engineering for spin defects in van der Waals materials

Spin defects in van der Waals materials offer a promising platform for advancing quantum technologies. Here, we propose and demonstrate a powerful technique based on isotope engineering of host materials to significantly enhance the coherence properties of embedded spin defects. Focusing on the recently-discovered negatively charged boron vacancy center ($\mathrm{V}_{\mathrm{B}}^-$) in hexagonal boron nitride (hBN), we grow isotopically purified $\mathrm{h}{}^{10}\mathrm{B}{}^{15}\mathrm{N}$ crystals. Compared to $\mathrm{V}_{\mathrm{B}}^-$ in hBN with the natural distribution of isotopes, we observe substantially narrower and less crowded $\mathrm{V}_{\mathrm{B}}^-$ spin transitions as well as extended coherence time $T_2$ and relaxation time $T_1$. For quantum sensing, $\mathrm{V}_{\mathrm{B}}^-$ centers in our $\mathrm{h}{}^{10}\mathrm{B}{}^{15}\mathrm{N}$ samples exhibit a factor of $4$ ($2$) enhancement in DC (AC) magnetic field sensitivity. For additional quantum resources, the individual addressability of the $\mathrm{V}_{\mathrm{B}}^-$ hyperfine levels enables the dynamical polarization and coherent control of the three nearest-neighbor ${}^{15}\mathrm{N}$ nuclear spins. Our results demonstrate the power of isotope engineering for enhancing the properties of quantum spin defects in hBN, and can be readily extended to improving spin qubits in a broad family of van der Waals materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Direct Observation of Room-Temperature Dislocation Plasticity in Diamond

It is well known that diamond does not deform plastically at room temperature and usually fails in catastrophic brittle fracture. Here we demonstrate room-temperature dislocation plasticity in sub-micrometer sized diamond pillars by in-situ mechanical testing in the transmission electron microscope. We document in unprecedented details of spatio-temporal features of the dislocations introduced by the confinement-free compression, including dislocation generation and propagation. Atom-resolved observations with tomographic reconstructions show unequivocally that mixed-type dislocations with Burgers vectors of 1/2<110> are activated in the non-close-packed {001} planes of diamond under uniaxial compression of <111> and <110> directions, respectively, while being activated in the {111} planes under the <100> directional loading, indicating orientation-dependent dislocation plasticity. These results provide new insights into the mechanical behavior of diamond and stimulate reconsideration of the basic deformation mechanism in diamond as well as in other brittle covalent crystals at low temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Orthogonal electric control of the out-of-plane field-effect in two-dimensional ferroelectric alpha-In2Se3

Tuning the electric properties of crystalline solids is at the heart of material science and electronics. Generating the electric field-effect via an external voltage is a clean, continuous and systematic method. Here, utilizing the unique electric dipole locking in van der Waals (vdW) ferroelectric alpha-In2Se3, we report a new approach to establish the electric gating effect, where the electrostatic doping in the out-of-plane direction is induced and controlled by an in-plane voltage. With the vertical vdW heterostructure of ultrathin alpha-In2Se3 and MoS2, we validate an in-plane voltage gated coplanar field-effect transistor (CP-FET) with distinguished and retentive on/off ratio. Our results demonstrate unprecedented electric control of ferroelectricity, which paves the way for integrating two-dimensional (2D) ferroelectric into novel nanoelectronic devices with broad applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Broadband black phosphorus optical modulator in visible to mid-infrared spectral range

Black phosphorous (BP), a two-dimensional (2D) material, has a direct bandgap, which fills up the bandgap lacuna left by graphene topological insulators and transition-metal dichalcogenides because of its dependence on the layers and applied strains. Theoretically, the direct and tunable band gap indicates the broadband applications in optoelectronics with high efficiencies in the spectral range from visible to mid-infrared. Here, a BP broadband optical modulator is experimentally constructed and the passively modulated lasers at 639 nm (red), 1.06 um (near-infrared) and 2.1 um (mid-infrared) are realized by using the BP optical modulator as the saturable absorber in bulk lasers. The obtained results provide a promising alternative for rare broadband optical modulators and broaden the application range of BP in photonics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Coexistence of multiple metastable polytypes in rhombohedral bismuth

Derivative structural polytypes coexisting with the rhombohedral A7 structure of elemental bismuth (Bi) have been discovered at ambient condition, based on microstructure analyses of pure Bi samples treated under high pressure and high temperature conditions. Three structures with atomic positions close to those of the A7 structure have been identified through first-principles calculations, showing these polytypes energetically comparable to the A7 structure under ambient condition. Simulated diffraction data are in excellent agreement with the experimental observations. We argue that previously reported variations in physical properties (e.g., density, melting point, electrical conductivity, and magnetism) in bismuth could be due to the formation of these polytypes. The coexistence of metastable derivative structural polytypes may be a widely occurring phenomenon in other elemental materials

