BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Meng Ye

Meng Ye appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.mes-hallComputer Visionphysics.comp-phcond-mat.dis-nncond-mat.othereess.IVMachine Learningquant-ph

Catalog footprint

What is connected

15works
9topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

15 published item(s)

preprint2022arXiv

Deep-Learning Density Functional Theory Hamiltonian for Efficient ab initio Electronic-Structure Calculation

The marriage of density functional theory (DFT) and deep learning methods has the potential to revolutionize modern computational materials science. Here we develop a deep neural network approach to represent DFT Hamiltonian (DeepH) of crystalline materials, aiming to bypass the computationally demanding self-consistent field iterations of DFT and substantially improve the efficiency of ab initio electronic-structure calculations. A general framework is proposed to deal with the large dimensionality and gauge (or rotation) covariance of DFT Hamiltonian matrix by virtue of locality and is realized by the message passing neural network for deep learning. High accuracy, high efficiency and good transferability of the DeepH method are generally demonstrated for various kinds of material systems and physical properties. The method provides a solution to the accuracy-efficiency dilemma of DFT and opens opportunities to explore large-scale material systems, as evidenced by a promising application to study twisted van der Waals materials.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

DeepRecon: Joint 2D Cardiac Segmentation and 3D Volume Reconstruction via A Structure-Specific Generative Method

Joint 2D cardiac segmentation and 3D volume reconstruction are fundamental to building statistical cardiac anatomy models and understanding functional mechanisms from motion patterns. However, due to the low through-plane resolution of cine MR and high inter-subject variance, accurately segmenting cardiac images and reconstructing the 3D volume are challenging. In this study, we propose an end-to-end latent-space-based framework, DeepRecon, that generates multiple clinically essential outcomes, including accurate image segmentation, synthetic high-resolution 3D image, and 3D reconstructed volume. Our method identifies the optimal latent representation of the cine image that contains accurate semantic information for cardiac structures. In particular, our model jointly generates synthetic images with accurate semantic information and segmentation of the cardiac structures using the optimal latent representation. We further explore downstream applications of 3D shape reconstruction and 4D motion pattern adaptation by the different latent-space manipulation strategies.The simultaneously generated high-resolution images present a high interpretable value to assess the cardiac shape and motion.Experimental results demonstrate the effectiveness of our approach on multiple fronts including 2D segmentation, 3D reconstruction, downstream 4D motion pattern adaption performance.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Basic formulation and first-principles implementation of nonlinear magneto-optical effects

First-principles calculation of nonlinear magneto-optical effects has become an indispensable tool to reveal the geometric and topological nature of electronic states and to understand light-matter interactions. While intriguingly rich physics could emerge in magnetic materials, further methodological developments are required to deal with time-reversal symmetry breaking, due to the degeneracy and gauge problems caused by symmetry and the low-frequency divergence problem in the existing calculation formalism. Here we present a gauge-covariant and low-frequency convergent formalism for the first-principles computation. Remarkably, this formalism generally works for both non-magnetic and magnetic materials with or without band degeneracy. Reliability and capability of our method are demonstrated by studying example materials (i.e., bilayers of MnBi$_2$Te$_4$ and CrI$_3$) and comparing with published results. Moreover, an importance correction term that ensures gauge covariance of degenerate states is derived, whose influence on physical responses is systematically checked. Our method enables computation of nonlinear magneto-optical effects in magnetic materials and paves the way for exploring rich physics created by the interplay of light and magnetism.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

High-Temperature Quantum Anomalous Hall Insulators in Lithium-Decorated Iron-Based Superconductor Materials

