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Martin Otto

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Published work

16 published item(s)

preprint2022arXiv

Direct view of phonon dynamics in atomically thin MoS$_{2}$

Transition metal dichalcogenide monolayers and heterostructures are highly tunable material systems that provide excellent models for physical phenomena at the two-dimensional (2D) limit. While most studies to date have focused on electrons and electron-hole pairs, phonons also play essential roles. Here, we apply ultrafast electron diffraction and diffuse scattering to directly quantify, with time and momentum resolution, electron-phonon coupling (EPC) in monolayer molybdenum disulfide (MoS$_{2}$) and phonon transport from the monolayer to a silicon nitride (Si$_3$N$_4$) substrate. Optically generated hot carriers result in a profoundly anisotropic distribution of phonons in the monolayer on the $\sim$ 5 ps time scale. A quantitative comparison with ab-initio ultrafast dynamics simulations reveals the essential role of dielectric screening in weakening EPC. Thermal transport from the monolayer to the substrate occurs with the phonon system far from equilibrium. While screening in 2D is known to strongly affect equilibrium properties, our findings extend this understanding to the dynamic regime.

preprint2022arXiv

Plasma-enhanced atomic layer deposition of Al$_2$O$_3$ on graphene using monolayer hBN as interfacial layer

The deposition of dielectric materials on graphene is one of the bottlenecks for unlocking the potential of graphene in electronic applications. In this paper we demonstrate the plasma enhanced atomic layer deposition of 10 nm thin high quality Al$_2$O$_3$ on graphene using a monolayer of hBN as protection layer. Raman spectroscopy was performed to analyze possible structural changes of the graphene lattice caused by the plasma deposition. The results show that a monolayer of hBN in combination with an optimized deposition process can effectively protect graphene from damage, while significant damage was observed without an hBN layer. Electrical characterization of double gated graphene field effect devices confirms that the graphene did not degrade during the plasma deposition of Al$_2$O$_3$. The leakage current densities were consistently below 1 nA/mm for electric fields across the insulators of up to 8 MV/cm, with irreversible breakdown happening above. Such breakdown electric fields are typical for Al$_2$O$_3$ and can be seen as an indicator for high quality dielectric films.

preprint2022arXiv

Role of substrate surface morphology on the performance of graphene inks for flexible electronics

Two-dimensional (2D) materials, such as graphene, are seen as potential candidates for fabricating electronic devices and circuits on flexible substrates. Inks or dispersions of 2D materials can be deposited on flexible substrates by large-scale coating techniques, such as inkjet printing and spray coating. One of the main issues in coating processes is nonuniform deposition of inks, which may lead to large variations of properties across the substrates. Here, we investigate the role of surface morphology on the performance of graphene ink deposited on different paper substrates with specific top coatings. Substrates with good wetting properties result in reproducible thin films and electrical properties with low sheet resistance. The correct choice of surface morphology enables high-performance films without postdeposition annealing or treatment. Scanning terahertz time-domain spectroscopy (THz-TDS) is introduced to evaluate both the uniformity and the local conductivity of graphene inks on paper. A paper-based strain gauge is demonstrated and a variable resistor acts as an on-off switch for operating an LED. Customized surfaces can thus help in unleashing the full potential of ink-based 2D materials.

preprint2020arXiv

Electrostatic detection of Shubnikov-de-Haas oscillations in bilayer graphene by Coulomb resonances in gate-defined quantum dots

A gate-defined quantum dot in bilayer graphene is utilized as a sensitive electrometer for probing the charge density of its environment. Under the influence of a perpendicular magnetic field, the charge carrier density of the channel region next to the quantum dot oscillates due to the formation of Landau levels. This is experimentally observed as oscillations in the gate-voltage positions of the Coulomb resonances of the nearby quantum dot. From the frequency of the oscillations, we extract the charge carrier density in the channel and from the amplitude the shift of the quantum dot potential. We compare these experimental results with an electrostatic simulation of the device and find good agreement.

preprint2020arXiv

Flexible One-Dimensional Metal-Insulator-Graphene Diode

In this work, a novel one-dimensional geometry for metal-insulator-graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1D edge of Al2O3-encapsulated graphene with TiO2 that acts as barrier material. The diodes demonstrate ultra-high current density since the transport in the graphene and through the barrier is in plane. The geometry delivers very low capacitive coupling between the cathode and anode of the diode, which shows frequency response up to 100 GHz and ensures potential high frequency performance up to 2.4 THz. The 1D-MIG diodes are demonstrated to function uniformly and stable under bending conditions down to 6.4 mm bending radius on flexible substrate.

preprint2019arXiv

Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?

