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Zhifeng Ren

Zhifeng Ren appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.otherphysics.app-phphysics.optics

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Published work

15 published item(s)

preprint2022arXiv

Persistent hot carrier diffusion in boron arsenide single crystals imaged by ultrafast electron microscopy

Cubic boron arsenide (BAs) is promising for microelectronics thermal management due to its high thermal conductivity. Recently, its potential as an optoelectronic material is also being explored. However, it remains challenging to measure its photocarrier transport properties due to small sizes of available high-quality crystals. Here, we use scanning ultrafast electron microscopy (SUEM) to directly visualize the diffusion of photoexcited charge carriers in BAs single crystals. Surprisingly, we observed ambipolar diffusion at low optical fluence with persistent hot carrier dynamics for above 200 picoseconds, which can be attributed to the large frequency gap between acoustic and optical phonons, the same feature that is responsible for the high thermal conductivity. At higher optical fluence, we observed spontaneous electron-hole separation. Our results show BAs is an attractive optoelectronic material combining high thermal conductivity and excellent photocarrier transport properties. Our study also demonstrates the capability of SUEM to probe photocarrier transport in emerging materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Half-Heusler thermoelectric materials: NMR studies

We report $^{59}$Co, $^{93}$Nb, and $^{121}$Sb nuclear magnetic resonance (NMR) measurements combined with density functional theory (DFT) calculations on a series of half-Heusler semiconductors, including NbCoSn, ZrCoSb, TaFeSb and NbFeSb, to better understand their electronic properties and general composition-dependent trends. These materials are of interest as potentially high efficiency thermoelectric materials. Compared to the other materials, we find that ZrCoSb tends to have a relatively large amount of local disorder, apparently antisite defects. This contributes to a small excitation gap corresponding to an impurity band near the band edge. In NbCoSn and TaFeSb, Curie-Weiss-type behavior is revealed, which indicates a small density of interacting paramagnetic defects. Very large paramagnetic chemical shifts are observed associated with a Van Vleck mechanism due to closely spaced $d$ bands splitting between the conduction and valence bands. Meanwhile, DFT methods were generally successful in reproducing the chemical shift trend for these half-Heusler materials, and we identify an enhancement of the larger-magnitude shifts, which we connect to electron interaction effects. The general trend is connected to changes in $d$-electron hybridization across the series.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Ultralow thermal conductivity from transverse acoustic phonon suppression in distorted crystalline α-MgAgSb

Low thermal conductivity is favorable for preserving the temperature gradient between the two ends of a thermoelectric material in order to ensure continuous electron current generation. In high-performance thermoelectric materials, there are two main low thermal conductivity mechanisms: the phonon anharmonic in PbTe and SnSe and phonon scattering resulting from the dynamic disorder in AgCrSe2 and CuCrSe2, which have been successfully revealed by inelastic neutron scattering. Using neutron scattering and ab initio calculations, we report here a mechanism of static local structure distortion combined with phonon-anharmonic-induced ultralow lattice thermal conductivity in α-MgAgSb. Since the transverse acoustic phonons are almost fully scattered by the compound's intrinsic distorted rocksalt sublattice, the heat is mainly transported by the longitudinal acoustic phonons. The ultralow thermal conductivity in α-MgAgSb is attributed to its atomic dynamics being altered by the structure distortion, which presents a possible microscopic route to enhance the performance of similar thermoelectric materials.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Optical properties of cubic boron arsenide

The ultrahigh thermal conductivity of boron arsenide makes it a promising material for next-generation electronics and optoelectronics. In this work, we report measured optical properties of cubic boron arsenide crystals including the complex dielectric function, refractive index, and absorption coefficient in the ultraviolet, visible, and near-infrared wavelength range. The data were collected at room temperature using spectroscopic ellipsometry as well as transmission and reflection spectroscopy. We further calculate the optical response using density functional and many-body perturbation theory, considering quasiparticle and excitonic corrections. The computed values for the direct and indirect band gaps (4.25 eV and 2.07 eV) agree well with the measured results (4.12 eV and 2.02 eV). Our findings contribute to the effort of using boron arsenide in novel electronic and optoelectronic applications that take advantage of its demonstrated ultrahigh thermal conductivity and predicted high ambipolar carrier mobility.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Photoluminescence mapping and time-domain thermo-photoluminescence for rapid imaging and measurement of thermal conductivity of boron arsenide

