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Jinbo Yang

Jinbo Yang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallgr-qchep-thphysics.comp-phcond-mat.str-elhep-ph

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Published work

18 published item(s)

preprint2026arXiv

On Coordinate Singularities Induced by Trapping Horizons

The trapping (or apparent) horizon serves as a key tool for tracing the complete evolution of black holes. We investigate a class of coordinate singularities induced by such trapping (or apparent) horizons in a spherically symmetric, dynamic spacetime, which are distinct from the well-known coordinate singularities associated with the Killing horizon. In particular, we clarify the geometric structure of this coordinate singularity by means of the Kodama vector field, thereby avoiding unphysical artifacts. We further employ the evolving Ellis drainhole as an analytical model to illustrate key details of this phenomenon.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Bifurcation of a Topological Skyrmion String

Manipulation of three-dimensional (3D) topological objects is of both fundamental interest and practical importance in many branches of physics. Here, we show by spin dynamics simulations that the bifurcation of a 3D skyrmion string in a layered frustrated system could be induced by the dampinglike spin-orbit torque. The bifurcation of a skyrmion string happens when the skyrmion string carries a minimal topological charge of $Q=2$. We demonstrate that three types of bifurcations could be realized by applying different current injection geometries, which lead to the transformation from I-shaped skyrmion strings to Y-, X-, and O-shaped ones. Besides, different branches of a bifurcated skyrmion string may merge into an isolated skyrmion string spontaneously. The mechanism of bifurcation should be universal to any skyrmion strings with $Q\geq 2$ in the layered frustrated system and could offer a general approach to manipulate 3D stringlike topological objects for spintronic functions.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Inflation and dark matter after spontaneous Planck scale generation by hidden chiral symmetry breaking

Dynamical chiral symmetry breaking in a QCD-like hidden sector is used to generate the Planck mass and the electroweak scale including the heavy right-handed neutrino mass. A real scalar field transmits the energy scale of the hidden sector to the visible sectors, playing besides a role of inflaton in the early Universe while realizing a Higgs-inflation-like model. Our dark matter candidates are hidden pions that raise due to dynamical chiral symmetry breaking. They are produced from the decay of inflaton. Unfortunately, it will be impossible to directly detect them, because they are super heavy ($10^{9\,\sim\,12}$ GeV), and moreover the interaction with the visible sector is extremely suppressed.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Extreme Suppression of Antiferromagnetic Order and Critical Scaling in a Two-Dimensional Random Quantum Magnet

Sr$_2$CuTeO$_6$ is a square-lattice Néel antiferromagnet with superexchange between first-neighbor $S=1/2$ Cu spins mediated by plaquette centered Te ions. Substituting Te by W, the affected impurity plaquettes have predominantly second-neighbor interactions, thus causing local magnetic frustration. Here we report a study of Sr$_2$CuTe$_{1-x}$W$_x$O$_6$ using neutron diffraction and $μ$SR techniques, showing that the Néel order vanishes already at $x = 0.025 \pm 0.005$. We explain this extreme order suppression using a two-dimensional Heisenberg spin model, demonstrating that a W-type impurity induces a deformation of the order parameter that decays with distance as $1/r^2$ at temperature $T=0$. The associated logarithmic singularity leads to loss of order for any $x>0$. Order for small $x>0$ and $T>0$ is induced by weak interplane couplings. In the nonmagnetic phase of Sr$_2$CuTe$_{1-x}$W$_x$O$_6$, the $μ$SR relaxation rate exhibits quantum critical scaling with a large dynamic exponent, $z \approx 3$, consistent with a random-singlet state.

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preprint2021arXiv

Observation of the Orbital Rashba-Edelstein Magnetoresistance

We report the observation of magnetoresistance (MR) originating from the orbital angular momentum transport (OAM) in a Permalloy (Py) / oxidized Cu (Cu*) heterostructure: the orbital Rashba-Edelstein magnetoresistance. The angular dependence of the MR depends on the relative angle between the induced OAM and the magnetization in a similar fashion as the spin Hall magnetoresistance (SMR). Despite the absence of elements with large spin-orbit coupling, we find a sizable MR ratio, which is in contrast to the conventional SMR which requires heavy elements. By varying the thickness of the Cu* layer, we confirm that the interface is responsible for the MR, suggesting that the orbital Rashba-Edelstein effect is responsible for the generation of the OAM. Through Py thickness-dependence studies, we find that the effective values for the spin diffusion and spin dephasing lengths of Py are significantly larger than the values measured in Py / Pt bilayers, approximately by the factor of 2 and 4, respectively. This implies that another mechanism beyond the conventional spin-based scenario is responsible for the MR observed in Py / Cu* structures originated in a sizeable transport of OAM. Our findings not only unambiguously demonstrate the current-induced torque without using any heavy element via the OAM channel but also provide an important clue towards the microscopic understanding of the role that OAM transport can play for magnetization dynamics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Influence of Atomic Roughness at The Uncompensated Fe/CoO (111) Interface on Exchange Bias Effect