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

High Electron Mobility and Large Magnetoresistance in the Half-Heusler Semimetal LuPtBi

Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magneto-electric devices. Here, we report on the discovery of an electron-hole-compensated half-Heusler semimetal LuPtBi that exhibits an extremely high electron mobility of up to 79000 cm2/Vs with a non-saturating positive MR as large as 3200% at 2 K. Remarkably, the mobility at 300 K is found to exceed 10500 cm2/Vs, which is among the highest values reported in three-dimensional bulk materials thus far. The clean Shubnikov-de Haas quantum oscillation observed at low temperatures and the first-principles calculations together indicate that the high electron mobility is due to a rather small effective carrier mass caused by the distinctive band structure of the crystal. Our finding provide a new approach for finding large, high-mobility MR materials by designing an appropriate Fermi surface topology starting from simple electron-hole-compensated semimetals.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Transition from semiconducting to metallic-like conducting and weak antilocalization effect in single crystals of LuPtSb

High quality half-Heusler single crystals of LuPtSb have been synthesized by a Pb flux method. The temperature dependent resistivity and Hall effects indicate that the LuPtSb crystal is a p-type gapless semiconductor showing a transition from semiconducting to metallic conducting at 150 K. Moreover, a weakly temperature-dependent positive magnetoresistance (MR) as large as 109 % and high carrier mobility up to 2950 cm2/Vs are experimentally observed at temperatures below 150 K. The low-field MR data shows evidence for weak antilocalization (WAL) effect at temperatures even up to 150 K. Analysis of the temperature and angle dependent magnetoconductance manifests that the WAL effect originates from the bulk contribution owing to the strong spin-orbital coupling.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Weak Antilocalization Effect and Noncentrosymmetric Superconductivity in a Topologically Nontrivial Semimetal LuPdBi

A large number of half-Heusler compounds have been recently proposed as three-dimensional (3D) topological insulators (TIs) with tunable physical properties.However, no transport measurements associated with the topological surface states have been observed in these half-Heusler candidates due to the dominating contribution from bulk electrical conductance. Here we show that, by reducing the mobility of bulk carriers, a two-dimensional (2D) weak antilocalization (WAL) effect, one of the hallmarks of topological surface states, was experimentally revealed from the tilted magnetic field dependence of magnetoconductance in a topologically nontrivial semimetal LuPdBi. Besides the observation of a 2D WAL effect, a superconducting transition was revealed at Tc~1.7 K in the same bulk LuPdBi. Quantitative analysis within the framework of a generalized BCS theory leads to the conclusion that the noncentrosymmetric superconductivity of LuPdBi is fully gapped with a possibly unconventional pairing character. The co-existence of superconductivity and the transport signature of topological surface states in the same bulk alloy suggests that LuPdBi represents a very promising candidate as a topological superconductor.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Large Linear Magnetoresistance and Shubnikov-de Hass Oscillations in Single Crystals of YPdBi Heusler Topological Insulators

We report the observation of a large linear magnetoresistance (MR) and Shubnikov-de Hass (SdH) quantum oscillations in single crystals of YPdBi Heusler topological insulators. Owning to the successfully obtained the high-quality YPdBi single crystals, large non-saturating linear MR of as high as 350% at 5K and over 120% at 300 K under a moderate magnetic field of 7 T is observed. In addition to the large, field-linear MR, the samples exhibit pronounced SdH quantum oscillations at low temperature. Analysis of the SdH data manifests that the high-mobility bulk electron carriers dominate the magnetotransport and are responsible for the observed large linear MR in YPdBi crystals. These findings imply that the Heusler-based topological insulators have superiorities for investigating the novel quantum transport properties and developing the potential applications.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Multiple Vortices for the Shallow Water Equation

In this paper, we construct stationary classical solutions of the shallow water equation with vanishing Froude number $Fr$ in the so-called lake model. To this end we need to study solutions to the following semilinear elliptic problem \[{cases} -\varepsilon^2\text{div}(\frac{\nabla u}{b})=b(u-q\log\frac{1}{\varepsilon})_+^{p},& \text{in}\; Ω, u=0, &\text{on}\;\partial Ω, {cases} \] for small $\varepsilon>0$, where $p>1$, $\text{div}(\frac{\nabla q}{b})=0$ and $Ω\subset\mathbb{R}^2$ is a smooth bounded domain,. We showed that if $\frac{q^2}{b}$ has $m$ strictly local minimum(maximum) points $\bar z_i,\,i=1,...,m$, then there is a stationary classical solution approximating stationary $m$ points vortex solution of shallow water equations with vorticity $\sum_{i=1}^m\frac{2πq(\bar z_i)}{b(\bar z_i)}$. Moreover, strictly local minimum points of $\frac{q^2}{b}$ on the boundary can also give vortex solutions for the shallow water equation. As a further study we construct vortex pair solutions as well. Existence and asymptotic behavior of single point non-vanishing vortex solutions were studied by S. De Valeriola and J. Van Schaftingen.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Fabrication and characterization of the gapless half-Heusler YPtSb thin films