Cubic boron arsenide (BAs) is attracting greater attention due to the recent experimental demonstration of ultrahigh thermal conductivity \k{appa} above 1000 W/mK. However, its bandgap has not been settled and a simple yet effective method to probe its crystal quality is missing. Furthermore, traditional \k{appa} measurement methods are destructive and time consuming, thus they cannot meet the urgent demand for fast screening of high \k{appa} materials. After we experimentally established 1.82 eV as the indirect bandgap of BAs and observed room-temperature band-edge photoluminescence, we developed two new optical techniques that can provide rapid and non-destructive characterization of \k{appa} with little sample preparation: photoluminescence mapping (PL-mapping) and time-domain thermo-photoluminescence (TDTP). PL-mapping provides nearly real-time image of crystal quality and \k{appa} over mm-sized crystal surfaces; while TDTP allows us to pick up any spot on the sample surface and measure its \k{appa} using nanosecond laser pulses. These new techniques reveal that the apparent single crystals are not only non-uniform in \k{appa}, but also are made of domains of very distinct \k{appa}. Because PL-mapping and TDTP are based on the band-edge PL and its dependence on temperature, they can be applied to other semiconductors, thus paving the way for rapid identification and development of high-\k{appa} semiconducting materials.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Generation and Detection of Surface Plasmon Polaritons by Transition Metal Dichalcogenides for Chip-level Electronic-Photonic Integrated Circuits

The monolithic integration of electronics and photonics has attracted enormous attention due to its potential applications. However, the realization of such hybrid circuits has remained a challenge because it requires optical communication at nanometer scales. A major challenge to this integration is the identification of a suitable material. After discussing the material aspect of the challenge, we identified atomically thin transition metal dichalcogenides (TMDs) as a perfect material platform to implement the circuit. The selection of TMDs is based on their very distinct property: monolayer TMDs are able to emit and absorb light at the same wavelength determined by direct exciton transitions. To prove the concept, we fabricated simple devices consisting of silver nanowires as plasmonic waveguides and monolayer TMDs as active optoelectronic media. Using photoexcitation, direct optical imaging and spectral analysis, we demonstrated generation and detection of surface plasmon polaritons by monolayer TMDs. Regarded as novel materials for electronics and photonics, transition metal dichalcogenides are expected to find new applications in next generation integrated circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Multiferroic materials and magnetoelectric physics: symmetry, entanglement, excitation, and topology

Multiferroics are those materials with more than one ferroic order, and magnetoelectricity refers to the mutual coupling between magnetism and electricity. The discipline of multiferroicity has never been so highly active as that in the first decade of the twenty-first century, and it has become one of the hottest disciplines of condensed matter physics and materials science. A series of milestones and steady progress in the past decade have enabled our understanding of multiferroic physics substantially comprehensive and profound, which is further pushing forward the research frontier of this exciting area. The availability of more multiferroic materials and improved magnetoelectric performance are approaching to make the applications within reach. While seminal review articles covering the major progress before 2010 are available, an updated review addressing the new achievements since that time becomes imperative. In this review, following a concise outline of the basic knowledge of multiferroicity and magnetoelectricity, we summarize the important research activities on multiferroics, especially magnetoelectricity and related physics in the last six years. We consider not only single-phase multiferroics but also multiferroic heterostructures. We address the physical mechanisms regarding magnetoelectric coupling so that the backbone of this divergent discipline can be highlighted. A series of issues on lattice symmetry, magnetic ordering, ferroelectricity generation, electromagnon excitations, multiferroic domain structure and domain wall dynamics, and interfacial coupling in multiferroic heterostructures, will be revisited in an updated framework of physics. In addition, several emergent phenomena and related physics, including magnetic skyrmions and generic topological structures associated with magnetoelectricity will be discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Optimizing thermoelectric performances of low-temperature SnSe compounds by electronic structure design