The effect of interface roughness of ferromagnetic and antiferromagnetic layers on exchange bias is still not well understood. In this report we have investigated the effect of surface roughness in (111)-oriented antiferromagnetic CoO films on exchange bias with ferromagnetic Fe grown on top. The surface roughness is controlled at the atomic scale, over a range below ~ 0.35 nm, by varying layer thickness of the CoO films. It is observed that both exchange bias field ($H_{E}$) and coercivity ($H_{C}$) extensively depend on the atomic scale roughness of the CoO (111) at the interface with Fe film. An opposite dependence of $H_{E}$ and $H_{C}$ on interface roughness was found, which was ascribed to partially compensated spin states induced by the atomic roughness at the fully uncompensated CoO (111) surfaces and was corroborated using the Monte Carlo simulations. Moreover, the onset temperature for $H_{C}$ is found to be up to ~ 80 K below the blocking temperature ($T_{B}$) and the temperature dependence of $H_{C}$ follows the power law with a critical exponent equal to one, which indicates that, in this system, $H_{C}$ is more of an interface-related property than $H_{E}$.

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preprint2019arXiv

Charged Ellis Wormhole and Black Bounce

By replacing the scalar $ϕ$ with $iϕ$ in the solution constructed in Ref\cite{Huang:2019lsl}, we obtain electrically-charged wormhole and black hole solutions in the Einstein-Maxwell-scalar theory, in which the scalar is a phantom field coupled to the Maxwell field non-minimally. Our solutions are simpler than the previously-known charged wormholes in the Einstein-Maxwell-dilaton theory in that both the scalar and the radius of the foliating sphere of our solutions are independent of electric charge. The wormhole solution has two asymptotically flat regions and reduces to Ellis wormhole when the charge is zero. We draw the embedding diagrams for the wormholes and demonstrate that the two sides are asymmetric. As the charge increases, horizons will appear, and the wormhole becomes a black hole, with no curvature singularity but a wormhole throat or a bounce. We analyze black hole thermodynamics and the causal structure. We also determine the photon spheres of both the wormhole and the black hole and discuss their observable characteristics.

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preprint2015arXiv

All-Metallic Vertical Transistors Based on Stacked Dirac Materials

It is a persisting pursuit to use metal as a channel material in a field effect transistor. All metallic transistor can be fabricated from pristine semimetallic Dirac materials (such as graphene, silicene, and germanene), but the on/off current ratio is very low. In a vertical heterostructure composed by two Dirac materials, the Dirac cones of the two materials survive the weak interlayer van der Waals interaction based on density functional theory method, and electron transport from the Dirac cone of one material to the one of the other material is therefore forbidden without assistance of phonon because of momentum mismatch. First-principles quantum transport simulations of the all-metallic vertical Dirac material heterostructure devices confirm the existence of a transport gap of over 0.4 eV, accompanied by a switching ratio of over 104. Such a striking behavior is robust against the relative rotation between the two Dirac materials and can be extended to twisted bilayer graphene. Therefore, all-metallic junction can be a semiconductor and novel avenue is opened up for Dirac material vertical structures in high-performance devices without opening their band gaps.

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preprint2015arXiv

Does P-type Ohmic Contact Exist in WSe2-metal Interfaces?

Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of 2D WSe2 devices. We present the first comparative study of the interfacial properties between ML/BL WSe2 and Sc, Al, Ag, Au, Pd, and Pt contacts by using ab initio energy band calculations with inclusion of the spin-orbital coupling (SOC) effects and quantum transport simulations. The interlayer coupling tends to reduce both the electron and hole Schottky barrier heights (SBHs) and alters the polarity for WSe2-Au contact, while the SOC chiefly reduces the hole SBH. In the absence of the SOC, Pd contact has the smallest hole SBH with a value no less than 0.22 eV. Dramatically, Pt contact surpasses Pd contact and becomes p-type Ohmic or quasi-Ohmic contact with inclusion of the SOC. Our study provides a theoretical foundation for the selection of favorable metal electrodes in ML/BL WSe2 devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