Half-Heusler YPtSb thin films were fabricated by magnetron co-sputtering method on MgO-buffered SiO2/Si(001) substrates. X-ray diffraction pattern and Energy dispersive X-ray spectroscopy confirmed the high-quality growth and stoichiometry. The temperature dependence of the resistivity shows a semiconducting-type behavior down to low temperature. The Hall mobility was determined to be 450 cm2/Vs at 300K, which is much higher than the bulk value (300 cm2/Vs). In-plane magnetoresistance (MR) measurements with fields applied along and perpendicular to the current direction show opposite MR signs, which suggests the possible existence of the topological surface states.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Regularization of point vortices for the Euler equation in dimension two

In this paper, we construct stationary classical solutions of the incompressible Euler equation approximating singular stationary solutions of this equation. This procedure is carried out by constructing solutions to the following elliptic problem [ -\ep^2 Δu=(u-q-\fracκ{2π}\ln\frac{1}{\ep})_+^p, \quad & x\inΩ, u=0, \quad & x\in\partialΩ, ] where $p>1$, $Ω\subset\mathbb{R}^2$ is a bounded domain, $q$ is a harmonic function. We showed that if $Ω$ is simply-connected smooth domain, then for any given non-degenerate critical point of Kirchhoff-Routh function $\mathcal{W}(x_1,...,x_m)$ with the same strength $κ>0$, there is a stationary classical solution approximating stationary $m$ points vortex solution of incompressible Euler equations with vorticity $mκ$. Existence and asymptotic behavior of single point non-vanishing vortex solutions were studied by D. Smets and J. Van Schaftingen (2010).

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Regularization of point vortices for the Euler equation in dimension two, part II

In this paper, we continue to construct stationary classical solutions of the incompressible Euler equation approximating singular stationary solutions of this equation. This procedure now is carried out by constructing solutions to the following elliptic problem \[ {cases} -\ep^2 Δu=(u-q-\fracκ{2π}\ln\frac{1}{\ep})_+^p-(q-\fracκ{2π}\ln\frac{1}{\ep}-u)_+^p, \quad & x\inΩ, u=0, \quad & x\in\partialΩ, {cases} \] where $p>1$, $Ω\subset\mathbb{R}^2$ is a bounded domain, $q$ is a harmonic function. We showed that if $Ω$ is a simply-connected smooth domain, then for any given non-degenerate critical point of Kirchhoff-Routh function $\mathcal{W}(x_1^+,...,x_m^+,x_1^-,...,x_n^-)$ with $κ^+_i=κ>0\,(i=1,...,m)$ and $κ^-_j=-κ\,(j=1,...,n)$, there is a stationary classical solution approximating stationary $m+n$ points vortex solution of incompressible Euler equations with total vorticity $(m-n)κ$.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Influence of tetragonal distortion on the topological electronic structure of the half-Heusler compound LaPtBi from first principles

The electronic structures of tetragonally distorted half-Heuselr compound LaPtBi in the C1b structure are investigated in the framework of density functional theory using the full potential linearized augmented plane with local spin density approximation method. The calculation results show that both the band structures and the Fermi level can be tuned by using either compressive or tensile in-plane strain. A large bulk band gap of 0.3 eV can be induced through the application of a compressive in-pane strain in LaPtBi with the assumption of a relaxed volume of the unit cell. Our results could serve as a guidance to realize topological insulators in half-Heusler compounds by strain engineering.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Universal phase transitions of B1 structured stoichiometric transition-metal carbides

The high-pressure phase transitions of B1-structured stoichiometric transition metal carbides (TMCs, TM=Ti, Zr, Hf, V, Nb, and Ta) were systematically investigated using ab initio calculations. These carbides underwent universal phase transitions along two novel phase-transition routes, namely, B1\rightarrowdistorted TlI (TlI')\rightarrowTlI and/or B1\rightarrowdistorted TiB (TiB')\rightarrowTiB, when subjected to pressures. The two routes can coexist possibly because of the tiny enthalpy differences between the new phases under corresponding pressures. Four new phases result from atomic slips of the B1-structured parent phases under pressure. After completely releasing the pressure, taking TiC as a representative of TMCs, only its new TlI'-type phase is mechanically and dynamically stable, and may be recovered.

0 citations0 reviewsNo code linkedOpen access