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Zhensong Ren

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3 publications

preprint2014arXiv

Anomalous CDW ground state in Cu2_2Se: a wave-like fluctuation of dc\it{dc} I-V curve near 50 K

A charge density wave (CDW) ground state is observed in polycrystalline Cu2_2Se below 125 K, which corresponds to an energy gap of 40.9 meV and an electron-phonon coupling constant of 0.6. Due to the polycrystalline structure, the Peierls transition process has been expanded to a wide temperature range from 90 to 160 K. The Hall carrier concentration shows a continuous decrease from 2.1×\times1020^{20} to 1.6×\times1020^{20} cm−3^{-3} in the temperature range from 160 K to 80 K, while almost unchanged above 160 K and below 90 K. After entering the CDW ground state, a wave-like fluctuation was observed in the I-V curve near 50 K, which exhibits as a periodic negative differential resistivity in an applied electric field due to the current. We also investigated the doping effect of Zn, Ni, and Te on the CDW ground state. Both Zn and Ni doped Cu2_2Se show a CDW character with increased energy gap and electron-phonon coupling constant, but no notable Peierls transition was observed in Te doped Cu2_2Se. Similar wave-like I-V curve was also seen in Cu1.98_{1.98}Zn0.02_{0.02}Se near 40 K. The regular fluctuation in dc\it{dc} I-V curve was not magnetic field sensitive, but temperature and sample size sensitive.

preprint2014arXiv

Carrier localization and electronic phase separation in a doped spin-orbit driven Mott phase in Sr3(Ir1-xRux)2O7

Interest in many strongly spin-orbit coupled 5d-transition metal oxide insulators stems from mapping their electronic structures to a J=1/2 Mott phase. One of the hopes is to establish their Mott parent states and explore these systems' potential of realizing novel electronic states upon carrier doping. However, once doped, little is understood regarding the role of their reduced Coulomb interaction U relative to their strongly correlated 3d-electron cousins. Here we show that, upon hole-doping a candidate J=1/2 Mott insulator, carriers remain localized within a nanoscale phase separated ground state. A percolative metal-insulator transition occurs with interplay between localized and itinerant regions, stabilizing an antiferromagnetic metallic phase beyond the critical region. Our results demonstrate a surprising parallel between doped 5d- and 3d-electron Mott systems and suggest either through the near degeneracy of nearby electronic phases or direct carrier localization that U is essential to the carrier response of this doped spin-orbit Mott insulator.

preprint2013arXiv

Neutron scattering study of correlated phase behavior in Sr2IrO4

Neutron diffraction measurements are presented exploring the magnetic and structural phase behaviors of the candidate Jeff=1/2_{eff}=1/2 Mott insulating iridate Sr2_2IrO4_4. Comparisons are drawn between the correlated magnetism in this single layer system and its bilayer analog Sr3_3Ir2_2O7_7 where both materials exhibit magnetic domains originating from crystallographic twinning and comparable moment sizes. Weakly temperature dependent superlattice peaks violating the reported tetragonal space group of Sr2_2IrO4_4 are observed supporting the notion of a lower structural symmetry arising from a high temperature lattice distortion, and we use this to argue that moments orient along a unique in-plane axis demonstrating an orthorhombic symmetry in the resulting spin structure. Our results demonstrate that the correlated spin order and structural phase behaviors in both single and bilayer Srn+1_{n+1}Irn_{n}O3n+1_{3n+1} systems are remarkably similar and suggest comparable correlation strengths in each system.

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