Recently SnSe compound was reported to have a peak thermoelectric figure-5 of-merit (ZT) of 2.62 at 923 K, but the ZT values at temperatures below 750 K are relatively low. In this work, the electronic structures of SnSe are calculated using the density functional theory, and the electro- and thermo-transport properties upon varying chemical potential (or carrier density) are evaluated by the semi-classic Boltzmann transport theory, showing that the calculated ZT values along the a10 and c-axes below 675 K are in agreement with reported values, but that along the b-axis can be as high as 2.57 by optimizing the carrier concentration to ~3.6*1019 cm-3. It is revealed that a mixed ionic-covalent bonding and heavy-light band overlapping near the valence band are the reasons for the higher thermoelectric performance

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Anomalous CDW ground state in Cu$_2$Se: a wave-like fluctuation of $\it{dc}$ I-V curve near 50 K

A charge density wave (CDW) ground state is observed in polycrystalline Cu$_2$Se below 125 K, which corresponds to an energy gap of 40.9 meV and an electron-phonon coupling constant of 0.6. Due to the polycrystalline structure, the Peierls transition process has been expanded to a wide temperature range from 90 to 160 K. The Hall carrier concentration shows a continuous decrease from 2.1$\times$10$^{20}$ to 1.6$\times$10$^{20}$ cm$^{-3}$ in the temperature range from 160 K to 80 K, while almost unchanged above 160 K and below 90 K. After entering the CDW ground state, a wave-like fluctuation was observed in the I-V curve near 50 K, which exhibits as a periodic negative differential resistivity in an applied electric field due to the current. We also investigated the doping effect of Zn, Ni, and Te on the CDW ground state. Both Zn and Ni doped Cu$_2$Se show a CDW character with increased energy gap and electron-phonon coupling constant, but no notable Peierls transition was observed in Te doped Cu$_2$Se. Similar wave-like I-V curve was also seen in Cu$_{1.98}$Zn$_{0.02}$Se near 40 K. The regular fluctuation in $\it{dc}$ I-V curve was not magnetic field sensitive, but temperature and sample size sensitive.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Thermoelectric Properties of Nanocomposite Heavy Fermion CeCu6

Samples of heavy fermion compound CeCu6 were prepared by hot-press technique. Temperature-dependent (5-300 K) thermoelectric transport properties of the samples were measured. The dimensionless figure-of-merit (ZT) was optimized by varying the hot-pressing temperature. Our measurements of thermal conductivity show that the lowest hot pressing temperature (450 C) produces the lowest thermal conductivity. Electrical resistivity increases significantly while the Seebeck coefficient decreases with decrease in the hot pressing temperature. As the hot-pressing temperature decreases, electronic contribution to the total thermal conductivity decreased more rapidly than the lattice contribution did. As a result, for lower hot-pressing temperature the gain in thermal conductivity reduction was offset by the loss in power factor. Our ZT calculations show a broad peak with a maximum value of 0.024 at 60 K for the sample hot pressed at 800 C. The pronounced low-temperature ZT peak emphasizes the importance of this heavy fermion system as a potential p-type thermoelectric for solid state cooling applications.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Topological Effect of Surface Plasmon Excitation in Gapped Isotropic Topological Insulator Nanowires

