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Zhenxing Wang

Zhenxing Wang contributes to research discovery and scholarly infrastructure.

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Published work

7 published item(s)

preprint2026arXiv

Toward Efficient Spiking Transformers: Synapse Pruning Meets Synergistic Learning-Based Compensation

As a foundational architecture of artificial intelligence models, Transformer has been recently adapted to spiking neural networks with promising performance across various tasks. However, existing spiking Transformer(ST)-based models require a substantial number of parameters and incur high computational costs, thus limiting their deployment in resource-constrained environments. To address these challenges, we propose combining synapse pruning with a synergistic learning-based compensation strategy to derive lightweight ST-based models. Specifically, two types of tailored pruning strategies are introduced to reduce redundancy in the weight matrices of ST blocks: an unstructured $\mathrm{L_{1}P}$ method to induce sparse representations, and a structured DSP method to induce low-rank representations. In addition, we propose an enhanced spiking neuron model, termed the synergistic leaky integrate-and-fire (sLIF) neuron, to effectively compensate for model pruning through synergistic learning between synaptic and intrinsic plasticity mechanisms. Extensive experiments on benchmark datasets demonstrate that the proposed methods significantly reduce model size and computational overhead while maintaining competitive performance. These results validate the effectiveness of the proposed pruning and compensation strategies in constructing efficient and high-performing ST-based models.

preprint2022arXiv

Evidence for local spots of viscous electron flow in graphene at moderate mobility

Dominating electron-electron scattering enables viscous electron flow exhibiting hydrodynamic current density patterns such as Poiseuille profiles or vortices. The viscous regime has recently been observed in graphene by non-local transport experiments and mapping of the Poiseuille profile. Here, we probe the current-induced surface potential maps of graphene field effect transistors with moderate mobility using scanning probe microscopy at room temperature. We discover micron-sized large areas appearing close to charge neutrality that show current induced electric fields opposing the externally applied field. By estimating the local scattering lengths from the gate dependence of local in-plane electric fields, we find that electron-electron scattering dominates in these areas as expected for viscous flow. Moreover, we suppress the inverted fields by artificially decreasing the electron-disorder scattering length via mild ion bombardment. These results imply that viscous electron flow is omnipresent in graphene devices, even at moderate mobility.

preprint2022arXiv

Zero Bias Power Detector Circuits based on MoS$_2$ Field Effect Transistors on Wafer-Scale Flexible Substrates

We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS$_2$ field effect transistors (FETs). The MoS$_2$ FETs are fabricated using a wafer-scale process on 8 $μ$m thick polyimide film, which in principle serves as flexible substrate. The performances of two CVD-MoS$_2$ sheets, grown with different processes and showing different thicknesses, are analyzed and compared from the single device fabrication and characterization steps to the circuit level. The power detector prototypes exploit the nonlinearity of the transistors above the cut-off frequency of the devices. The proposed detectors are designed employing a transistor model based on measurement results. The fabricated circuits operate in Ku-band between 12 and 18 GHz, with a demonstrated voltage responsivity of 45 V/W at 18 GHz in the case of monolayer MoS2 and 104 V/W at 16 GHz in the case of multilayer MoS$_2$, both achieved without applied DC bias. They are the best performing power detectors fabricated on flexible substrate reported to date. The measured dynamic range exceeds 30 dB outperforming other semiconductor technologies like silicon complementary metal oxide semiconductor (CMOS) circuits and GaAs Schottky diodes.

preprint2020arXiv

Cascade Convolutional Neural Network for Image Super-Resolution

With the development of the super-resolution convolutional neural network (SRCNN), deep learning technique has been widely applied in the field of image super-resolution. Previous works mainly focus on optimizing the structure of SRCNN, which have been achieved well performance in speed and restoration quality for image super-resolution. However, most of these approaches only consider a specific scale image during the training process, while ignoring the relationship between different scales of images. Motivated by this concern, in this paper, we propose a cascaded convolution neural network for image super-resolution (CSRCNN), which includes three cascaded Fast SRCNNs and each Fast SRCNN can process a specific scale image. Images of different scales can be trained simultaneously and the learned network can make full use of the information resided in different scales of images. Extensive experiments show that our network can achieve well performance for image SR.

preprint2020arXiv

Flexible One-Dimensional Metal-Insulator-Graphene Diode

In this work, a novel one-dimensional geometry for metal-insulator-graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1D edge of Al2O3-encapsulated graphene with TiO2 that acts as barrier material. The diodes demonstrate ultra-high current density since the transport in the graphene and through the barrier is in plane. The geometry delivers very low capacitive coupling between the cathode and anode of the diode, which shows frequency response up to 100 GHz and ensures potential high frequency performance up to 2.4 THz. The 1D-MIG diodes are demonstrated to function uniformly and stable under bending conditions down to 6.4 mm bending radius on flexible substrate.

preprint2019arXiv

Gate-tunable graphene-based Hall sensors on flexible substrates with increased sensitivity

We demonstrate a novel concept for operating graphene-based Hall sensors using an alternating current (AC) modulated gate voltage, which provides three important advantages compared to Hall sensors under static operation: 1) The sensor sensitivity can be doubled by utilizing both n- and p-type conductance. 2) A static magnetic field can be read out at frequencies in the kHz range, where the 1/f noise is lower compared to the static case. 3) The off-set voltage in the Hall signal can be reduced. This significantly increases the signal-to-noise ratio compared to Hall sensors without a gate electrode. A minimal detectable magnetic field Bmin down to 290 nT/sqrt(Hz) and sensitivity up to 0.55 V/VT was found for Hall sensors fabricated on flexible foil. This clearly outperforms state-of-the-art flexible Hall sensors and is comparable to the values obtained by the best rigid III/V semiconductor Hall sensors.

preprint2019arXiv

Large-signal model of the Metal-Insulator-Graphene diode targeting RF applications

We present a circuit-design compatible large-signal compact model of metal-insulator-graphene (MIG) diodes for describing its dynamic response for the first time. The model essentially consists of a voltage-dependent diode intrinsic capacitance coupled with a static voltage-dependent current source, the latter accounts for the vertical electron transport from/towards graphene, which has been modeled by means of the Dirac-thermionic electron transport theory through the insulator barrier. Importantly, the image force effect has been found to play a key role in determining the barrier height, so it has been incorporated into the model accordingly. The resulting model has been implemented in Verilog A to be used in existing circuit simulators and benchmarked against an experimental 6-nm TiO2 barrier MIG diode working as a power detector.