It has been argued that current saturation in graphene field-effect transistors (GFETs) is needed to get the highest possible maximum oscillation frequency (fmax). This paper numerically investigates whether velocity saturation can help to get better current saturation and if that correlates with enhanced fmax. For such a purpose, we used a drift-diffusion simulator that includes several factors that influence output conductance, especially at short channel lengths and-or large drain bias: short-channel electrostatics, saturation velocity, graphene-dielectric interface traps, and self-heating effects. As a testbed for our investigation, we analyzed fabricated GFETs with high extrinsin cutoff frequency fT,x (34 GHz) and fmax (37 GHz). Our simulations allow for a microscopic (local) analysis of the channel parameteres such as carrier concentration, drift and saturation velocities. For biases far away from the Dirac voltage, where the channel behaves as unipolar, we confirmed that the higher is the drift velocity, as close as possible to the saturation velocity, the greater fmax is. However, the largest fmax is recorded at biases near the crossover between unipolar and bipolar behavior, where it does not hold that the highest drift velocity maximizes fmax. In fact, the position and magnitude of the largest fmax depend on the complex interplay between the carrier concentration and total velocity which, in turn, are impacted by the self-heating. Importantly, this effect was found to severely limit radio-frequency performance, reducing the maximum fmax from around 60 to 40 GHz.

preprint2019arXiv

Gate-tunable graphene-based Hall sensors on flexible substrates with increased sensitivity

We demonstrate a novel concept for operating graphene-based Hall sensors using an alternating current (AC) modulated gate voltage, which provides three important advantages compared to Hall sensors under static operation: 1) The sensor sensitivity can be doubled by utilizing both n- and p-type conductance. 2) A static magnetic field can be read out at frequencies in the kHz range, where the 1/f noise is lower compared to the static case. 3) The off-set voltage in the Hall signal can be reduced. This significantly increases the signal-to-noise ratio compared to Hall sensors without a gate electrode. A minimal detectable magnetic field Bmin down to 290 nT/sqrt(Hz) and sensitivity up to 0.55 V/VT was found for Hall sensors fabricated on flexible foil. This clearly outperforms state-of-the-art flexible Hall sensors and is comparable to the values obtained by the best rigid III/V semiconductor Hall sensors.

preprint2016arXiv

Superharmonic Resonances in a Strongly Coupled Cavity-Atom System

We study a system consisting of a superconducting flux qubit strongly coupled to a microwave cavity. The fundamental cavity mode is externally driven and the response is investigated in the weak nonlinear regime. We find that near the crossing point, at which the resonance frequencies of the cavity mode and qubit coincide, the sign of the Kerr coefficient changes, and consequently the type of nonlinear response changes from softening to hardening. Furthermore, the cavity response exhibits superharmonic resonances when the ratio between the qubit frequency and the cavity fundamental mode frequency is tuned close to an integer value. The nonlinear response is characterized by the method of intermodulation and both signal and idler gains are measured. The experimental results are compared with theoretical predictions and good qualitative agreement is obtained. The superharmonic resonances have potential for applications in quantum amplification and generation of entangled states of light.

preprint2015arXiv

Experimental verification of electro-refractive phase modulation in graphene

Graphene has been considered as a promising material for opto-electronic devices, because of its tunable and wideband optical properties. In this work, we demonstrate electro-refractive phase modulation in graphene at wavelengths from 1530 to 1570 nm. By integrating a gated graphene layer in a silicon-waveguide based Mach-Zehnder interferometer, the key parameters of a phase modulator like change in effective refractive index, insertion loss and absorption change are extracted. These experimentally obtained values are well reproduced by simulations and design guidelines are provided to make graphene devices competitive to contemporary silicon based phase modulators for on-chip applications.

preprint2015arXiv

Pebble Games and Linear Equations

We give a new, simplified and detailed account of the correspondence between levels of the Sherali-Adams relaxation of graph isomorphism and levels of pebble-game equivalence with counting (higher-dimensional Weisfeiler-Lehman colour refinement). The correspondence between basic colour refinement and fractional isomorphism, due to Tinhofer (1986, 1991) and Ramana, Scheinerman and Ullman (1994), is re-interpreted as the base level of Sherali-Adams and generalised to higher levels in this sense by Atserias and Maneva (2012) and Malkin (2014), who prove that the two resulting hierarchies interleave. In carrying this analysis further, we here give (a) a precise characterisation of the level-k Sherali-Adams relaxation in terms of a modified counting pebble game; (b) a variant of the Sherali-Adams levels that precisely match the k-pebble counting game; (c) a proof that the interleaving between these two hierarchies is strict. We also investigate the variation based on boolean arithmetic instead of real/rational arithmetic and obtain analogous correspondences and separations for plain k-pebble equivalence (without counting). Our results are driven by considerably simplified accounts of the underlying combinatorics and linear algebra.