Although many prototype devices based on two-dimensional (2D) MoS2 have been fabricated and wafer scale growth of 2D MoS2 has been realized, the fundamental nature of 2D MoS2-metal contacts has not been well understood yet. We provide a comprehensive ab initio study of the interfacial properties of a series of monolayer (ML) and bilayer (BL) MoS2-metal contacts (metal = Sc, Ti, Ag, Pt, Ni, and Au). A comparison between the calculated and observed Schottky barrier heights (SBHs) suggests that many-electron effects are strongly suppressed in channel 2D MoS2 due to a charge transfer. The extensively adopted energy band calculation scheme fails to reproduce the observed SBHs in 2D MoS2-Sc interface. By contrast, an ab initio quantum transport device simulation better reproduces the observed SBH in the two types of contacts and highlights the importance of a higher level theoretical approach beyond the energy band calculation in the interface study. BL MoS2-metal contacts have a reduced SBH than ML MoS2-metal contacts due to the interlayer coupling and thus have a higher electron injection efficiency.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Monolayer Phosphorene-Metal Interfaces

Recently, phosphorene electronic and optoelectronic prototype devices have been fabricated with various metal electrodes. We systematically explore for the first time the contact properties of monolayer (ML) phosphorene with a series of commonly used metals (Al, Ag. Cu, Au, Cr, Ni, Ti, and Pd) via both ab initio electronic structure calculations and more reliable quantum transport simulations. Strong interactions are found between all the checked metals, with the energy band structure of ML phosphorene destroyed. In terms of the quantum transport simulations, ML phosphorene forms a n-type Schottky contact with Au, Cu, Cr, Al, and Ag electrodes, with electron Schottky barrier heights (SBHs) of 0.30, 0.34, 0.37, 0.51, and 0.52 eV, respectively, and p-type Schottky contact with Ti, Ni, and Pd electrodes, with hole SBHs of 0.30, 0.26, and 0.16 eV, respectively. These results are in good agreement with available experimental data. Our findings not only provide an insight into the ML phosphorene-metal interfaces but also help in ML phosphorene based device design.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Silicene Nanomesh

Similar to graphene, zero band gap limits the application of silicene in nanoelectronics despite of its high carrier mobility. By using first-principles calculations, we reveal that a band gap is opened in silicene nanomesh (SNM) when the width W of the wall between the neighboring holes is even. The size of the band gap increases with the reduced W and has a simple relation with the ratio of the removed Si atom and the total Si atom numbers of silicene. Quantum transport simulation reveals that the sub-10 nm single-gated SNM field effect transistors show excellent performance at zero temperature but such a performance is greatly degraded at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Does the Dirac Cone Exist in Silicene on Metal Substrates?

Absence of the Dirac cone due to a strong band hybridization is revealed to be a common feature for epitaxial silicene on metal substrates according to our first-principles calculations for silicene on Ir, Cu, Mg, Au, Pt, Al, and Ag substrates. The destroyed Dirac cone of silicene, however, can be effectively restored with linear or parabolic dispersion by intercalating alkali metal atoms between silicene and the metal substrates, offering an opportunity to study the intriguing properties of silicene without further transfer of silicene from the metal substrates.

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preprint2014arXiv

Graphdiyne-metal contacts and graphdiyne transistors

Graphdiyne is prepared on metal surface, and making devices out of it also inevitably involves contact with metals. Using density functional theory with dispersion correction, we systematically studied for the first time the interfacial properties of graphdiyne contacting with a series of metals (Al, Ag, Cu, Au, Ir, Pt, Ni, and Pd). Graphdiyne is in an n-type Ohmic or quasi-Ohmic contact with Al, Ag, and Cu, while it is in a Schottky contact with Au (at source/drain interface), Pd, Pt, Ni, and Ir (at source/drain-channel interface), with high Schottky barrier heights of 0.39, 0.21 (n-type), 0.30, 0.41, and 0.45 (p-type) eV, respectively. A graphdiyne field effect transistor (FET) with Al electrodes is simulated by using quantum transport calculations. This device exhibits an on-off ratio up to 104 and a very large on-state current of 1.3 * 104 mA/mm in a 10 nm channel length. Thus, a new prospect is opened up for graphdiyne in high performance nanoscale devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Low-Energy Effective Hamiltonian for Giant-Gap Quantum Spin Hall Insulators in Honeycomb X-Hydride/Halide (X=N-Bi) Monolayers