Quantum anomalous Hall (QAH) insulator is the key material to study emergent topological quantum effects, but its ultralow working temperature limits experiments. Here, by first-principles calculations, we find a family of stable two-dimensional (2D) structures generated by lithium decoration of layered iron-based superconductor materials FeX (X = S, Se, Te), and predict room-temperature ferromagnetic semiconductors together with large-gap high-Chern-number QAH insulators in the 2D materials. The extremely robust ferromagnetic order is induced by the electron injection from Li to Fe and stabilized by strong ferromagnetic kinetic exchange in the 2D Fe layer. While in the absence of spin-orbit coupling (SOC), the ferromagnetism polarizes the system into a half Dirac semimetal state protected by mirror symmetry, the SOC effect results in a spontaneous breaking of mirror symmetry and introduces a Dirac mass term, which creates QAH states with sizable gaps (several tens of meV) and multiple chiral edge modes. We also find a 3D QAH insulator phase featured by macroscopic number of chiral conduction channels in bulk LiOH-LiFeX. The findings open new opportunities to realize novel QAH physics and applications at high temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

PC-U Net: Learning to Jointly Reconstruct and Segment the Cardiac Walls in 3D from CT Data

The 3D volumetric shape of the heart's left ventricle (LV) myocardium (MYO) wall provides important information for diagnosis of cardiac disease and invasive procedure navigation. Many cardiac image segmentation methods have relied on detection of region-of-interest as a pre-requisite for shape segmentation and modeling. With segmentation results, a 3D surface mesh and a corresponding point cloud of the segmented cardiac volume can be reconstructed for further analyses. Although state-of-the-art methods (e.g., U-Net) have achieved decent performance on cardiac image segmentation in terms of accuracy, these segmentation results can still suffer from imaging artifacts and noise, which will lead to inaccurate shape modeling results. In this paper, we propose a PC-U net that jointly reconstructs the point cloud of the LV MYO wall directly from volumes of 2D CT slices and generates its segmentation masks from the predicted 3D point cloud. Extensive experimental results show that by incorporating a shape prior from the point cloud, the segmentation masks are more accurate than the state-of-the-art U-Net results in terms of Dice's coefficient and Hausdorff distance.The proposed joint learning framework of our PC-U net is beneficial for automatic cardiac image analysis tasks because it can obtain simultaneously the 3D shape and segmentation of the LV MYO walls.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Ferroelectricity in corundum derivatives

The search for new ferroelectric (FE) materials holds promise for broadening our understanding of FE mechanisms and extending the range of application of FE materials. Here we investigate a class of ABO3 and A2BB'O6 materials that can be derived from the X2O3 corundum structure by mixing two or three ordered cations on the X site. Most such corundum derivatives have a polar structure, but it is unclear whether the polarization is reversible, which is a requirement for a FE material. In this paper, we propose a method to study the FE reversal path of materials in the corundum derivative family. We first categorize the corundum derivatives into four classes and show that only two of these allow for the possibility of FE reversal. We then calculate the energy profile and energy barrier of the FE reversal path using first-principles density functional methods with a structural constraint. Furthermore, we identify several empirical measures that can provide a rule of thumb for estimating the energy barriers. Finally, the conditions under which the magnetic ordering is compatible with ferroelectricity are determined. These results lead us to predict several potentially new FE materials.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

All-Metallic Vertical Transistors Based on Stacked Dirac Materials

It is a persisting pursuit to use metal as a channel material in a field effect transistor. All metallic transistor can be fabricated from pristine semimetallic Dirac materials (such as graphene, silicene, and germanene), but the on/off current ratio is very low. In a vertical heterostructure composed by two Dirac materials, the Dirac cones of the two materials survive the weak interlayer van der Waals interaction based on density functional theory method, and electron transport from the Dirac cone of one material to the one of the other material is therefore forbidden without assistance of phonon because of momentum mismatch. First-principles quantum transport simulations of the all-metallic vertical Dirac material heterostructure devices confirm the existence of a transport gap of over 0.4 eV, accompanied by a switching ratio of over 104. Such a striking behavior is robust against the relative rotation between the two Dirac materials and can be extended to twisted bilayer graphene. Therefore, all-metallic junction can be a semiconductor and novel avenue is opened up for Dirac material vertical structures in high-performance devices without opening their band gaps.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Does P-type Ohmic Contact Exist in WSe2-metal Interfaces?

Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of 2D WSe2 devices. We present the first comparative study of the interfacial properties between ML/BL WSe2 and Sc, Al, Ag, Au, Pd, and Pt contacts by using ab initio energy band calculations with inclusion of the spin-orbital coupling (SOC) effects and quantum transport simulations. The interlayer coupling tends to reduce both the electron and hole Schottky barrier heights (SBHs) and alters the polarity for WSe2-Au contact, while the SOC chiefly reduces the hole SBH. In the absence of the SOC, Pd contact has the smallest hole SBH with a value no less than 0.22 eV. Dramatically, Pt contact surpasses Pd contact and becomes p-type Ohmic or quasi-Ohmic contact with inclusion of the SOC. Our study provides a theoretical foundation for the selection of favorable metal electrodes in ML/BL WSe2 devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

Although many prototype devices based on two-dimensional (2D) MoS2 have been fabricated and wafer scale growth of 2D MoS2 has been realized, the fundamental nature of 2D MoS2-metal contacts has not been well understood yet. We provide a comprehensive ab initio study of the interfacial properties of a series of monolayer (ML) and bilayer (BL) MoS2-metal contacts (metal = Sc, Ti, Ag, Pt, Ni, and Au). A comparison between the calculated and observed Schottky barrier heights (SBHs) suggests that many-electron effects are strongly suppressed in channel 2D MoS2 due to a charge transfer. The extensively adopted energy band calculation scheme fails to reproduce the observed SBHs in 2D MoS2-Sc interface. By contrast, an ab initio quantum transport device simulation better reproduces the observed SBH in the two types of contacts and highlights the importance of a higher level theoretical approach beyond the energy band calculation in the interface study. BL MoS2-metal contacts have a reduced SBH than ML MoS2-metal contacts due to the interlayer coupling and thus have a higher electron injection efficiency.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Magnetic charges and magnetoelectricity in hexagonal rare-earth manganites and ferrites

Magnetoelectric (ME) materials are of fundamental interest and show broad potential for technological applications. Commonly the dominant contribution to the ME response is the lattice-mediated one, which is proportional to both the Born electric charge $Z^{\rm e}$ and its analogue, the dynamical magnetic charge $Z^{\rm m}$. Our previous study has shown that exchange striction acting on noncollinear spins induces much larger magnetic charges than those that depend on spin-orbit coupling. The hexagonal manganites $R$MnO$_3$ and ferrites $R$FeO$_3$ ($R$ = Sc, Y, In, Ho-Lu) exhibit strong couplings between electric, magnetic and structural degrees of freedom, with the transition-metal ions in the basal plane antiferromagnetically coupled through super-exchange so as to form a 120$^\circ$ noncollinear spin arrangement. Here we present a theoretical study of the magnetic charges, and of the spin-lattice and spin-electronic ME constants, in these hexagonal manganites and ferrites, clarifying the conditions under which exchange striction leads to an enhanced $Z^{\rm m}$ values and anomalously large in-plane spin-lattice ME effects.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Monolayer Phosphorene-Metal Interfaces

Recently, phosphorene electronic and optoelectronic prototype devices have been fabricated with various metal electrodes. We systematically explore for the first time the contact properties of monolayer (ML) phosphorene with a series of commonly used metals (Al, Ag. Cu, Au, Cr, Ni, Ti, and Pd) via both ab initio electronic structure calculations and more reliable quantum transport simulations. Strong interactions are found between all the checked metals, with the energy band structure of ML phosphorene destroyed. In terms of the quantum transport simulations, ML phosphorene forms a n-type Schottky contact with Au, Cu, Cr, Al, and Ag electrodes, with electron Schottky barrier heights (SBHs) of 0.30, 0.34, 0.37, 0.51, and 0.52 eV, respectively, and p-type Schottky contact with Ti, Ni, and Pd electrodes, with hole SBHs of 0.30, 0.26, and 0.16 eV, respectively. These results are in good agreement with available experimental data. Our findings not only provide an insight into the ML phosphorene-metal interfaces but also help in ML phosphorene based device design.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Dynamical magnetic charges and linear magnetoelectricity

