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Researcher profile

Zhigang Song

Zhigang Song contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hallquant-ph

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Published work

4 published item(s)

preprint2022arXiv

Sensing the local magnetic environment through optically active defects in a layered magnetic semiconductor

Atomic-level defects in van der Waals (vdW) materials are essential building blocks for quantum technologies and quantum sensing applications. The layered magnetic semiconductor CrSBr is an outstanding candidate for exploring optically active defects owing to a direct gap in addition to a rich magnetic phase diagram including a recently hypothesized defect-induced magnetic order at low temperature. Here, we show optically active defects in CrSBr that are probes of the local magnetic environment. We observe spectrally narrow (1 meV) defect emission in CrSBr that is correlated with both the bulk magnetic order and an additional low temperature defect-induced magnetic order. We elucidate the origin of this magnetic order in the context of local and non-local exchange coupling effects. Our work establishes vdW magnets like CrSBr as an exceptional platform to optically study defects that are correlated with the magnetic lattice. We anticipate that controlled defect creation allows for tailor-made complex magnetic textures and phases with the unique ingredient of direct optical access.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Strain effects on Phase-Filling Singularities in Highly Doped n-Type Ge

Recently, Chi Xu et al. predicted the phase-filling singularities (PFS) in the optical dielectric function (ODF) of the highly doped $n$-type Ge and confirmed in experiment the PFS associated $E_{1}+Δ_{1}$ transition by advanced \textit{in situ} doping technology [Phys. Rev. Lett. 118, 267402 (2017)], but the strong overlap between $E_{1}$ and $E_{1}+Δ_{1}$ optical transitions made the PFS associated $E_{1}$ transition that occurs at the high doping concentration unobservable in their measurement. In this work, we investigate the PFS of the highly doped n-type Ge in the presence of the uniaxial and biaxial tensile strain along [100], [110] and [111] crystal orientation. Compared with the relaxed bulk Ge, the tensile strain along [100] increases the energy separation between the $E_{1}$ and $E_{1}+Δ_{1}$ transition, making it possible to reveal the PFS associated $E_{1}$ transition in optical measurement. Besides, the application of tensile strain along [110] and [111] offers the possibility of lowering the required doping concentration for the PFS to be observed, resulting in new additional features associated with $E_{1}+Δ_{1}$ transition at inequivalent $L$-valleys. These theoretical predications with more distinguishable optical transition features in the presence of the uniaxial and biaxial tensile strain can be more conveniently observed in experiment, providing new insights into the excited states in heavily doped semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Valley pseudospin in monolayer MoSi2N4 and MoSi2As4

For a long time, two-dimensional (2D) hexagonal MoS2 was proposed as a promising material for valleytronic system. However, the limited size of growth and low carrier motilities in MoS2 restrict its further application. Very recently, a new kind of hexagonal 2D MXene, MoSi2N4, was successfully synthesized with large size, excellent ambient stability, and considerable hole mobility. In this paper, based on the first-principles calculations, we predict that the valley-contrast properties can be realized in monolayer MoSi2N4 and its derivative MoSi2As4. Beyond the traditional two-level valleys, the valleys in monolayer MoSi2As4 are multiple-folded, implying a new valley dimension. Such multiple-folded valleys can be described by a three-band low-power Hamiltonian. This study presents the theoretical advance and the potential applications of monolayer MoSi2N4 and MoSi2As4 in valleytronic devices, especially multiple information processing.

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preprint2019arXiv

Measuring outcome correlation for spin-s Bell cat-state and geometric phase induced spin parity effect

In terms of quantum probability statistics the Bell inequality (BI) and its violation are extended to spin-$s$ entangled Schrödinger cat-state (called the Bell cat-state) with both parallel and antiparallel spin-polarizations. The BI is never ever violated for the measuring outcome probabilities evaluated over entire two-spin Hilbert space except the spin-$1/2$ entangled states. A universal Bell-type inequality (UBI) denoted by $p_{s}^{lc}\leq0$ is formulated with the local realistic model under the condition that the measuring outcomes are restricted in the subspace of spin coherent states. A spin parity effect is observed that the UBI can be violated only by the Bell cat-states of half-integer but not the integer spins. The violation of UBI is seen to be a direct result of non-trivial Berry phase between the spin coherent states of south- and north-pole gauges for half-integer spin, while the geometric phase is trivial for the integer spins. A maximum violation bound of UBI is found as $p_{s}^{\max}$=1, which is valid for arbitrary half-integer spin-$s$ states.

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