We present a theoretical investigation of the surface plasmon (SP) at the interface between topologically non-trivial cylindrical core and topological-trivial surrounding material, from the axion electrodynamics and modified constitutive relations. We find that the topological effect always leads to a red-shift of SP energy, while the energy red-shift decreases monotonically as core diameter decreases. A qualitative picture based on classical perturbation theory is given to explain these phenomena, from which we also infer that in order to enhance the shift, the difference between the inverse of dielectric constants of two materials shall be increased. We also find that the surrounding magnetic environment suppresses the topological effect. All these features can be well described by a simple ansatz surface wave, which is in good agreement with full electromagnetic eigenmodes. In addition, bulk plasmon energy at ω_{P}=17.5\pm0.2eV for semiconducting Bi2Se3 nanoparticle is observed from high-resolution Electron Energy Loss Spectrum Image measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Anharmonic Phonons and Magnons in BiFeO3

The phonon density of states (DOS) and magnetic excitation spectrum of polycrystalline BiFeO$_3$ were measured for temperatures $200 \leq T \leq 750\,$K, using inelastic neutron scattering (INS). Our results indicate that the magnetic spectrum of BiFeO$_3$ closely resembles that of similar Fe perovskites, such as LaFeO$_3$, despite the cycloid modulation in BiFeO$_3$. We do not find any evidence for a spin gap. A strong $T$-dependence of the phonon DOS was found, with a marked broadening of the whole spectrum, providing evidence of strong anharmonicity. This anharmonicity is corroborated by large-amplitude motions of Bi and O ions observed with neutron diffraction. These results highlight the importance of spin-phonon coupling in this material.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Inelastic neutron scattering study of phonon density of states in nanostructured Si1xGex thermoelectrics

Inelastic neutron scattering measurements are utilized to explore relative changes in the generalized phonon density of states of nanocrystalline Si1xGex thermoelectric materials prepared via ball milling and hot-pressing techniques. Dynamic signatures of Ge clustering can be inferred from the data by referencing the resulting spectra to a density functional theoretical model assuming homogeneous alloying via the virtual-crystal approximation. Comparisons are also presented between as-milled Si nanopowder and bulk, polycrystalline Si where a preferential low-energy enhancement and lifetime broadening of the phonon density of states appear in the nanopowder. Negligible differences are however observed between the phonon spectra of bulk Si and hot pressed, nanostructured Si samples suggesting that changes to the single phonon dynamics above 4 meV play only a secondary role in the modified heat conduction of this compound.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Phonon Drag Effect in Nanocomposite FeSb2

We study the temperature dependence of thermoelectric transport properties of four FeSb2 nanocomposite samples with different grain sizes. The comparison of the single crystals and nanocomposites of varying grain size indicates the presence of substantial phonon drag effects in this system contributing to a large Seebeck coefficient at low temperature. As the grain size decreases, the increased phonon scattering at the grain boundaries leads to a suppression of the phonon-drag effect, resulting in a much smaller peak value of the Seebeck coefficient in the nanostructured bulk materials. As a consequence, the ZT values are not improved significantly even though the thermal conductivity is drastically reduced.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Transport Properties of Ni, Co, Fe, Mn Doped Cu0.01Bi2Te2.7Se0.3 for Thermoelectric Device Applications

Bi2Te3 based thermoelectric devices typically use a nickel layer as a diffusion barrier to block the diffusion of solder or copper atoms from the electrode into the thermoelectric material. Previous studies have shown degradation in the efficiency of these thermoelectric devices may be due to the diffusion of the barrier layer into the thermoelectric material. In this work Ni, Co, Fe, and Mn are intentionally doped into Cu0.01Bi2Te2.7Se0.3 in order to understand their effects on the thermoelectric material. Thermoelectric transport properties including the Seebeck coefficient, thermal conductivity, electrical resistivity, carrier concentration, and carrier mobility of Cu0.01Bi2Te2.7Se0.3 doped with 2 atomic percent M (M=Ni, Co, Fe, Mn) as Cu0.01Bi2Te2.7Se0.3M0.02, are studied in a temperature range of 5-525 K.

0 citations0 reviewsNo code linkedOpen access