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Martin Otto

Martin Otto contributes to research discovery and scholarly infrastructure.

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Published work

7 published item(s)

preprint2022arXiv

Direct view of phonon dynamics in atomically thin MoS$_{2}$

Transition metal dichalcogenide monolayers and heterostructures are highly tunable material systems that provide excellent models for physical phenomena at the two-dimensional (2D) limit. While most studies to date have focused on electrons and electron-hole pairs, phonons also play essential roles. Here, we apply ultrafast electron diffraction and diffuse scattering to directly quantify, with time and momentum resolution, electron-phonon coupling (EPC) in monolayer molybdenum disulfide (MoS$_{2}$) and phonon transport from the monolayer to a silicon nitride (Si$_3$N$_4$) substrate. Optically generated hot carriers result in a profoundly anisotropic distribution of phonons in the monolayer on the $\sim$ 5 ps time scale. A quantitative comparison with ab-initio ultrafast dynamics simulations reveals the essential role of dielectric screening in weakening EPC. Thermal transport from the monolayer to the substrate occurs with the phonon system far from equilibrium. While screening in 2D is known to strongly affect equilibrium properties, our findings extend this understanding to the dynamic regime.

preprint2022arXiv

Plasma-enhanced atomic layer deposition of Al$_2$O$_3$ on graphene using monolayer hBN as interfacial layer

The deposition of dielectric materials on graphene is one of the bottlenecks for unlocking the potential of graphene in electronic applications. In this paper we demonstrate the plasma enhanced atomic layer deposition of 10 nm thin high quality Al$_2$O$_3$ on graphene using a monolayer of hBN as protection layer. Raman spectroscopy was performed to analyze possible structural changes of the graphene lattice caused by the plasma deposition. The results show that a monolayer of hBN in combination with an optimized deposition process can effectively protect graphene from damage, while significant damage was observed without an hBN layer. Electrical characterization of double gated graphene field effect devices confirms that the graphene did not degrade during the plasma deposition of Al$_2$O$_3$. The leakage current densities were consistently below 1 nA/mm for electric fields across the insulators of up to 8 MV/cm, with irreversible breakdown happening above. Such breakdown electric fields are typical for Al$_2$O$_3$ and can be seen as an indicator for high quality dielectric films.

preprint2022arXiv

Role of substrate surface morphology on the performance of graphene inks for flexible electronics

Two-dimensional (2D) materials, such as graphene, are seen as potential candidates for fabricating electronic devices and circuits on flexible substrates. Inks or dispersions of 2D materials can be deposited on flexible substrates by large-scale coating techniques, such as inkjet printing and spray coating. One of the main issues in coating processes is nonuniform deposition of inks, which may lead to large variations of properties across the substrates. Here, we investigate the role of surface morphology on the performance of graphene ink deposited on different paper substrates with specific top coatings. Substrates with good wetting properties result in reproducible thin films and electrical properties with low sheet resistance. The correct choice of surface morphology enables high-performance films without postdeposition annealing or treatment. Scanning terahertz time-domain spectroscopy (THz-TDS) is introduced to evaluate both the uniformity and the local conductivity of graphene inks on paper. A paper-based strain gauge is demonstrated and a variable resistor acts as an on-off switch for operating an LED. Customized surfaces can thus help in unleashing the full potential of ink-based 2D materials.

preprint2020arXiv

Electrostatic detection of Shubnikov-de-Haas oscillations in bilayer graphene by Coulomb resonances in gate-defined quantum dots

A gate-defined quantum dot in bilayer graphene is utilized as a sensitive electrometer for probing the charge density of its environment. Under the influence of a perpendicular magnetic field, the charge carrier density of the channel region next to the quantum dot oscillates due to the formation of Landau levels. This is experimentally observed as oscillations in the gate-voltage positions of the Coulomb resonances of the nearby quantum dot. From the frequency of the oscillations, we extract the charge carrier density in the channel and from the amplitude the shift of the quantum dot potential. We compare these experimental results with an electrostatic simulation of the device and find good agreement.

preprint2020arXiv

Flexible One-Dimensional Metal-Insulator-Graphene Diode

In this work, a novel one-dimensional geometry for metal-insulator-graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1D edge of Al2O3-encapsulated graphene with TiO2 that acts as barrier material. The diodes demonstrate ultra-high current density since the transport in the graphene and through the barrier is in plane. The geometry delivers very low capacitive coupling between the cathode and anode of the diode, which shows frequency response up to 100 GHz and ensures potential high frequency performance up to 2.4 THz. The 1D-MIG diodes are demonstrated to function uniformly and stable under bending conditions down to 6.4 mm bending radius on flexible substrate.

preprint2019arXiv

Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?

It has been argued that current saturation in graphene field-effect transistors (GFETs) is needed to get the highest possible maximum oscillation frequency (fmax). This paper numerically investigates whether velocity saturation can help to get better current saturation and if that correlates with enhanced fmax. For such a purpose, we used a drift-diffusion simulator that includes several factors that influence output conductance, especially at short channel lengths and-or large drain bias: short-channel electrostatics, saturation velocity, graphene-dielectric interface traps, and self-heating effects. As a testbed for our investigation, we analyzed fabricated GFETs with high extrinsin cutoff frequency fT,x (34 GHz) and fmax (37 GHz). Our simulations allow for a microscopic (local) analysis of the channel parameteres such as carrier concentration, drift and saturation velocities. For biases far away from the Dirac voltage, where the channel behaves as unipolar, we confirmed that the higher is the drift velocity, as close as possible to the saturation velocity, the greater fmax is. However, the largest fmax is recorded at biases near the crossover between unipolar and bipolar behavior, where it does not hold that the highest drift velocity maximizes fmax. In fact, the position and magnitude of the largest fmax depend on the complex interplay between the carrier concentration and total velocity which, in turn, are impacted by the self-heating. Importantly, this effect was found to severely limit radio-frequency performance, reducing the maximum fmax from around 60 to 40 GHz.

preprint2019arXiv

Gate-tunable graphene-based Hall sensors on flexible substrates with increased sensitivity

We demonstrate a novel concept for operating graphene-based Hall sensors using an alternating current (AC) modulated gate voltage, which provides three important advantages compared to Hall sensors under static operation: 1) The sensor sensitivity can be doubled by utilizing both n- and p-type conductance. 2) A static magnetic field can be read out at frequencies in the kHz range, where the 1/f noise is lower compared to the static case. 3) The off-set voltage in the Hall signal can be reduced. This significantly increases the signal-to-noise ratio compared to Hall sensors without a gate electrode. A minimal detectable magnetic field Bmin down to 290 nT/sqrt(Hz) and sensitivity up to 0.55 V/VT was found for Hall sensors fabricated on flexible foil. This clearly outperforms state-of-the-art flexible Hall sensors and is comparable to the values obtained by the best rigid III/V semiconductor Hall sensors.