Magnetoelectric (ME) materials are of fundamental interest and have been investigated for their broad potential for technological applications. The search for, and eventually the theoretical design of, materials with large ME couplings present challenging issues. First-principles methods have only recently been developed to calculate the full ME response tensor $α$ including both electronic and ionic (i.e., lattice-mediated) contributions. The latter is proportional to both the Born dynamical electric charge $Z^{\rm e}$ and its analogue, the dynamical magnetic charge $Z^{\rm m}$. Here we present a theoretical study of the magnetic charge $Z^{\rm m}$ and the mechanisms that could enhance it. Using first-principles density-functional methods, we calculate the atomic $Z^{\rm m}$ tensors in $\rm{Cr_2O_3}$, a prototypical magnetoelectric, and in KITPite, a fictitious material that has previously been reported to show a strong ME response arising from exchange striction effects. Our results confirm that in $\rm{Cr_2O_3}$, the $Z^{\rm m}$ values and resulting ME responses arise only from spin-orbit coupling (SOC) and are therefore rather weak. In KITPite, by contrast, the exchange striction acting on the non-collinear spin structure induces much $Z^{\rm m}$ values that persist even when SOC is completely absent.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Graphdiyne-metal contacts and graphdiyne transistors

Graphdiyne is prepared on metal surface, and making devices out of it also inevitably involves contact with metals. Using density functional theory with dispersion correction, we systematically studied for the first time the interfacial properties of graphdiyne contacting with a series of metals (Al, Ag, Cu, Au, Ir, Pt, Ni, and Pd). Graphdiyne is in an n-type Ohmic or quasi-Ohmic contact with Al, Ag, and Cu, while it is in a Schottky contact with Au (at source/drain interface), Pd, Pt, Ni, and Ir (at source/drain-channel interface), with high Schottky barrier heights of 0.39, 0.21 (n-type), 0.30, 0.41, and 0.45 (p-type) eV, respectively. A graphdiyne field effect transistor (FET) with Al electrodes is simulated by using quantum transport calculations. This device exhibits an on-off ratio up to 104 and a very large on-state current of 1.3 * 104 mA/mm in a 10 nm channel length. Thus, a new prospect is opened up for graphdiyne in high performance nanoscale devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Quantum spin Hall insulators and quantum valley Hall insulators of BiX/SbX (X = H, F, Cl, and Br) monolayers with a record bulk band gap

Large bulk band gap is critical for application of the quantum spin Hall (QSH) insulator or two dimensional (2D) topological insulator (TI) in spintronic device operating at room temperature (RT). Based on the first-principles calculations, here we predict a group of 2D topological insulators BiX/SbX (X = H, F, Cl, and Br) monolayers with extraordinarily large bulk gaps from 0.32 to a record value of 1.08 eV. These giant-gaps are entirely due to the result of strong spin-orbit interaction related to px and py orbitals of Bi/Sb atoms around the two valley K and K' of honeycomb lattice, which is different significantly from the one consisted of pz orbital just like in graphene/silicene. The topological characteristic of BiX/SbX monolayers is confirmed by the calculated nontrivial Z2 index and an explicit construction of the low energy effective Hamiltonian in these systems. We show that the honeycomb structures of BiX monolayers remain stable even at a temperature of 600 K. These features make the giant-gap TIs BiX/SbX monolayers an ideal platform to realize many exotic phenomena and fabricate new quantum devices operating at RT. Furthermore, biased BiX/SbX monolayers become a quantum valley Hall insulator, showing valley-selective circular dichroism.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Tunable band gap in germanene by surface adsorption

Opening a sizable band gap in the zero-gap germanene without heavy loss of carrier mobility is a key issue for its application in nanoelectronic devices such as high-performance field effect transistors (FETs) operating at room temperature. Using the first-principles calculations, we find a band gap is opened at the Dirac point in germanene by single-side adsorption of alkali metal (AM) atoms. This band gap is tunable by varying the coverage and the species of AM atoms, ranging from 0.02 to 0.31 eV, and the maximum global band gap is 0.26 eV. Since the effective masses of electrons and holes in germanene near the Dirac point after surface adsorption (ranging from 0.005 to 0.106 me) are small, the carrier mobility is expected not to degrade much. Therefore germanene is a potential candidate of effective FET channel operating at room temperature upon surface adsorption.

0 citations0 reviewsNo code linkedOpen access