Using the tight-binding method in combination with first-principles calculations, we systematically derive a low-energy effective Hilbert subspace and Hamiltonian with spin-orbit coupling for two-dimensional hydrogenated and halogenated group-V monolayers. These materials are proposed to be giant-gap quantum spin Hall insulators with record huge bulk band gaps opened by the spin-orbit coupling at the Dirac points, e.g., from 0.74 to 1.08 eV in Bi\textit{X} (\textit{X} = H, F, Cl, and Br) monolayers. We find that the low-energy Hilbert subspace mainly consists of $p_{x}$ and $p_{y}$ orbitals from the group-V elements, and the giant first-order effective intrinsic spin-orbit coupling is from the on-site spin-orbit interaction. These features are quite distinct from those of group-IV monolayers such as graphene and silicene. There, the relevant orbital is $p_z$ and the effective intrinsic spin-orbit coupling is from the next-nearest-neighbor spin-orbit interaction processes. These systems represent the first real 2D honeycomb lattice materials in which the low-energy physics is associated with $p_{x}$ and $p_{y}$ orbitals. A spinful lattice Hamiltonian with an on-site spin-orbit coupling term is also derived, which could facilitate further investigations of these intriguing topological materials.

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preprint2014arXiv

Quantum spin Hall insulators and quantum valley Hall insulators of BiX/SbX (X = H, F, Cl, and Br) monolayers with a record bulk band gap

Large bulk band gap is critical for application of the quantum spin Hall (QSH) insulator or two dimensional (2D) topological insulator (TI) in spintronic device operating at room temperature (RT). Based on the first-principles calculations, here we predict a group of 2D topological insulators BiX/SbX (X = H, F, Cl, and Br) monolayers with extraordinarily large bulk gaps from 0.32 to a record value of 1.08 eV. These giant-gaps are entirely due to the result of strong spin-orbit interaction related to px and py orbitals of Bi/Sb atoms around the two valley K and K' of honeycomb lattice, which is different significantly from the one consisted of pz orbital just like in graphene/silicene. The topological characteristic of BiX/SbX monolayers is confirmed by the calculated nontrivial Z2 index and an explicit construction of the low energy effective Hamiltonian in these systems. We show that the honeycomb structures of BiX monolayers remain stable even at a temperature of 600 K. These features make the giant-gap TIs BiX/SbX monolayers an ideal platform to realize many exotic phenomena and fabricate new quantum devices operating at RT. Furthermore, biased BiX/SbX monolayers become a quantum valley Hall insulator, showing valley-selective circular dichroism.

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preprint2014arXiv

Tunable Valley Polarization and Valley Orbital Magnetic Moment Hall Effect in Honeycomb Systems with Broken Inversion Symmetry

In this Letter, a tunable valley polarization is investigated for honeycomb systems with broken inversion symmetry such as transition-metal dichalcogenide MX2 (M = Mo, W; X = S, Se) monolayers through elliptical pumping. As compared to circular pumping, elliptical pumping is more universal and effective method to create coherent valley polarization. When two valleys of MX2 monolayers are doped or polarized, a novel anomalous valley orbital magnetic moment Hall effect driven by opposite Berry curvatures at different valleys is predicted and can generate orbital magnetic moment current without the accompaniment of a charge current, opening a new avenue for exploration of valleytronics and orbitronics. Valley orbital magnetic moment Hall effect is expected to obscure spin Hall effect and is tunable under elliptical pumping.

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preprint2013arXiv

Wide temperature span of entropy change in first-order metamagnetic MnCo1-xFexSi

The crystal structure and magnetic properties of MnCoxFe1-xSi (x=0-0.5) compounds were investigated. With increasing Fe content, the unit cell changes anisotropically and the magnetic property evolves gradually: Curie temperature decreases continuously, the first-order metamagnetic transition from a low-temperature helical antiferromagnetic state to a high-temperature ferromagnetic state disappears gradually and then a spin-glass-like state and another antiferromagnetic state emerge in the low temperature region. The Curie transition leads to a moderate conventional entropy change. The metamagnetic transition not only yields a larger negative magnetocaloric effect at lower applied fields than in MnCoSi but also produces a very large temperature span (103 K for H=5 T) of delta S(T), which results in a large refrigerant capacity. These phenomena were explained in terms of crystal structure change and magnetoelastic coupling mechanism. The low-cost MnCo1-xFexSi compounds are promising candidates for near room temperature magnetic refrigeration applications because of the large isothermal entropy change and the wide working temperature span.

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