preprint2014arXiv

Decidability Results for the Boundedness Problem

We prove decidability of the boundedness problem for monadic least fixed-point recursion based on positive monadic second-order (MSO) formulae over trees. Given an MSO-formula phi(X,x) that is positive in X, it is decidable whether the fixed-point recursion based on phi is spurious over the class of all trees in the sense that there is some uniform finite bound for the number of iterations phi takes to reach its least fixed point, uniformly across all trees. We also identify the exact complexity of this problem. The proof uses automata-theoretic techniques. This key result extends, by means of model-theoretic interpretations, to show decidability of the boundedness problem for MSO and guarded second-order logic (GSO) over the classes of structures of fixed finite tree-width. Further model-theoretic transfer arguments allow us to derive major known decidability results for boundedness for fragments of first-order logic as well as new ones.

preprint2013arXiv

An analysis method for transmission measurements of superconducting resonators with applications to quantum-regime dielectric-loss measurements

Superconducting resonators provide a convenient way to measure loss tangents of various dielectrics at low temperature. For the purpose of examining the microscopic loss mechanisms in dielectrics, precise measurements of the internal quality factor at different values of energy stored in the resonators are required. Here, we present a consistent method to analyze a LC superconducting resonator coupled to a transmission line. We first derive an approximate expression for the transmission S-parameter $S_{21}$ based on a complete circuit model. In the weak coupling limit, we show that the internal quality factor is reliably determined by fitting the approximate form of $S_{21}$. Since the voltage $V$ of the capacitor of the LC circuit is required to determine the energy stored in the resonator, we next calculate the relation between $V$ and the forward propagating wave voltage $V_{in}^+$. Due to the dependence of the quality factor on voltage, $V$ is not simply proportional to $V_{in}^+$. We find a self-consistent way to determine the relation between $V$ and $V_{in}^+$, which employs only the fitting parameters for $S_{21}$ and a linear scaling factor. We then examine the resonator transmission in the cases of port reflection and impedance mismatch. We find that resonator transmission asymmetry is primarily due to the reflection from discontinuity in transmission lines. We show that our analysis method to extract the internal quality factor is robust in the non-ideal cases above. Finally, we show that the analysis method on LC resonator can be generalize to arbitrary weakly coupled lumped and distributed resonators. The generalization uses a systematic approximation on the response function based on the pole and zero which are the closest to the resonance frequency. This Closest Pole and Zero Method (CPZM) is a valuable tool for analyzing physical measurements of high-Q resonators.

preprint2013arXiv

Characterization of low-temperature microwave loss of thin aluminum oxide formed by plasma oxidation

We report on the characterization of microwave loss of thin aluminum oxide films at low temperatures using superconducting lumped resonators. The oxide films are fabricated using plasma oxidation of aluminum and have a thickness of 5 nm. We measure the dielectric loss versus microwave power for resonators with frequencies in the GHz range at temperatures from 54 to 303 mK. The power and temperature dependence of the loss is consistent with the tunneling two-level system theory. These results are relevant to understanding decoherence in superconducting quantum devices. The obtained oxide films are thin and robust, making them suitable for capacitors in compact microwave resonators.

preprint2012arXiv

Queries with Guarded Negation (full version)

A well-established and fundamental insight in database theory is that negation (also known as complementation) tends to make queries difficult to process and difficult to reason about. Many basic problems are decidable and admit practical algorithms in the case of unions of conjunctive queries, but become difficult or even undecidable when queries are allowed to contain negation. Inspired by recent results in finite model theory, we consider a restricted form of negation, guarded negation. We introduce a fragment of SQL, called GN-SQL, as well as a fragment of Datalog with stratified negation, called GN-Datalog, that allow only guarded negation, and we show that these query languages are computationally well behaved, in terms of testing query containment, query evaluation, open-world query answering, and boundedness. GN-SQL and GN-Datalog subsume a number of well known query languages and constraint languages, such as unions of conjunctive queries, monadic Datalog, and frontier-guarded tgds. In addition, an analysis of standard benchmark workloads shows that most usage of negation in SQL in practice is guarded negation.

preprint2011arXiv

High On/Off Ratios in Bilayer Graphene Field Effect Transistors Realized by Surface Dopants

The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic and sensor applications. So far the operation of bilayer graphene based field effect transistors requires two individual gates to vary the channel's conductance and to create a band gap. In this paper we report on a method to increase the on/off ratio in single gated bilayer graphene field effect transistors by adsorbate doping. The adsorbate dopants on the upper side of the graphene establish a displacement field perpendicular to the graphene surface breaking the inversion symmetry of the two graphene layers. Low temperature measurements indicate, that the increased on/off ratio is caused by the opening of a mobility gap. Beside field effect transistors the presented approach can also be employed for other bilayer graphene based devices like photodetectors for THz to infrared radiation, chemical sensors and in more sophisticated structures such as antidot- or superlattices where an artificial potential landscape has to be created.

preprint2010arXiv

Electrical observation of a tunable band gap in bilayer graphene nanoribbons at room temperature

We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes. By analyzing the dependence of the resistance at the charge neutrality point as a function of the electric field applied perpendicular to the graphene surface, we show that a band gap in the density of states opens, reaching an effective value of ~sim50 meV. This demonstrates the potential of bilayer graphene as FET channel material in a conventional CMOS environment.