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Zhiyong Fan

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Biological Physics cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el physics.med-ph

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preprint2022arXiv

Ultrafast disinfection of SARS-CoV-2 viruses

The wide use of surgical masks has been proven effective for mitigating the spread of respiration diseases, such as COVID-19, alongside social distance control, vaccines, and other efforts. With the newly reported variants, such as Delta and Omicron, a higher spread rate had been found compared to the initial strains. People might get infected even by inhaling fewer loading of viruses. More frequent sterilization of surgical masks is needed to protect the wearers. However, it is challenging to sterilize the commodity surgical masks with a fast and effective method. Herein, we reported the sterilization of the SARS-CoV-2 viruses within an ultra-short time, while retaining the mask performance. Silver thin film is coated on commercial polyimide film by physical vapor deposition and patterned by laser scribing to form a Joule heating electrode. Another layer of the gold thin film was coated onto the opposite side of the device to promote the uniformity of the Joule heating through nano-heat transfer regulation. As a result, the surgical mask can be heated to inactivation temperature within a short time and with high uniformity. By Joule-heating the surgical mask with the temperature at 90 °C for 3 minutes, the inactivation of the SARS-CoV-2 showed an efficacy of 99.89%. Normal commodity surgical masks can be sterilized faster, more frequently, and efficiently against SARS-CoV-2 viruses and the new invariants.

preprint2015arXiv

Negative Magnetoresistance in Dirac Semimetal Cd3As2

A large negative magnetoresistance is anticipated in topological semimetals in the parallel magnetic and electric field configuration as a consequence of the nontrivial topological properties. The negative magnetoresistance is believed to demonstrate the chiral anomaly, a long-sought high-energy physics effect, in solid-state systems. Recent experiments reveal that Cd3As2, a Dirac topological semimetal, has the record-high mobility and exhibits positive linear magnetoresistance in the orthogonal magnetic and electric field configuration. However, the negative magnetoresistance in the parallel magnetic and electric field configuration remains unveiled. Here, we report the observation of the negative magnetoresistance in Cd3As2 microribbons in the parallel magnetic and electric field configuration as large as 66% at 50 K and even visible at room temperatures. The observed negative magnetoresistance is sensitive to the angle between magnetic and electrical field, robust against temperature, and dependent on the carrier density. We have found that carrier densities of our Cd3As2 samples obey an Arrhenius's law, decreasing from 3.0x10^17 cm^-3 at 300 K to 2.2x10^16 cm^-3 below 50 K. The low carrier densities result in the large values of the negative magnetoresistance. We therefore attribute the observed negative magnetoresistance to the chiral anomaly. Furthermore, in the perpendicular magnetic and electric field configuration a positive non-saturating linear magnetoresistance up to 1670% at 14 T and 2 K is also observed. This work demonstrates potential applications of topological semimetals in magnetic devices.

preprint2008arXiv

Diameter-Dependent Electron Mobility of InAs Nanowires

Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function of nanowire radius. From C-V characterizations, the densities of thermally-activated fixed charges and trap states on the surface of untreated (i.e., without any surface functionalization) nanowires are investigated while enabling the accurate measurement of the gate oxide capacitance; therefore, leading to the direct assessment of the field-effect mobility for electrons. The field-effect mobility is found to monotonically decrease as the radius is reduced to sub-10 nm, with the low temperature transport data clearly highlighting the drastic impact of the surface roughness scattering on the mobility degradation for miniaturized nanowires. More generally, the approach presented here may serve as a versatile and powerful platform for in-depth characterization of nanoscale, electronic materials.